User Guide EVAL-1ED020I12F2-DB
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v1.0
2021-06-21
EVAL-1ED020I12F2-DB user guide
Isolated driver daughter board to evaluate 1200 V CoolSiC™ MOSFET
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2.2
Description of the functional blocks
The description of the functional blocks of the daughterboard EVAL-1ED020I12F2-DB refer to Figure 5. All
connections are shown only roughly, the detailed circuit is shown in Figure 8.
In principle, the board can be separated into two parts, the primary and the secondary side. The primary side
describes the low voltage area, the secondary the high-voltage area, which directly controls the power switch.
No components or electrical lines should be placed in the isolation barrier, as otherwise the insulation between
input and output (primary and secondary side) cannot be guaranteed.
Furthermore, two gate driver ICs, 1ED020I12-F2, which can generally be operated separately, are positioned on
the board. In connection with the motherboard, this two drivers working in a half-bridge configuration, so that
one IC works as the high-side driver and the other IC as the low-side driver.
The primary side comprises the connector X202 as well as all necessary lines and passive components which
are necessary for the safe operation of the gate drivers. Connector X202 delivers all the necessary control
signals (IN+, IN-, /FLT, RDY and /RST) as well as the electrical power (VCC1 and GND1) to the primary side of
both gate driver ICs. More detailed information can be found in Chapter 4.4, Table 5.
The connectors X200 and X201 on the secondary side are used to supply the two drivers with the secondary
power supply which is required for the gate voltages and are the connection to the power switches. Each gate
driver has its own power supply, they are galvanically isolated to each other. More detailed information about
the connectors X200 and X201 can be found in Chapter 4.4, Table 6 and Table 7.
Via
R
DESAT
;
D
DSAT
and X200-10/X201-10, the DESAT inputs of the gate drivers are connected to the drain when used
with of SiC MOSFET or MOSFET, or to the Collector when used with IGBT. This DESAT function protects the
power switches against over current situations.
The outputs “OUT” of the gate drivers are connected via
R
Gate
and X200-1,2/X201-1,2 to the gate of the
corresponding power switch and delivers the gate voltage to drive the power switches.
Outputs “CLAMP” are connected via zero ohm resistors (0 Ω) to the gate resistors. The reason is, if clamp
function is not required, resistors just can be removed.
2.2.1
Basic operation
Please note that the entire evaluation platform was designed for double-pulse tests and short-circuit tests only.
The evaluation platform is unsuitable for long-term tests, as the power switches are not soldered. Figure 7
presents a possible configuration of this combination of mother- and daughterboard.