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Demonstration System EPC9067
Table 2: Bill of Materials - Amplifier Board
Item
Qty Reference
Part Description
Manufacturer/Part Number
1
1
C40
Capacitors, Ceramic, 4.7 µF, 10 V, ±20%, X5R
Samsung, CL05A475MP5NRNC
2
3
C4, C5, C6
Capacitors, Ceramic, 1.0 µF, 100 V, ±10%, X7S
TDK, C2012X7S2A105K125AB
3
3
C95, C96, C97
Capacitors, Ceramic, 1.0 µF, 25 V, ±10%, X5R
Murata, GRM188R61E105KA12D
4
2
C71, C72
Capacitors, Ceramic, 100 nF, 25 V, ±10%, X7R
TDK, C1005X7R1E104K050BB
5
2
C41, C44
Capacitors, Ceramic, 100 nF, 16 V, ±10%, X7R
Murata, GRM155R71C104KA88D
6
1
C45
Capacitors, Ceramic, 22 nF, 25 V, ±10%, X7R
TDK, C1005X7R1E223K050BB
7
3
C1, C2, C3
Capacitors, Ceramic, 10 nF, 100 V, ±20%, X7S
TDK, C1005X7S2A103M050BB
8
2
C42, C43
Capacitors, Ceramic, 22 pF, 50 V, ±5%, NPO
TDK, C1005C0G1H220J050BA
9
1
R46
Resistors, 27 KΩ, ±1%, 1/10 W
Panasonic, ERJ-2RKF2702X
10
1
R70
Resistors, 10.0 KΩ, ±1%, 1/10 W
Panasonic, ERJ-6ENF1002V
11
1
R74
Resistors, 191 Ω, ±1%, 1/10 W
Panasonic, ERJ-2RKF1910X
12
1
R75
Resistors, 56 Ω, ±1%, 1/10 W
Panasonic, ERJ-2RKF56R0X
13
1
R45
Resistors, 20 Ω, ±1%, 1/16 W
Stackpole, RMCF0402FT20R0
14
1
R44
Resistors, 4.7 Ω, ±1%, ±/16 W
Yageo, RC0402FR-074R7L
15
3
D45, D74, D75
Diodes, Schottky Diode, 30 V, VF=370 mV @ 1 mA, 30 mA
Diodes Inc, SDM03U40-7
16
1
D40
Diodes, Schottky, 100 V, 0.2 A, VF=1 V @ 200 mA
ST Microelectronics, BAT41KFILM
17
1
D41
Diodes, Zener, 5.1 V, 150 mW ±5%
Bourns Inc., CD0603-Z5V1
18
1
Q44
eGaN® FET, 100 V, 500 mA, R
DS(on)
=2.1 Ω @ 50 mA, 5 V
EPC, EPC2038
19
2
Q1, Q2
eGaN® FET, 65 V, 4.1A, R
DS(on)
=138 mΩ @ 500 mA, 5 V
EPC, EPC8009
20
1
U95
IC's, 5 V LDO, 250 mA, up to 16V
IN
, V
dropout
=0.33 V @ 250 mA
Microchip, MCP1703T-5002E/MC
21
1
U40
IC's, Gate driver, 5.2 VDC, 1.2 A, 4.5 V to 5.5 V
Texas Instruments, LM5113TME/NOPB
22
1
U72
IC's, Logic 2 NAND Gate, 1.65 V to 5.5 V, ± 24 mA
Fairchild, NC7SZ00L6X
23
1
U71
IC's, 2 Input AND Gate, Tiny Logic, 1.65 V to 5.5 V, ± 32 mA
Fairchild, NC7SZ08L6X
24
4
TP1, TP2, TP3, TP4
Test Point, Test Point Subminiature
Keystone, 5015
25
0.19
J70, J90, GP1 (See Note 1)
Headers, Male Vertical, 36 Pin. 230" Contact Height, .1" Center Pitch
FCI, 68001-236HLF
26
4
J1, J3, J4, J5
Headers, 2 Rows by 2 Pins .1" Male Vertical, .1" Center Pitch
TE Connectivity, 5-146256-2
Optional Components
Item
Qty Reference
Part Description
Manufacturer/Part Number
1
1
C7
Capacitors, DNP, Ceramic, 1.0 µF, 100 V, ±10%, X7S
TDK, C2012X7S2A105K125AB
2
1
C46
Capacitor, DNP, Ceramic, 100 nF, 16 V, ±10%, X7R
Murata, GRM155R71C104KA88D
3
3
R71, R72, R73
Resistor, DNP, 0 Ω, 1/10 W, Jumper
Panasonic, ERJ-3GEY0R00V
4
2
P74, P75
Potentiometer, DNP, Multi-turn Potentiometer, 1 kΩ, ±10%, 1/4 W, 12 Turn
Top Adjustment Small
Murata, PV37W102C01B00
5
1
Lbuck
Inductor, DNP, 10 μH, ±20%, 3.5 A, 33 mΩ, Resonance=40 MHz, Frequency
Tested=100 KHz
Wϋrth, 744314101
6
1
Lzvs
Inductor, DNP, 500 nH, , Q=180, 50 MHz, DCR=16.5 mΩ, I
RMS
=4.3 A
Coilcraft, 2929SQ-501JEB
7
1
D44
Diodes, DNP, Schottky Diode, 30 V, VF=370 mV @ 1 mA, 30 mA
Diodes Inc, SDM03U40-7
8
1
J2
Connector, DNP, RP-SMA Plug, 50 Ω
Linx, CONREVSMA013.062
9
1
HS1
Hardware, DNP, W= (0.590") 15 mm, by L= (0.590") 15 mm, H=(0.374")
9.5 mm, 26.2°C/W @ 200 LFM
Advanced Thermal Solutions, ATS-54150D-C2-R0
Note 1 (36 pin Header to be cut as follows) J70 cut 4 pins used, J90 cut 2 pins used, GP1 cut 1 pin used
THERMAL CONSIDERATIONS
The EPC9067 development board showcases the EPC8009 eGaN FET.
Although the electrical performance surpasses that for traditional
Si devices, their relatively smaller size does magnify the thermal
management requirements. The EPC9067 is intended for bench
evaluation with low ambient temperature and convection cooling.
The addition of heat-sinking and forced air cooling can significantly
increase the current rating of these devices, but care must be taken to
not exceed the absolute maximum die temperature of 125°C.
NOTE. The EPC9067 development board does not have any current or thermal
protection on board.