Hitachi 32LD8600, Service Manual

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20
TFT TV Service Manual
55 30 - 29 22 NC LV Not connected
56 29 25 28 21 DACM_L OUT LV Loudspeaker out, left
57 28 24 27 20 DACM_R OUT LV Loudspeaker out, right
58 27 23 26 19 VREF2 OBL Reference ground 2
59 26 22 25 18 DACA_L OUT LV Headphone out, left
60 25 21 24 17 DACA_R OUT LV Headphone out, right
- - - 23 - NC LV Not connected
- - - 22 - NC LV Not connected
61 24 20 21 16 RESETQ IN OBL Power-on-reset
62 23 - 20 15 NC LV Not connected
63 22 - 19 14 NC LV Not connected
64 21 19 18 13 NC LV Not connected
65 20 18 17 12 I2S_DA_IN2 IN LV I
2
S2-data input
66 19 17 16 11 DVSS OBL Digital ground
- - - 15 - DVSS OBL Digital ground
- - - 14 - DVSS OBL Digital ground
67 18 16 13 10 DVSUP OBL Digital power supply 5V
- - - 12 - DVSUP OBL Digital power supply 5V
- - - 11 - DVSUP OBL Digital power supply 5V
68 17 15 10 9 ADR_CL OUT LV ADR clock
11.17. M29W040B
11.17.1. Description
The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and
reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On
power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or
EPROM. The M29W040B is fully backward compatible with the M29W040.The memory is divided into
blocks that can be erased independently so it is possible to preserve valid data while old data is erased.
Each block can be protected independently to prevent accidental Program or Erase commands from
modifying the memory. Program and Erase commands are writ-ten to the Command Interface of the
memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the
memory by taking care of all of the special operations that are required to update the memory contents.
The end of a program or erase operation can be detected and any error conditions identified. The
command set required to control the memory is consistent with JEDEC standards. Chip Enable, Output
Enable and Write Enable signals control the bus operation of the memory. They allow simple
connection to most microprocessors, often without additional logic.
11.17.2. Features
•
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
• ACCESS TIME: 55ns
• PROGRAMMING TIME
- 10μs per Byte typical8
•
UNIFORM 64 Kbytes MEMORY BLOCKS
• PROGRAM/ERASE CONTROLLER
- Embedded Byte Program algorithm
- Embedded Multi-Block/Chip Erase algorithm
- Status Register Polling and Toggle Bits
• ERASE SUSPEND and RESUME MODES
- Read and Program another Block during Erase Suspend
•
UNLOCK BYPASS PROGRAM COMMAND
- Faster Production/Batch Programming
• LOW POWER CONSUMPTION
- Standby and Automatic Standby
•
100,000 PROGRAM/ERASE CYCLES per BLOCK
•
20 YEARS DATA RETENTION
- Defectivity below 1 ppm/year
• ELECTRONIC SIGNATURE
- Manufacturer Code: 20h
- Device Code: E3h