Harman Harman/kardon AVR 161, Service Manual

Page: 81 / 178

〈 Transistor 〉
ＲＴ１Ｎ１４４Ｘ
SERIES
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
ISAHAYA ELECTRONICS CORPORATION
MAXIMUM RATING (Ta=25
℃
)
RATING
SYMBOL PARAMETER
RT1N144T2 RT1N144U RT1N144M RT1N144C RT1N144S
UNIT
Ｖ
ＣＢＯ
Collector to Base voltage 50 V
Ｖ
ＥＢＯ
Emitter to Base voltage 6 V
Ｖ
ＣＥＯ
Collector to Emitter voltage 50 V
Ｉ
Ｃ
Collector current 100 mA
Ｉ
ＣＭ
Peak Collector current 200 mA
Ｐ
Ｃ
Collector dissipation(Ta=25 ℃ ) 125 （ ※） 150 200 450 mW
Ｔｊ
Junction temperature +125 +150
℃
Ｔｓｔ ｇ Storage temperature -55 〜 +125 -55 〜 +150 ℃
（ ※）
package mounted on 9mm
×
19mm
×
1mm glass-epoxy substrate.
ELECTRICAL CHARACTERISTICS (Ta=25
℃
)
LIMIT
SYMBOL PARAMETER TEST CONDITION
MIN TYP MAX
UNIT
Ｖ
（ ＢＲ） ＣＥＯ
C to E break down voltage I
C
=100 μ A ， R
BE
= ∞ 50 V
Ｉ
ＣＢＯ
Collector cut off current V
CB
=50V
，
I
E
=0 0.1
μ
A
ｈ
ＦＥ
DC forward current gain V
CE
=5V
，
I
C
=5mA 50
−
Ｖ
ＣＥ（ ｓａｔ ）
C to E saturation voltage I
C
=10mA ， I
B
=0.5mA 0.1 0.3 V
Ｖ
Ｉ （ ＯＮ）
Input on voltage V
CE
=0.2V ， I
C
=5mA 1.0 1.8 V
Ｖ
Ｉ （ ＯＦＦ）
Input off voltage V
CE
=5V
，
I
C
=100
μ
A 0.4 0.7 V
Ｒ
１
Input resistance 7.0 10 13 k Ω
Ｒ
２
／Ｒ
１
Resistance ratio 4.2 4.7 5.1
ｆ
Ｔ
Gain band width product V
CE
=6V ， I
E
=-10mA 200 MHz
COLLECTOR DISSIPATION
VS AMBIENT TEMPERTURE
0
100
200
300
400
500
600
0 25 50 75 100 125 150 175
AMBIENT TEMPERTURE Ta ( ℃ )
COLLECTOR DISSIPATION Pc (mW)
RT1N144T2
RT1N144U
RT1N144C
RT1N144M
RT1N144S
Harman Kardon AVR 161 Service Manual
Page 81 of 178