Harman Kardon dmc230, Service Manual, Page: 54 / 110

HN1K05FU
2007-11-01 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K05FU
For Portable Devices
High Speed Switching Applications
Interface
Applications
• High input impedance and extremely low drive current.
• V
th
is low and it is possible to drive directly at low-voltage CMOS.
: V
th
= 0.5 to 1.0 V
• Suitable for high-density mounting because of a compact package.
Absolute Maximum Ratings (Ta
=
25°C)
(Q1, Q2 common)
Characteristics Symbol Rating Unit
Drain-source voltage V
DS
20 V
Gate-source voltage V
GSS
10 V
DC drain current I
D
100 mA
Drain power dissipation P
D
(Note 1) 200 mW
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−
55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: TOTAL rating
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-2J1C
Weight: 6.8 mg
harman/kardon DMC250/230 Service Manual
Page 54 of 110