Harman Kardon dmc230, Service Manual, Page: 53 / 110

HN1K02FU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K02FU
High Speed Switching Applications
Analog Switch Applications
z
2.5 V gate drive.
z
Low threshold voltage: V
th
= 0.5V~1.5V
z
High speed
z
Enhancement-mode
z
Small package
Absolute Maximum Ratings
(Ta = 25
°
C)
(Q1, Q2 Common)
Characteristic Symbol Rating Unit
Drain-Source voltage V
DS
20 V
Gate-Source voltage V
GSS
10 V
DC Drain current I
D
50 mA
Drain power dissipation P
D
* 200 mW
Channel temperature T
ch
150
°
C
Storage temperature range T
stg
− 55~150
°
C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
JEDEC
―
EIAJ ―
TOSHIBA
2-2J1C
Weight: 6.8mg
Unit in mm
harman/kardon DMC250/230 Service Manual
Page 53 of 110