GS-EVB-HB-66508B-RN Technical Manual
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GS-EVB-HB-66508B-RN Rev. 210118 © 2021 GaN Systems Inc.
www.gansystems.com 5
Please refer to the Evaluation Board/Kit Important Notice on page 26
GaN E-HEMTs:
•
This daughter board includes two GaN Systems E-HEMT GS66508B (650V/30A, 50m
Ω
) in a
GaNPx™ B type package. The large S pad serves as source connection and thermal pad. The pin
4 is the kelvin source connection for gate drive return.
Figure 4 Package outline of GS66508B
Gate driver circuit:
•
Renesas RAA226110 low-side gate driver is chosen for this design. This driver provides 5.8V gate
drive with 3.8V UVLO. It supports the 5.8V turn on and -3V/0V turn off. It has separated source
and sink drive outputs which eliminates the need for additional diode. OCP is also integrated in
the driver.
•
RAA226110 provides configurable source current(0.3A/0.75A/2A) to adjust the slew rate of
GS66508B without gate resistor to minimize the gate loop. The turn off speed can be directly
controlled by the gate resistor Rg_off (R19/R20).
Figure 5 Gate driver circuit
Gate drive power supply:
•
5V-9V isolated DC/DC converters are used for gate drive. The RAA226110 accpets 4.5V to 18V
VDD input voltage. DC/DC conterter 9V output is directly connected to RAA226110.
