©2006 Fairchild Semiconductor Corporation
2
www.fairchildsemi.com
FSAM50SM60A Rev. C4
FSAM50SM60A Moti
on
SPM®
2 Series
Integrated Power Functions
• 600V - 50 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out (UVLO) Protection
Note) Available bootstrap circuit example is given in Figures 13 and 14.
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out (UVLO) Protection
• Temperature Monitoring: system temperature monitoring using built-in thermistor
Note) Available temperature monitoring circuit is given in Figure 14.
• Fault signaling: corresponding to a SC fault (low-side IGBTs) and UV fault (low-side control supply)
• Input interface: active-LOW Interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
Figure 2. Top View
Case Temperature(T
C
)
Detecting Point
(26)N
U
(22)V
B(W)
(1)V
CC(L)
(2)COM
(L)
(3)IN
(UL)
(4)IN
(VL)
(5)IN
(WL)
(7)V
FO
(27)N
V
(28)N
W
(32)P
(20)IN
(WH)
(23)V
S(W)
(29)U
(30)V
(31)W
(8)C
FOD
(9)C
SC
(25)R
TH
(24)V
TH
(21)V
CC(WH)
(18)V
B(V)
(19)V
S(V)
(15)IN
V(H)
(17)V
CC(VH)
(16)COM
(H)
(13)V
B(U)
(14)V
S(U)
(11)IN
(UH)
(12)V
CC(UH)
(10)R
SC
(6)COM
(L)
DBC Substrate
Case Temperature(T
C
)
Detecting Point
(26)N
U
(22)V
B(W)
(1)V
CC(L)
(2)COM
(L)
(3)IN
(UL)
(4)IN
(VL)
(5)IN
(WL)
(7)V
FO
(27)N
V
(28)N
W
(32)P
(20)IN
(WH)
(23)V
S(W)
(29)U
(30)V
(31)W
(8)C
FOD
(9)C
SC
(25)R
TH
(24)V
TH
(21)V
CC(WH)
(18)V
B(V)
(19)V
S(V)
(15)IN
V(H)
(17)V
CC(VH)
(16)COM
(H)
(13)V
B(U)
(14)V
S(U)
(11)IN
(UH)
(12)V
CC(UH)
(10)R
SC
(6)COM
(L)
DBC Substrate
