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EN109-1633750-40 IFU
13
Specifications
Technical data
Electrical info
Mains voltage
100 - 240 Volt
Frequency
50/60 Hz
Max. power output
20 VA
Dimensions
Main device (length x width x height)
22 x 16 x 14 cm
Weight unit
1.6 kilogram
Technical specifications
Laser Probe 100 mW Pulsed (LP100P)
Max. power output
100 mW ± 20%
Type
(GaAs) Pulsed
Wavelength
Near infrared Laser diode 905 nm ± 10 nm
Pulse frequency
1
–
10 kHz in steps of 1kHz
Beam divergence
184 x 92 mrad
Pulse duration
100 ns
Maximum laser output
100 W Peak ± 20%
Nominal ocular hazard distance
0.48 m
Laser Probe 500 mW CW (LP500C)
Max. power output
500 mW ± 20%
Type
(GaAlAs) Continuous
Wavelength
Near infrared Laser diode 808 nm ± 5 nm
Duty cycle
10
–
100 % in steps of 10 %
Beam divergence
225 x 77 mrad
Pulse duration
Continuous
Maximum laser output
500 mW ± 20%
Nominal ocular hazard distance
1.33 m
Laser Probe Cluster 4x100mW CW
(CP4X100C)
Max. power output
4 x 100 mW ± 20%
Type
(GaAlAs) Continuous
Wavelength
Near infrared Laser diode 808 nm ±5 nm
Duty cycle
10
–
100% in steps of 10 %
Beam divergence
489 x 140 mrad
Pulse duration
Continuous
Maximum laser output
100 mW ± 20%
Nominal ocular hazard distance
1 m
Laser Probe Cluster 4x400 mW CW
(CP4X400C)
Max. power output
4 x 400 mW ± 20%
Maximum continuous output
(GaAlAs) Continuous
Wavelength
Near infrared Laser diode 808 nm ± 5 nm
Duty Cycle
10
–
100 % in steps of 10 %
