DTK PRM-0075I, User Manual

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Award BIOS Setup Guide
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DRAM Read Burst (EDO/FP): This sets the timing for burst mode reads from DRAM:
x444/x444 Read EDO and FP DRAM Timings are x-4-4-4.
x333/x444 Read EDO DRAM Timings are x-3-3-3, and FP
DRAM’s are x-4-4-4.
x222/x333 Read EDO DRAM Timings are x-2-2-2, and FP
DRAM’s are x-3-3-3.
DRAM Write Burst Timing: This sets the timings for burst write to DRAM:
x444 Write DRAM timings are x-4-4-4
x333 Write DRAM timings are x-3-3-3
x222 Write DRAM timings are x-2-2-2
Fast EDO Lead Off: Select Enabled only for EDO DRAMs in either a synchronous cache or a
cacheless system. It causes a 1-HCCK pull-in all read leadoff latencies for EDO DRAMs. Select
Disabled if any of the DRAM rows are populated with FPM DRAMs.
SDRAM (CAS Lat/RAS-to-CAS): It is used to set the CAS# latency and the RAS to CAS delay
for all SDRAM cycles.
SDRAM (CAS Lat/RAS-to-CAS) CAS# latency RAS to CAS delay
3/3 3 Clock 3 Clock
2/2 2 Clock 2 Clock
3/2 3 Clock 2 Clock
SDRAM Speculative Read: If Enabled, the CPU will issue predict commands to access the
DRAM. If a miss occurs, the CPU will cancel this command. Some operating systems under
certain situations have a problem utilizing this feature so it is normally Disabled.
System BIOS Cacheable: Selecting Enabled allows caching of the system BIOS ROM at
F0000h-FFFFFh, resulting in better system performance. However, if any program writes to this
memory area, a system error may result.
Video BIOS Cacheable: Selecting Enabled allows caching of the video BIOS ROM at C0000h
to C7FFFh, resulting in better video performance. However, if any program writes to this
memory area, a system error may result.