3. TECHNICAL SPECIFICATIONS
3.1. Specifications
3.1.1. Quantum Efficiency
Table 3.1:
Quantum Efficiency
Sensor thickness
450 µm
1000 µm
Quantum efficiency at
5
.
4 keV (Cr)
94 %
> 80 %
8
.
0 keV (Cu)
98 %
96 %
17
.
5 keV (Mo)
47 %
76 %
3.1.2. Detector
Table 3.2:
Technical Specifications
Number of modules (W x H)
5 x 12 = 60
Sensor
Reverse-biased diode array
Sensor material
Silicon (Si)
Pixel size (W x H)
172 µm x 172 µm
Module size (W x H)
83
.
8 mm x 33
.
5 mm
Pixel array format (W x H)
2463 pixels x 2527 pixels = 6 224 001 pixels
Intermodule gap [pixel]
hor. 7 pixels, vert. 17 pixels
Image bit depth
32 bit
Readout bit depth
20 bit
Counter overflow state
1 048 575
Maximum count rate
1
×
10
7
photons
/
s
/
pixel
Energy range
5 keV to 36 keV
Adjustable threshold range
2
.
7 keV to 18 keV
Energy resolution of threshold
500 eV
Number of thresholds
1
Maximum frame rate
25 Hz
Information
#1
When using the external trigger or external enable
mode, the detector will not acquire an image if the ef-
fective frame rate is above 25 Hz.
1
The sensor thickness of your actual system can be found in the order confirmation and in the file header of recorded images
2
Low-energy calibrations offering lower minimal thresholds are optionally available. Consult DECTRIS The energy calibration of your actual system can
be found in the order confirmation and in the factory acceptance test sheet.
PILATUS3 S 6M Technical Specifications v1.1.1
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