Cypress Semiconductor MoBL CY62157E, Specification Sheet

Page: 4 / 12

CY62157E MoBL
®
Document #: 38-05695 Rev. *C Page 4 of 12
Thermal Resistance
[9]
Parameter Description Test Conditions TSOP II VFBGA Unit
Θ
JA
Thermal Resistance
(Junction to Ambient) Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board 77 72 °C/W
Θ
JC
Thermal Resistance
(Junction to Case) 13 8.86 °C/W
AC Test Loads and Waveforms
Parameters Values Unit
R1 1800
Ω
R2 990
Ω
R
TH
639
Ω
V
TH
1.77 V
Data Retention Characteristics
(Over the Operating Range)
Parameter Description Conditions Min Typ
[4]
Max Unit
V
DR
V
CC
for Data Retention 2 V
I
CCDR
Data Retention Current V
CC
=2V, CE
1
> V
CC
– 0.2V,
CE
2
< 0.2V, V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
Industrial 8
µ
A
Automotive 30
t
CDR
[9]
Chip Deselect to Data
Retention Time 0 ns
t
R
[10]
Operation Recovery Time t
RC
ns
Data Retention Waveform
[11]
Notes:
10. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min)
> 100
µ
s or stable at V
CC(min)
> 100
µ
s.
11. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.
3V
V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT V
Equivalent to: THEVENIN EQUIVALENT
ALL INPUT PULSES
R
TH
R1
V
CC(min)
t
CDR
V
DR
> 2 V
DATA RETENTION MODE
t
R
V
CC
CE
1
or
BHE.BLE
CE
2
V
CC(min)
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