Cypress Semiconductor MoBL CY62157E, Specification Sheet

Page: 3 / 12

CY62157E MoBL
®
Document #: 38-05695 Rev. *C Page 3 of 12
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied ........................................... –55°C to + 125°C
Supply Voltage to Ground
Potential .......................................................... –0.5V to 6.0V
DC Voltage Applied to Outputs
in High Z State
[6, 7]
........................................... –0.5V to 6.0V
DC Input Voltage
[6, 7]
........................................–0.5V to 6.0V
Output Current into Outputs (LOW) ............................ 20 mA
Static Discharge Voltage .......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ................................................... > 200 mA
Operating Range
Device Range
Ambient
Temperature V
CC
[8]
CY62157E Industrial –40°C to +85°C 4.5V to 5.5V
Automotive –40°C to +125°C
Electrical Characteristics (
Over the Operating Range)
Parameter Description Test Conditions
45 ns (Industrial) 55 ns (Automotive)
Unit Min Typ
[4]
Max Min Typ
[4]
Max
V
OH
Output HIGH
Voltage I
OH
= –1 mA V
CC
= 4.5V 2.4 2.4 V
V
OL
Output LOW
Voltage I
OL
= 2.1 mA V
CC
= 4.5V 0.4 0.4 V
V
IH
Input HIGH
Voltage V
CC
= 4.5V to 5.5V 2.2 V
CC
+ 0.5 2.2 V
CC
+ 0.5 V
V
IL
Input LOW
Voltage V
CC
= 4.5V to 5.5V –0.5 0.8 –0.5 0.8 V
I
IX
Input Leakage
Current GND < V
I
< V
CC
–1 +1 –1 +1
µ
A
I
OZ
Output Leakage
Current GND < V
O
< V
CC
, Output Disabled –1 +1 –1 +1
µ
A
I
CC
V
CC
Operating
Supply
Current
f = f
max
= 1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
18 25 18 35
mA
f = 1 MHz 1.8 3 1.8 4
I
SB1
Automatic CE
Power-Down
Current —
CMOS Inputs
CE
1
> V
CC
−
0.2V, CE
2
< 0.2V,
V
IN
> V
CC
– 0.2V, V
IN
< 0.2V,
f = f
max
(Address and Data Only),
f = 0 (OE, BHE, BLE and WE),
V
CC
= 3.60V
2 8 2 30
µ
A
I
SB2
Automatic CE
Power-Down
Current —
CMOS Inputs
CE
1
> V
CC
– 0.2V or CE
2
< 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= 3.60V
2 8 2 30
µ
A
Capacitance
[9]
Parameter Description Test Conditions Max Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz, V
CC
= V
CC(typ)
10 pF
C
OUT
Output Capacitance 10 pF
Notes:
6. V
IL(min)
= –2.0V for pulse durations less than 20 ns for I < 30 mA.
7. V
IH(max)
= V
CC
+ 0.75V for pulse durations less than 20 ns.
8. Full device AC operation assumes a 100
µ
s ramp time from 0 to V
CC
(min) and 200
µ
s wait time after V
CC
stabilization.
9. Tested initially and after any design or process changes that may affect these parameters.
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