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Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document #: 001-13194 Rev. *A

 Revised March 26, 2007

CY62138F MoBL

®

2-Mbit (256K x 8) Static RAM

Features

• High speed: 45 ns
• Wide voltage range: 4.5 V – 5.5 V
• Pin compatible with CY62138V
• Ultra low standby power

— Typical standby current:

 

1

 

µ

A

— Maximum standby current:

 

µ

A

• Ultra low active power

— Typical active current: 1.6 mA @ f = 1 MHz

• Easy memory expansion with CE

1

, CE

2,

 and OE features

• Automatic power down when deselected
• CMOS for optimum speed and power
• Available in Pb-free 32-pin SOIC and 32-pin TSOP II 

packages

Functional Description 

[1]

The CY62138F is a high performance CMOS static RAM

organized as 256K words by 8 bits. This device features

advanced circuit design to provide ultra low active current.

This is ideal for providing More Battery Life™ (MoBL

®

) in

portable applications such as cellular telephones. The device

also has an automatic power down feature that significantly

reduces power consumption when addresses are not toggling.

Placing the device into standby mode reduces power

consumption by more than 99% when deselected (CE

HIGH

or CE

2

 LOW). 

To write to the device, take Chip Enable (CE

LOW and CE

2

HIGH) and Write Enable (WE) inputs LOW. Data on the eight

IO pins (IO

0

 through IO

7

) is then written into the location

specified on the address pins (A

0

 through A

17

).

To read from the device, take Chip Enable (CE

LOW and CE

2

HIGH) and output enable (OE) LOW while forcing Write

Enable (WE) HIGH. Under these conditions, the contents of

the memory location specified by the address pins appear on

the IO pins.
The eight input and output pins (IO

0

 through IO

7

) are placed

in a high impedance state when the device is deselected (CE

1

HIGH or CE

2

 LOW), the outputs are disabled (OE HIGH), or

during a write operation (CE

LOW and CE

2

 HIGH and WE

LOW).

Logic Block Diagram

A0

IO0

IO7

IO1
IO2
IO3
IO4
IO5
IO6

A1

A2

A3

A4

A5

A6

A7

A8

A9

SENSE AMPS

POWER

 DOWN

WE

OE

A

13

A

14

A

15

A

16

ROW DECODER

COLUMN DECODER

256K x 8

ARRAY

DATA IN DRIVERS

A10

A11

A

17

CE1

CE2

A

12

Note

1. For best practice recommendations, refer to the Cypress application note 

“System Design Guidelines”

 at 

http://www.cypress.com.

[+] Feedback 

Summary of Contents for MoBL CY62138F

Page 1: ...tion when addresses are not toggling Placing the device into standby mode reduces power consumption by more than 99 when deselected CE1 HIGH or CE2 LOW To write to the device take Chip Enable CE1 LOW and CE2 HIGH and Write Enable WE inputs LOW Data on the eight IO pins IO0 through IO7 is then written into the location specified on the address pins A0 through A17 To read from the device take Chip E...

Page 2: ...5 5V 45 1 6 2 5 13 18 1 5 1 2 3 4 5 6 7 8 9 10 11 14 31 32 12 13 16 15 29 30 21 22 19 20 27 28 25 26 17 18 23 24 32 Pin SOIC TSOP II Pinout Top View A17 A16 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 IO0 IO1 IO2 IO3 IO4 IO5 IO6 IO7 VSS VCC CE2 WE OE CE1 Notes 2 NC pins are not connected on the die 3 Typical values are included for reference only and are not guaranteed or tested Typical ...

Page 3: ...rent GND VI VCC 1 1 µA IOZ Output Leakage Current GND VO VCC Output Disabled 1 1 µA ICC VCC Operating Supply Current f fmax 1 tRC VCC VCC max IOUT 0 mA CMOS levels 13 18 mA f 1 MHz 1 6 2 5 ISB2 7 Automatic CE Power Down Current CMOS inputs CE1 VCC 0 2V or CE2 0 2V VIN VCC 0 2V or VIN 0 2V f 0 VCC VCC max 1 5 µA Capacitance For all packages 8 Parameter Description Test Conditions Max Unit CIN Input...

Page 4: ... Chip Deselect to Data Retention Time 0 ns tR 9 Operation Recovery Time tRC ns Data Retention Waveform 10 3 0V VCC OUTPUT R2 30 pF INCLUDING JIG AND SCOPE GND 90 10 90 10 Rise Time 1 V ns Fall Time 1 V ns OUTPUT V Equivalent to THEVENIN EQUIVALENT ALL INPUT PULSES RTH R1 VCC min VCC min tCDR VDR 2 0V DATA RETENTION MODE tR VCC CE Notes 9 Full device AC operation requires linear VCC ramp from VDR t...

Page 5: ...ns tSD Data Setup to Write end 25 ns tHD Data Hold from Write End 0 ns tHZWE WE LOW to High Z 12 13 18 ns tLZWE WE HIGH to Low Z 12 10 ns Notes 11 Test conditions for all parameters other than tri state parameters assume signal transition time of 3 ns 1V ns or less timing reference levels of VCC typ 2 input pulse levels of 0 to VCC typ and output loading of the specified IOL IOH as shown in the AC...

Page 6: ...DANCE ICC ISB HIGH ADDRESS CE DATA OUT VCC SUPPLY CURRENT OE DATA VALID tHD tSD tPWE tSA tHA tAW tSCE tWC tHZOE ADDRESS CE WE DATA IO OE NOTE 20 Notes 15 The device is continuously selected OE CE1 VIL CE2 VIH 16 WE is HIGH for read cycle 17 Address valid before or similar to CE1 transition LOW and CE2 transition HIGH 18 Data IO is high impedance if OE VIH 19 If CE1 goes HIGH or CE2 goes LOW simult...

Page 7: ...bled Active ICC Ordering Information Speed ns Ordering Code Package Diagram Package Type Operating Range 45 CY62138FLL 45SXI 51 85081 32 pin Small Outline Integrated Circuit Pb free Industrial CY62138FLL 45ZSXI 51 85095 32 pin Thin Small Outline Package II Pb free Contact your local Cypress sales representative for availability of these parts Switching Waveforms continued tWC DATA VALID tAW tSA tP...

Page 8: ... 85081 0 546 13 868 0 440 11 176 0 101 2 565 0 050 1 270 0 014 0 355 0 118 2 997 0 004 0 102 0 047 1 193 0 006 0 152 0 023 0 584 0 793 20 142 0 450 11 430 0 566 14 376 0 111 2 819 0 817 20 751 BSC 0 020 0 508 MIN MAX 0 012 0 304 0 039 0 990 0 063 1 600 SEATING PLANE 1 16 17 32 0 004 0 102 51 85081 B Feedback ...

Page 9: ...ss written agreement with Cypress Furthermore Cypress does not authorize its products for use as critical components in life support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user The inclusion of Cypress products in life support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies ...

Page 10: ...t History Page Document Title CY62138F MoBL 2 Mbit 256K x 8 Static RAM Document Number 001 13194 REV ECN NO Issue Date Orig of Change Description of Change 797956 See ECN VKN New Data Sheet A 940341 See ECN VKN Added footnote 7 related to ISB2 and ICCDR Feedback ...

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