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CY7C1411JV18, CY7C1426JV18

CY7C1413JV18, CY7C1415JV18

Document Number: 001-12557 Rev. *C

Page 8 of 28

Functional Overview

The CY7C1411JV18, CY7C1426JV18, CY7C1413JV18, and
CY7C1415JV18 are synchronous pipelined burst SRAMs with a
read port and a write port. The read port is dedicated to read
operations and the write port is dedicated to write operations.
Data flows into the SRAM through the write port and flows out
through the read port. These devices multiplex the address
inputs to minimize the number of address pins required. By
having separate read and write ports, the QDR-II completely
eliminates the need to “turn around” the data bus and avoids any
possible data contention, thereby simplifying system design.
Each access consists of four 8-bit data transfers in the case of
CY7C1411JV18, four 9-bit data transfers in the case of
CY7C1426JV18, four 18-bit data transfers in the case of
CY7C1413JV18, and four 36-bit transfers data in the case of
CY7C1415JV18 in two clock cycles.

This device operates with a read latency of one and half cycles
when DOFF pin is tied HIGH. When DOFF pin is set LOW or
connected to V

SS

 then device behaves in QDR-I mode with a

read latency of one clock cycle. 

Accesses for both ports are initiated on the positive input clock
(K). All synchronous input timing is referenced from the rising
edge of the input clocks (K and K) and all output timing is refer-
enced to the output clocks (C and C or K and K when in single
clock mode).

All synchronous data inputs (D

[x:0]

) pass through input registers

controlled by the input clocks (K and K). All synchronous data
outputs (Q

[x:0]

) pass through output registers controlled by the

rising edge of the output clocks (C and C or K and K when in
single clock mode). 

All synchronous control (RPS, WPS, BWS

[x:0]

) inputs pass

through input registers controlled by the rising edge of the input
clocks (K and K). 

CY7C1413JV18 is described in the following sections. The same
basic descriptions apply to CY7C1411JV18, CY7C1426JV18,
and CY7C1415JV18. 

Read Operations

The CY7C1413JV18 is organized internally as four arrays of
512K x 18. Accesses are completed in a burst of four sequential
18-bit data words. Read operations are initiated by asserting
RPS

 

active at the rising edge of the positive input clock (K). The

address presented to address inputs are stored in the read
address register. Following the next K clock rise, the corre-
sponding lowest order 18-bit word of data is driven onto the
Q

[17:0]

 using C as the output timing reference. On the subse-

quent rising edge of C, the next 18-bit data word is driven onto
the Q

[17:0]

. This process continues until all four 18-bit data words

have been driven out onto Q

[17:0]

. The requested data is valid

0.45 ns from the rising edge of the output clock (C or C, or K or
K when in single clock mode). To maintain the internal logic, each
read access must be allowed to complete. Each read access
consists of four 18-bit data words and takes two clock cycles to
complete. Therefore, read accesses to the device can not be
initiated on two consecutive K clock rises. The internal logic of
the device ignores the second read request. Read accesses can
be initiated on every other K clock rise. Doing so pipelines the
data flow such that data is transferred out of the device on every

rising edge of the output clocks (C and C, or K and K when in
single clock mode). 

When the read port is deselected, the CY7C1413JV18 first
completes the pending read transactions. Synchronous internal
circuitry automatically tri-states the outputs following the next
rising edge of the positive output clock (C). This enables a
transition between devices without the insertion of wait states in
a depth expanded memory. 

Write Operations

Write operations are initiated by asserting WPS active at the
rising edge of the positive input clock (K). On the following K
clock rise the data presented to D

[17:0]

 is latched and stored into

the lower 18-bit write data register, provided BWS

[1:0]

 are both

asserted active. On the subsequent rising edge of the negative
input clock (K), the information presented to D

[17:0]

 is also stored

into the write data register, provided BWS

[1:0]

 are both asserted

active. This process continues for one more cycle until four 18-bit
words (a total of 72 bits) of data are stored in the SRAM. The 72
bits of data are then written into the memory array at the specified
location. Therefore, write accesses to the device cannot be
initiated on two consecutive K clock rises. The internal logic of
the device ignores the second write request. Initiate write access
on every other rising edge of the positive input clock (K). Doing
so pipelines the data flow such that 18 bits of data transfers into
the device on every rising edge of the input clocks (K and K). 

When deselected, the write port ignores all inputs after the
pending write operations have been completed. 

Byte Write Operations

Byte write operations are supported by the CY7C1413JV18. A
write operation is initiated as described in the 

Write Operations

section. The bytes that are written are determined by BWS

0

 and

BWS

1

, which are sampled with each set of 18-bit data words.

Asserting the byte write select input during the data portion of a
write latches the data being presented and writes it into the
device. Deasserting the byte write select input during the data
portion of a write enables the data stored in the device for that
byte to remain unaltered. This feature can be used to simplify
read, modify, or write operations to a byte write operation.

Single Clock Mode

The CY7C1411JV18 can be used with a single clock that controls
both the input and output registers. In this mode the device
recognizes only a single pair of input clock (K and K) that control
both the input and output registers. This operation is identical to
the operation if the device had zero skew between the K/K and
C/C clocks. All timing parameters remains the same in this mode.
To use this mode of operation, the user must tie C and C HIGH
at power on. This function is a strap option and not alterable
during device operation.

Concurrent Transactions

The read and write ports on the CY7C1413JV18 operates
independently of one another. As each port latches the address
inputs on different clock edges, the user can read or write to any
location, regardless of the transaction on the other port. If the
ports access the same location when a read follows a write in
successive clock cycles, the SRAM delivers the most recent
information associated with the specified address location. This

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Summary of Contents for CY7C1411JV18

Page 1: ...CY7C1415JV18 are 1 8V Synchronous Pipelined SRAMs equipped with QDR II architecture QDR II architecture consists of two separate ports to access the memory array The read port has dedicated data outp...

Page 2: ...r Reg Reg Reg 16 20 32 8 NWS 1 0 VREF Write Add Decode Write Reg 16 A 20 0 20 8 CQ CQ DOFF Q 7 0 8 8 8 Write Reg Write Reg Write Reg C C 1M x 8 Array 1M x 8 Array 1M x 8 Array 8 CLK A 19 0 Gen K K Con...

Page 3: ...VREF Write Add Decode Write Reg 36 A 18 0 19 18 CQ CQ DOFF Q 17 0 18 18 18 Write Reg Write Reg Write Reg C C 512K x 18 Array 512K x 18 Array 512K x 18 Array 512K x 18 Array 18 256K x 36 Array CLK A 1...

Page 4: ...VSS VSS VSS VDDQ NC NC Q0 M NC NC NC VSS VSS VSS VSS VSS NC NC D0 N NC D7 NC VSS A A A VSS NC NC NC P NC NC Q7 A A C A A NC NC NC R TDO TCK A A A C A A A TMS TDI CY7C1426JV18 4M x 9 1 2 3 4 5 6 7 8 9...

Page 5: ...A A C A A NC D0 Q0 R TDO TCK A A A C A A A TMS TDI CY7C1415JV18 1M x 36 1 2 3 4 5 6 7 8 9 10 11 A CQ NC 288M NC 72M WPS BWS2 K BWS1 RPS A NC 144M CQ B Q27 Q18 D18 A BWS3 K BWS0 A D17 Q17 Q8 C D27 Q28...

Page 6: ...x 8 for CY7C1411JV18 4M x 9 4 arrays each of 1M x 9 for CY7C1426JV18 2M x 18 4 arrays each of 512K x 18 for CY7C1413JV18 and 1M x 36 4 arrays each of 256K x 36 for CY7C1415JV18 Therefore only 20 addre...

Page 7: ...GND or left unconnected DOFF Input DLL Turn Off Active LOW Connecting this pin to ground turns off the DLL inside the device The timings in the DLL turned off operation differs from those listed in th...

Page 8: ...ry other K clock rise Doing so pipelines the data flow such that data is transferred out of the device on every rising edge of the output clocks C and C or K and K when in single clock mode When the r...

Page 9: ...impedance matching with a tolerance of 15 is between 175 and 350 with VDDQ 1 5V The output impedance is adjusted every 1024 cycles upon power up to account for drifts in supply voltage and temperatur...

Page 10: ...data portion of a write sequence CY7C1411JV18 only the upper nibble D 7 4 is written into the device D 3 0 remains unaltered CY7C1413JV18 only the upper byte D 17 9 is written into the device D 8 0 r...

Page 11: ...into the device D 35 9 remains unaltered L H H H L H During the data portion of a write sequence only the lower byte D 8 0 is written into the device D 35 9 remains unaltered H L H H L H During the d...

Page 12: ...ling edge of TCK Instruction Register Three bit instructions can be serially loaded into the instruction register This register is loaded when it is placed between the TDI and TDO pins as shown in TAP...

Page 13: ...scan register After the data is captured it is possible to shift out the data by putting the TAP into the Shift DR state This places the boundary scan register between the TDI and TDO pins PRELOAD pl...

Page 14: ...ntroller follows 11 TEST LOGIC RESET TEST LOGIC IDLE SELECT DR SCAN CAPTURE DR SHIFT DR EXIT1 DR PAUSE DR EXIT2 DR UPDATE DR 1 0 1 1 0 1 0 1 0 0 0 1 1 1 0 1 0 1 0 0 0 1 0 1 1 0 1 0 0 1 1 0 SELECT IR S...

Page 15: ...t HIGH Voltage 0 65VDD VDD 0 3 V VIL Input LOW Voltage 0 3 0 35VDD V IX Input and Output Load Current GND VI VDD 5 5 A 0 0 1 2 29 30 31 Boundary Scan Register Identification Register 0 1 2 108 0 1 2 I...

Page 16: ...tTDIH TDI Hold after Clock Rise 5 ns tCH Capture Hold after Clock Rise 5 ns Output Times tTDOV TCK Clock LOW to TDO Valid 10 ns tTDOX TCK Clock LOW to TDO Invalid 0 ns TAP Timing and Test Conditions...

Page 17: ...Instruction Codes Instruction Code Description EXTEST 000 Captures the input and output ring contents IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and T...

Page 18: ...L 7 8P 35 10E 63 2A 91 3L 8 9R 36 10D 64 1A 92 1M 9 11P 37 9E 65 2B 93 1L 10 10P 38 10C 66 3B 94 3N 11 10N 39 11D 67 1C 95 3M 12 9P 40 9C 68 1B 96 1N 13 10M 41 9D 69 3D 97 2M 14 11N 42 11B 70 3C 98 3P...

Page 19: ...lock K K for 1024 cycles to lock the DLL DLL Constraints DLL uses K clock as its synchronizing input The input must have low phase jitter which is specified as tKC Var The DLL functions at frequencies...

Page 20: ...t HIGH Voltage Note 18 VDDQ 2 0 12 VDDQ 2 0 12 V VOL Output LOW Voltage Note 19 VDDQ 2 0 12 VDDQ 2 0 12 V VOH LOW Output HIGH Voltage IOH 0 1 mA Nominal Impedance VDDQ 0 2 VDDQ V VOL LOW Output LOW Vo...

Page 21: ...18 355 x36 395 250 MHz x8 355 mA x9 355 x18 355 x36 370 200 MHz x8 300 mA x9 300 x18 300 x36 300 AC Electrical Characteristics Over the Operating Range 13 Parameter Description Test Conditions Min Typ...

Page 22: ...unction to Ambient Test conditions follow standard test methods and procedures for measuring thermal impedance in accordance with EIA JESD51 17 2 C W JC Thermal Resistance Junction to Case 3 2 C W Fig...

Page 23: ...45 0 45 0 45 ns tDOH tCHQX Data Output Hold after Output C C Clock Rise Active to Active 0 45 0 45 0 45 ns tCCQO tCHCQV C C Clock Rise to Echo Clock Valid 0 45 0 45 0 45 ns tCQOH tCHCQX Echo Clock Hol...

Page 24: ...tCQD tCLZ DOH tCHZ t t tKL tCYC tCCQO t CCQO tCQOH tCQOH KHKH KH Q00 Q03 Q01 Q02 Q20 Q23 Q21 Q22 tCO tCQDOH t tCQH tCQHCQH D10 D11 D12 D13 t SD tHD tSD tHD D30 D31 D32 D33 Notes 27 Q00 refers to outp...

Page 25: ...all Fine Pitch Ball Grid Array 15 x 17 x 1 4 mm Industrial CY7C1426JV18 300BZI CY7C1413JV18 300BZI CY7C1415JV18 300BZI CY7C1411JV18 300BZXI 51 85195 165 Ball Fine Pitch Ball Grid Array 15 x 17 x 1 4 m...

Page 26: ...5JV18 200BZXC CY7C1411JV18 200BZI 51 85195 165 Ball Fine Pitch Ball Grid Array 15 x 17 x 1 4 mm Industrial CY7C1426JV18 200BZI CY7C1413JV18 200BZI CY7C1415JV18 200BZI CY7C1411JV18 200BZXI 51 85195 165...

Page 27: ...JV18 CY7C1415JV18 Document Number 001 12557 Rev C Page 27 of 28 Package Diagram Figure 6 165 Ball FBGA 15 x 17 x 1 40 mm 51 85195 0 2 2 8 8 8 3 4 0 0 2 2 4 0 6 7 44 6 7 0 2 0 2 3 2 0 490 3 2 3 3 4 3 0...

Page 28: ...RD TO THIS MATERIAL INCLUDING BUT NOT LIMITED TO THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE Cypress reserves the right to make changes without further notice to the...

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