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CY7C1392BV18, CY7C1992BV18
CY7C1393BV18, CY7C1394BV18

Document #: 38-05623 Rev. *D

Page 12 of 31

IEEE 1149.1 Serial Boundary Scan (JTAG)

These SRAMs incorporate a serial boundary scan Test Access
Port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard #1149.1-2001. The TAP operates using JEDEC
standard 1.8V IO logic levels.

Disabling the JTAG Feature

It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(V

SS

) to prevent clocking of the device. TDI and TMS are inter-

nally pulled up and may be unconnected. They may alternatively
be connected to V

DD

 through a pull up resistor. TDO must be left

unconnected. Upon power up, the device comes up in a reset
state, which does not interfere with the operation of the device.

Test Access Port—Test Clock

The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.

Test Mode Select (TMS)

The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The pin is pulled up inter-
nally, resulting in a logic HIGH level.

Test Data-In (TDI)

The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information on
loading the instruction register, see the 

TAP Controller State

Diagram

 on page 14. TDI is internally pulled up and can be

unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.

Test Data-Out (TDO)

The TDO output pin is used to serially clock data out from the
registers. The output is active, depending upon the current state
of the TAP state machine (see 

Instruction Codes

 on page 17).

The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSB) of any register.

Performing a TAP Reset

A Reset is performed by forcing TMS HIGH (V

DD

) for five rising

edges of TCK. This Reset does not affect the operation of the
SRAM and can be performed while the SRAM is operating. At
power up, the TAP is reset internally to ensure that TDO comes
up in a high-Z state.

TAP Registers

Registers are connected between the TDI and TDO pins to scan
the data in and out of the SRAM test circuitry. Only one register
can be selected at a time through the instruction registers. Data
is serially loaded into the TDI pin on the rising edge of TCK. Data
is output on the TDO pin on the falling edge of TCK.

Instruction Register

Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO pins, as shown in 

TAP Controller Block Diagram

 on

page 15. Upon power up, the instruction register is loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state, as described
in the previous section.

When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary “01” pattern to allow for
fault isolation of the board level serial test path.

Bypass Register

To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This enables shifting of data through the SRAM
with minimal delay. The bypass register is set LOW (V

SS

) when

the BYPASS instruction is executed.

Boundary Scan Register

The boundary scan register is connected to all of the input and
output pins on the SRAM. Several No Connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.

The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can
be used to capture the contents of the input and output ring.

The 

Boundary Scan Order

 on page 18 shows the order in which

the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected to
TDI, and the LSB is connected to TDO.

Identification (ID) Register

The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in 

Identification Register Definitions

 on

page 17.

TAP Instruction Set

Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in 

Instruction

Codes

 on page 17. Three of these instructions are listed as

RESERVED and must not be used. The other five instructions
are described in this section in detail.

Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.

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Summary of Contents for CY7C1392BV18

Page 1: ...te port has data inputs to support write operations The DDR II SIO has separate data inputs and data outputs to completely eliminate the need to turn around the data bus required with common IO device...

Page 2: ...Decode Read Data Reg LD Q 7 0 Reg Reg Reg 8 8 16 8 NWS 1 0 VREF Write Add Decode Write Data Reg 8 8 20 8 R W LD R W CQ CQ DOFF 1M x 8 Array Write Data Reg Control Logic C C 1M x 9 Array CLK A 19 0 Ge...

Page 3: ...d Data Reg LD Q 17 0 Reg Reg Reg 18 36 18 BWS 1 0 VREF Write Add Decode Write Data Reg 18 18 19 18 R W LD R W CQ CQ DOFF 512K x 18 Array Write Data Reg Control Logic C C 18 256K x 36 Array CLK A 17 0...

Page 4: ...VSS VSS VSS VDDQ NC NC Q0 M NC NC NC VSS VSS VSS VSS VSS NC NC D0 N NC D7 NC VSS A A A VSS NC NC NC P NC NC Q7 A A C A A NC NC NC R TDO TCK A A A C A A A TMS TDI CY7C1992BV18 2M x 9 1 2 3 4 5 6 7 8 9...

Page 5: ...C D0 Q0 R TDO TCK A A A C A A A TMS TDI CY7C1394BV18 512K x 36 1 2 3 4 5 6 7 8 9 10 11 A CQ NC 288M NC 72M R W BWS2 K BWS1 LD NC 36M NC 144M CQ B Q27 Q18 D18 A BWS3 K BWS0 A D17 Q17 Q8 C D27 Q28 D19 V...

Page 6: ...tions Internally the device is organized as 2M x 8 2 arrays each of 1M x 8 for CY7C1392BV18 2M x 9 2 arrays each of 1M x 9 for CY7C1992BV18 1M x 18 2 arrays each of 512K x 18 for CY7C1393BV18 and 512K...

Page 7: ...nnected directly to VDDQ which enables the minimum impedance mode This pin cannot be connected directly to GND or left unconnected DOFF Input DLL Turn Off Active LOW Connecting this pin to ground turn...

Page 8: ...k K This pipelines the data flow such that 18 bits of data can be transferred into the device on every rising edge of the input clocks K and K When Write access is deselected the device ignores all in...

Page 9: ...024 clock cycles after a stable clock is presented The DLL may be disabled by applying ground to the DOFF pin When the DLL is turned off the device behaves in DDR I mode with one cycle latency and a l...

Page 10: ...ten into the device D 17 9 remains unaltered H L L H During the data portion of a write sequence CY7C1392BV18 only the upper nibble D 7 4 is written into the device D 3 0 remains unaltered CY7C1393BV1...

Page 11: ...the device D 35 9 remains unaltered L H H H L H During the data portion of a write sequence only the lower byte D 8 0 is written into the device D 35 9 remains unaltered H L H H L H During the data p...

Page 12: ...edge of TCK Instruction Register Three bit instructions can be serially loaded into the instruction register This register is loaded when it is placed between the TDI and TDO pins as shown in TAP Con...

Page 13: ...scan register After the data is captured it is possible to shift out the data by putting the TAP into the Shift DR state This places the boundary scan register between the TDI and TDO pins PRELOAD pl...

Page 14: ...oller follows 9 TEST LOGIC RESET TEST LOGIC IDLE SELECT DR SCAN CAPTURE DR SHIFT DR EXIT1 DR PAUSE DR EXIT2 DR UPDATE DR 1 0 1 1 0 1 0 1 0 0 0 1 1 1 0 1 0 1 0 0 0 1 0 1 1 0 1 0 0 1 1 0 SELECT IR SCAN...

Page 15: ...GH Voltage 0 65VDD VDD 0 3 V VIL Input LOW Voltage 0 3 0 35VDD V IX Input and Output Load Current GND VI VDD 5 5 A 0 0 1 2 29 30 31 Boundary Scan Register Identification Register 0 1 2 106 0 1 2 Instr...

Page 16: ...IH TDI Hold after Clock Rise 5 ns tCH Capture Hold after Clock Rise 5 ns Output Times tTDOV TCK Clock LOW to TDO Valid 10 ns tTDOX TCK Clock LOW to TDO Invalid 0 ns TAP Timing and Test Conditions Figu...

Page 17: ...ruction Codes Instruction Code Description EXTEST 000 Captures the input and output ring contents IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO T...

Page 18: ...7 2K 7 8P 34 11E 61 4B 88 1K 8 9R 35 10E 62 3A 89 2L 9 11P 36 10D 63 1H 90 3L 10 10P 37 9E 64 1A 91 1M 11 10N 38 10C 65 2B 92 1L 12 9P 39 11D 66 3B 93 3N 13 10M 40 9C 67 1C 94 3M 14 11N 41 9D 68 1B 95...

Page 19: ...K K for 1024 cycles to lock the DLL DLL Constraints DLL uses K clock as its synchronizing input The input must have low phase jitter which is specified as tKC Var The DLL functions at frequencies dow...

Page 20: ...H Output HIGH Voltage Note 16 VDDQ 2 0 12 VDDQ 2 0 12 V VOL Output LOW Voltage Note 17 VDDQ 2 0 12 VDDQ 2 0 12 V VOH LOW Output HIGH Voltage IOH 0 1 mA Nominal Impedance VDDQ 0 2 VDDQ V VOL LOW Output...

Page 21: ...300 MHz x8 275 mA x9 275 x18 285 x36 300 278 MHz x8 265 mA x9 265 x18 275 x36 290 250 MHz x8 255 mA x9 255 x18 260 x36 275 200 MHz x8 245 mA x9 245 x18 250 x36 260 167 MHz x8 240 mA x9 240 x18 245 x36...

Page 22: ...tion to Ambient Test conditions follow standard test methods and procedures for measuring thermal impedance in accordance with EIA JESD51 18 7 C W JC Thermal Resistance Junction to Case 4 5 C W Figure...

Page 23: ...LD R W 0 4 0 4 0 5 0 6 0 7 ns tSCDDR tIVKH Double Data Rate Control Setup to Clock K K Rise BWS0 BWS1 BWS2 BWS3 0 3 0 3 0 35 0 4 0 5 ns tSD 23 tDVKH D X 0 Setup to Clock K K Rise 0 3 0 3 0 35 0 4 0 5...

Page 24: ...HQZ Clock C C Rise to High Z Active to High Z 24 25 0 45 0 45 0 45 0 45 0 50 ns tCLZ tCHQX1 Clock C C Rise to Low Z 24 25 0 45 0 45 0 45 0 45 0 50 ns DLL Timing tKC Var tKC Var Clock Phase Jitter 0 20...

Page 25: ...C tSA tHA tSD tHD tSD tHD tCLZ tDOH SC tKH tKHKH tKL tCYC tCQD tCCQO tCQOH tCCQO tCQOH DON T CARE UNDEFINED A0 A1 A2 A3 A4 D20 D21 D30 D31 Q40 Q11 Q10 Q41 Q00 Q01 tCQDOH tCHZ Notes 26 Q00 refers to ou...

Page 26: ...Fine Pitch Ball Grid Array 13 x 15 x 1 4 mm Industrial CY7C1992BV18 300BZI CY7C1393BV18 300BZI CY7C1394BV18 300BZI CY7C1392BV18 300BZXI 51 85180 165 Ball Fine Pitch Ball Grid Array 13 x 15 x 1 4 mm Pb...

Page 27: ...250BZXI 200 CY7C1392BV18 200BZC 51 85180 165 Ball Fine Pitch Ball Grid Array 13 x 15 x 1 4 mm Commercial CY7C1992BV18 200BZC CY7C1393BV18 200BZC CY7C1394BV18 200BZC CY7C1392BV18 200BZXC 51 85180 165 B...

Page 28: ...8 167BZXC CY7C1392BV18 167BZI 51 85180 165 Ball Fine Pitch Ball Grid Array 13 x 15 x 1 4 mm Industrial CY7C1992BV18 167BZI CY7C1393BV18 167BZI CY7C1394BV18 167BZI CY7C1392BV18 167BZXI 51 85180 165 Bal...

Page 29: ...0 05 M C B A 0 15 4X 0 35 0 06 SEATING PLANE 0 53 0 05 0 25 C 0 15 C PIN 1 CORNER TOP VIEW BOTTOM VIEW 2 3 4 5 6 7 8 9 10 10 00 14 00 B C D E F G H J K L M N 11 11 10 9 8 6 7 5 4 3 2 1 P R P R K M N L...

Page 30: ...anged C C Pin Description in the features section and Pin Description Added power up sequence details and waveforms Added foot notes 15 16 17 on page 18 Replaced Three state with Tri state Changed the...

Page 31: ...as specified above is prohibited without the express written permission of Cypress Disclaimer CYPRESS MAKES NO WARRANTY OF ANY KIND EXPRESS OR IMPLIED WITH REGARD TO THIS MATERIAL INCLUDING BUT NOT LI...

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