Cypress Semiconductor CY7C1339G Specification Sheet Download Page 3

CY7C1339G

Document #: 38-05520 Rev. *F

Page 3 of 18

Pin Configurations 

(continued)

Pin Definitions

Name

I/O

Description

A

0

, A

1

, A

Input-

Synchronous

Address Inputs used to select one of the 128K address locations

. Sampled at the rising edge 

of the CLK if ADSP or ADSC is active LOW, and CE

1

,

 

CE

2

, and

 

CE

are sampled active. A1, A0 

are fed to the two-bit counter..

BW

A

, BW

B

BW

C

, BW

D

Input-

Synchronous

Byte Write Select Inputs, active LOW

. Qualified with BWE to conduct byte writes to the SRAM. 

Sampled on the rising edge of CLK.

GW

Input-

Synchronous

Global Write Enable Input, active LOW

. When asserted LOW on the rising edge of CLK, a global 

write is conducted (ALL bytes are written, regardless of the values on BW

[A:D]

 and BWE).

BWE

Input-

Synchronous

Byte Write Enable Input, active LOW

. Sampled on the rising edge of CLK. This signal must be 

asserted LOW to conduct a byte write.

CLK

Input-
Clock

Clock Input

. Used to capture all synchronous inputs to the device. Also used to increment the 

burst counter when ADV is asserted LOW, during a burst operation.

CE

1

Input-

Synchronous

Chip Enable 1 Input, active LOW

. Sampled on the rising edge of CLK. Used in conjunction with 

CE

2

 and CE

3

 to select/deselect the device. ADSP is ignored if CE

1

 is HIGH. CE

1

 is sampled only 

when a new external address is loaded.

CE

2

Input-

Synchronous

Chip Enable 2 Input, active HIGH

. Sampled on the rising edge of CLK. Used in conjunction with 

CE

1

 and CE

3

 to select/deselect the device.CE

is sampled only when a new external address is 

loaded.

CE

3

Input-

Synchronous

Chip Enable 3 Input, active LOW

. Sampled on the rising edge of CLK. Used in conjunction with 

CE

and

 

CE

2

 to select/deselect the device. CE

3

 is sampled only when a new external address is 

loaded. Not connected for BGA. Where referenced, CE

3

 is assumed active throughout this 

document for BGA.

OE

Input-

Asynchronous

Output Enable, asynchronous input, active LOW

. Controls the direction of the I/O pins. When 

LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as 
input data pins. OE is masked during the first clock of a read cycle when emerging from a 
deselected state.

2

3

4

5

6

7

1

A

B

C

D

E

F

G

H

J

K

L

M

N

P

R

T

U

V

DDQ

NC/288M

NC/144M

NC

DQ

C

DQ

D

DQ

C

DQ

D

A

A

A

A

ADSP

V

DDQ

CE

2

A

DQ

C

V

DDQ

DQ

C

V

DDQ

V

DDQ

V

DDQ

DQ

D

DQ

D

NC

NC

V

DDQ

V

DD

CLK

V

DD

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

NC/576M

NC/1G

NC

NC

NC

NC

NC

NC

NC/36M

NC/72M

NC

V

DDQ

V

DDQ

V

DDQ

A

A

A

A

NC/9M

A

A

A

A

A

A

A0

A1

DQ

A

DQ

C

DQ

A

DQ

A

DQ

A

DQ

B

DQ

B

DQ

B

DQ

B

DQ

B

DQ

B

DQ

B

DQ

A

DQ

A

DQ

A

DQ

A

DQ

B

V

DD

DQ

C

DQ

C

DQ

C

V

DD

DQ

D

DQ

D

DQ

D

DQ

D

ADSC

NC

CE

1

OE

ADV

GW

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

NC

MODE

NC

NC

BW

B

BW

c

NC

V

DD

NC

BW

A

NC

BWE

BW

D

ZZ

119-Ball BGA Pinout

[+] Feedback 

Summary of Contents for CY7C1339G

Page 1: ...Write GW Asynchronous inputs include the Output Enable OE and the ZZ pin Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor ADSP or Address Strobe...

Page 2: ...A DQA DQA DQA VSSQ VDDQ DQA DQA NC NC DQC DQC VDDQ VSSQ DQC DQC DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD NC A A CE 1 CE 2 BW D BW C BW B BW A CE 3 V...

Page 3: ...sampled only when a new external address is loaded CE2 Input Synchronous Chip Enable 2 Input active HIGH Sampled on the rising edge of CLK Used in conjunction with CE1 and CE3 to select deselect the d...

Page 4: ...tate to a selected state its outputs are always tri stated during the first cycle of the access After the first cycle of the access the outputs are controlled by the OE ADV Input Synchronous Advance I...

Page 5: ...s conducted the data presented to the DQs is written into the corresponding address location in the memory core If a Byte Write is conducted only the selected bytes are written Bytes not selected duri...

Page 6: ...X X X L H H H H L L H Q READ Cycle Suspend Burst Current X X X L H H H H H L H Tri State READ Cycle Suspend Burst Current H X X L X H H H L L H Q READ Cycle Suspend Burst Current H X X L X H H H H L H...

Page 7: ...rite Bytes C B H L H L L H Write Bytes C B A H L H L L L Write Byte D DQD H L L H H H Write Bytes D A H L L H H L Write Bytes D B H L L H L H Write Bytes D B A H L L H L L Write Bytes D C H L L L H H...

Page 8: ...V for 2 5V I O IOL 1 0 mA 0 4 V VIH Input HIGH Voltage 9 for 3 3V I O 2 0 VDD 0 3V V for 2 5V I O 1 7 VDD 0 3V V VIL Input LOW Voltage 9 for 3 3V I O 0 3 0 8 V for 2 5V I O 0 3 0 7 V IX Input Leakage...

Page 9: ...Junction to Ambient Test conditions follow standard test methods and procedures for measuring thermal impedance per EIA JESD51 30 32 34 1 C W JC Thermal Resistance Junction to Case 6 85 14 0 C W AC T...

Page 10: ...1 5 1 5 ns Hold Times tAH Address Hold After CLK Rise 0 3 0 5 0 5 0 5 ns tADH ADSP ADSC Hold After CLK Rise 0 3 0 5 0 5 0 5 ns tADVH ADV Hold After CLK Rise 0 3 0 5 0 5 0 5 ns tWEH GW BWE BWX Hold Af...

Page 11: ...CE3 is HIGH tCYC t CL CLK ADSP t ADH t ADS ADDRESS t CH OE ADSC CE tAH tAS A1 tCEH tCES GW BWE BW A D Data Out Q High Z tCLZ tDOH tCO ADV tOEHZ tCO Single READ BURST READ tOEV tOELZ tCHZ ADV suspends...

Page 12: ...ADS ADDRESS tCH OE ADSC CE tAH tAS A1 tCEH tCES BWE BW A D Data Out Q High Z ADV BURST READ BURST WRITE D A2 D A2 1 D A2 1 D A1 D A3 D A3 1 D A3 2 D A2 3 A2 A3 Data In D Extended BURST WRITE D A2 2 Si...

Page 13: ...ed by ADSP or ADSC 21 GW is HIGH Switching Waveforms continued tCYC tCL CLK ADSP tADH tADS ADDRESS tCH OE ADSC CE tAH tAS A2 tCEH tCES BWE BW A D Data Out Q High Z ADV Single WRITE D A3 A4 A5 A6 D A5...

Page 14: ...entering ZZ mode See Cycle Descriptions table for all possible signal conditions to deselect the device 23 DQs are in high Z when exiting ZZ sleep mode Switching Waveforms continued t ZZ I SUPPLY CLK...

Page 15: ...39G 166BGXC 119 ball Ball Grid Array 14 x 22 x 2 4 mm Lead Free CY7C1339G 166AXI 51 85050 100 pin Thin Quad Flat Pack 14 x 20 x 1 4 mm Lead Free Industrial CY7C1339G 166BGI 51 85115 119 ball Ball Grid...

Page 16: ...IONS IN MILLIMETERS BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 0 30 0 08 0 65 20 00 0 10 22 00 0 20 1 40 0 05 12 1 1 60 MAX 0 05 MIN 0 60 0 15 0 MIN 0 25 0 7 8X STAND OFF...

Page 17: ...al components in life support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user The inclusion of Cypress products in life support systems ap...

Page 18: ...ormation by shading and unshading MPNs as per availability C 351194 See ECN PCI Updated Ordering Information Table D 366728 See ECN PCI Added VDD VDDQ test conditions in DC Table Modified test conditi...

Reviews: