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PRELIMINARY

CY7C1330AV25
CY7C1332AV25

Document No: 001-07844 Rev. *A

Page 7 of 19

EXTEST

EXTEST is a mandatory 1149.1 instruction which is to be
executed whenever the instruction register is loaded with all
0s. EXTEST is not implemented in this SRAM TAP controller,
and therefore this device is not compliant to 1149.1. The TAP
controller does recognize an all-0 instruction.

When an EXTEST instruction is loaded into the instruction
register, the SRAM responds as if a SAMPLE/PRELOAD
instruction has been loaded. There is one difference between
the two instructions. Unlike the SAMPLE/PRELOAD
instruction, EXTEST places the SRAM outputs in a High-Z
state.

IDCODE

The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO pins and allows
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state. The IDCODE instruction
is loaded into the instruction register upon power-up or
whenever the TAP controller is given a test logic reset state.

SAMPLE Z

The SAMPLE Z instruction causes the boundary scan register
to be connected between the TDI and TDO pins when the TAP
controller is in a Shift-DR state. The SAMPLE Z command puts
the output bus into a High-Z state until the next command is
given during the “Update IR” state.

SAMPLE/PRELOAD

SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the inputs and output pins is
captured in the boundary scan register. 

The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because

there is a large difference in the clock frequencies, it is
possible that during the Capture-DR state, an input or output
will undergo a transition. The TAP may then try to capture a
signal while in transition (metastable state). This will not harm
the device, but there is no guarantee as to the value that will
be captured. Repeatable results may not be possible.

To guarantee that the boundary scan register will capture the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture set-up plus
hold times (t

CS

 and t

CH

). The SRAM clock input might not be

captured correctly if there is no way in a design to stop (or
slow) the clock during a SAMPLE/PRELOAD instruction. If this
is an issue, it is still possible to capture all other signals and
simply ignore the value of the CK and CK  captured  in  the
boundary scan register.

Once the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO pins.

PRELOAD allows an initial data pattern to be placed at the
latched parallel outputs of the boundary scan register cells
prior to the selection of another boundary scan test operation.

The shifting of data for the SAMPLE and PRELOAD phases
can occur concurrently when required—that is, while data
captured is shifted out, the preloaded data can be shifted in.

BYPASS

When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO pins. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.

Reserved

These instructions are not implemented but are reserved for
future use. Do not use these instructions. 

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Summary of Contents for CY7C1330AV25

Page 1: ...d with late write operation These SRAMs can achieve speeds up to 250 MHz Each memory cell consists of six transistors Late write feature avoids an idle cycle required during the turnaround of the bus...

Page 2: ...REF VSS VSS VSS VSS M1 CE VSS OE VSS VDDQ BWSc NC VSS NC VDDQ VDD VREF VDD VSS K K BWSa WE VSS VDDQ VSS ZZ NC NC A A A0 A1 VSS VDD M2 CY7C1330AV25 512K x 36 DQc DQb A DQc DQb DQc DQc DQc DQb DQb DQa D...

Page 3: ...n HIGH DQa DQd are placed in a tri state condition The outputs are automatically tri stated during the data portion of a write sequence during the first clock when emerging from a deselected state and...

Page 4: ...ss is initiated when the following conditions are satisfied at clock rise 1 CE is asserted active and 2 the write signal WE is asserted LOW The address presented to Ax is loaded into the Address Regis...

Page 5: ...V25 WE BWd BWc BWb BWa Read 1 X X X X Write Byte 0 DQa 0 1 1 1 0 Write Byte 1 DQb 0 1 1 0 1 Write Bytes 1 0 0 1 1 0 0 Write Byte 2 DQc 0 1 0 1 1 Write Bytes 2 0 0 1 0 1 0 Write Bytes 2 1 0 1 0 0 1 Wri...

Page 6: ...CK Data is output on the TDO pin on the falling edge of TCK Instruction Register Three bit instructions can be serially loaded into the instruction register This register is loaded when it is placed b...

Page 7: ...y up to 20 MHz while the SRAM clock operates more than an order of magnitude faster Because there is a large difference in the clock frequencies it is possible that during the Capture DR state an inpu...

Page 8: ...the value at TMS at the rising edge of TCK TAP Controller State Diagram 6 TEST LOGIC RESET TEST LOGIC IDLE SELECT DR SCAN CAPTURE DR SHIFT DR EXIT1 DR PAUSE DR EXIT2 DR UPDATE DR SELECT IR SCAN CAPTUR...

Page 9: ...Clock LOW 20 ns Set up Times tTMSS TMS Set up to TCK Clock Rise 5 ns tTDIS TDI Set up to TCK Clock Rise 5 ns tCS Capture Set up to TCK Rise 5 ns Hold Times tTMSH TMS Hold after TCK Clock Rise 5 ns tT...

Page 10: ...F Z0 50 GND 1 25V 50 2 5V 0V ALL INPUT PULSES 1 25V Test Clock Test Mode Select TCK TMS Test Data In TDI Test Data Out tTCYC tTMSH tTL tTH tTMSS tTDIS tTDIH tTDOV tTDOX TDO Identification Register Def...

Page 11: ...11 Do Not Use This instruction is reserved for future use SAMPLE PRELOAD 100 Captures the Input Output ring contents Places the boundary scan register between TDI and TDO Does not affect the SRAM oper...

Page 12: ...T 27 6E 51 3G 4 6R 28 7D 52 4D 5 5T 29 6D 53 4E 6 7T 30 6A 54 4G 7 6P 31 6C 55 4H 8 7P 32 5C 56 4M 9 6N 33 5A 57 3L 10 7N 34 6B 58 1K 11 6M 35 5B 59 2K 12 6L 36 3B 60 1L 13 7L 37 2B 61 2L 14 6K 38 3A...

Page 13: ...Impedance Mode 15 VSS 0 2 V VOH3 Output HIGH Voltage IOH 6 0 mA Minimum Impedance Mode 15 VDDQ 0 4 VDDQ V VOL3 Output LOW Voltage IOL 6 0 mA Minimum Impedance Mode 15 VSS 0 4 V VIH Input HIGH Voltage...

Page 14: ...a of AC Test Loads Capacitance 17 Parameter Description Test Conditions Max Unit CIN Input Capacitance TA 25 C f 1 MHz VDD 2 5V VDDQ 1 5V 5 pF CCLK Clock Input Capacitance 6 pF CI O Input Output Capa...

Page 15: ...et Up Before CLK Rise 0 3 0 3 ns tCES Chip Select Set Up 0 3 0 3 ns Hold Times tAH Address Hold After CLK Rise 0 6 0 6 ns tDH Data Input Hold After CLK Rise 0 6 0 6 ns tWEH WE BWx Hold After CLK Rise...

Page 16: ...elect the device Any chip enable can deselect the device 25 RAx stands for Read Address X WAx Write Address X Dx stands for Data in for location X Qx stands for Data out for location X 26 CE held LOW...

Page 17: ...orms continued CLK CE tCYC tCH tCL tCES tCEH DON T CARE UNDEFINED READ WRITE READ DESELECT WRITE Deselect READ WRITE WRITE DESELECT ADDRESS WE Data In Out RA1 tAH tAS tWEStWEH tCO Q1 Out D2 In WA2 WA5...

Page 18: ...s in life support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges All product and company names mentioned in this...

Page 19: ...Document Title CY7C1330AV25 CY7C1332AV25 18 Mbit 512K x 36 1Mbit x 18 Pipelined Register Register Late Write SRAM Document Number 001 07844 REV ECN No Issue Date Orig of Change Description of Change...

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