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CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18

Document #: 38-05619 Rev. *F

Page 12 of 29

IEEE 1149.1 Serial Boundary Scan (JTAG)

These SRAMs incorporate a serial boundary scan Test Access
Port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard #1149.1-1900. The TAP operates using JEDEC
standard 1.8V IO logic levels.

Disabling the JTAG Feature

It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(V

SS

) to prevent clocking of the device. TDI and TMS are inter-

nally pulled up and may be unconnected. They may alternatively
be connected to V

DD

 through a pull up resistor. TDO must be left

unconnected. Upon power up, the device comes up in a reset
state, which does not interfere with the operation of the device.

Test Access Port—Test Clock

The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.

Test Mode Select (TMS)

The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The pin is pulled up inter-
nally, resulting in a logic HIGH level.

Test Data-In (TDI)

The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information on
loading the instruction register, see the 

TAP Controller State

Diagram

 on page 14. TDI is internally pulled up and can be

unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.

Test Data-Out (TDO)

The TDO output pin is used to serially clock data out from the
registers. The output is active, depending upon the current state
of the TAP state machine (see 

Instruction Codes

 on page 17).

The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSB) of any register.

Performing a TAP Reset

A Reset is performed by forcing TMS HIGH (V

DD

) for five rising

edges of TCK. This Reset does not affect the operation of the
SRAM and can be performed while the SRAM is operating. At
power up, the TAP is reset internally to ensure that TDO comes
up in a high-Z state.

TAP Registers

Registers are connected between the TDI and TDO pins to scan
the data in and out of the SRAM test circuitry. Only one register
can be selected at a time through the instruction registers. Data
is serially loaded into the TDI pin on the rising edge of TCK. Data
is output on the TDO pin on the falling edge of TCK.

Instruction Register

Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO pins, as shown in 

TAP Controller Block Diagram

 on

page 15. Upon power up, the instruction register is loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state, as described
in the previous section.

When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary “01” pattern to allow for
fault isolation of the board level serial test path.

Bypass Register

To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This enables shifting of data through the SRAM
with minimal delay. The bypass register is set LOW (V

SS

) when

the BYPASS instruction is executed.

Boundary Scan Register

The boundary scan register is connected to all of the input and
output pins on the SRAM. Several No Connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.

The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can
be used to capture the contents of the input and output ring.

The 

Boundary Scan Order

 on page 18 shows the order in which

the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected to
TDI, and the LSB is connected to TDO.

Identification (ID) Register

The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in 

Identification Register Definitions

 on

page 17.

TAP Instruction Set

Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in 

Instruction

Codes

 on page 17. Three of these instructions are listed as

RESERVED and must not be used. The other five instructions
are described in this section in detail.

Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.

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Summary of Contents for CY7C1310BV18

Page 1: ...two separate ports the read port and the write port to access the memory array The read port has data outputs to support read operations and the write port has data inputs to support write operations...

Page 2: ...d Data Reg RPS WPS Control Logic Address Register Reg Reg Reg 8 20 16 8 NWS 1 0 VREF Write Add Decode Write Reg 8 A 19 0 20 CQ CQ DOFF Q 7 0 8 8 8 Write Reg C C 1M x 8 Array 1M x 9 Array CLK A 19 0 Ge...

Page 3: ...RPS WPS Control Logic Address Register Reg Reg Reg 18 19 36 18 BWS 1 0 VREF Write Add Decode Write Reg 18 A 18 0 19 CQ CQ DOFF Q 17 0 18 18 18 Write Reg C C 512K x 18 Array 256K x 36 Array CLK A 17 0...

Page 4: ...SS VSS VSS VDDQ NC NC Q0 M NC NC NC VSS VSS VSS VSS VSS NC NC D0 N NC D7 NC VSS A A A VSS NC NC NC P NC NC Q7 A A C A A NC NC NC R TDO TCK A A A C A A A TMS TDI CY7C1910BV18 2M x 9 1 2 3 4 5 6 7 8 9 1...

Page 5: ...C D0 Q0 R TDO TCK A A A C A A A TMS TDI CY7C1314BV18 512K x 36 1 2 3 4 5 6 7 8 9 10 11 A CQ NC 288M NC 72M WPS BWS2 K BWS1 RPS NC 36M NC 144M CQ B Q27 Q18 D18 A BWS3 K BWS0 A D17 Q17 Q8 C D27 Q28 D19...

Page 6: ...or CY7C1310BV18 2M x 9 2 arrays each of 1M x 9 for CY7C1910BV18 1M x 18 2 arrays each of 512K x 18 for CY7C1312BV18 and 512K x 36 2 arrays each of 256K x 36 for CY7C1314BV18 Therefore only 20 address...

Page 7: ...cted directly to VDDQ which enables the minimum impedance mode This pin cannot be connected directly to GND or left unconnected DOFF Input DLL Turn Off Active LOW Connecting this pin to ground turns o...

Page 8: ...tion between devices without the insertion of wait states in a depth expanded memory Write Operations Write operations are initiated by asserting WPS active at the rising edge of the positive input cl...

Page 9: ...to K and CQ is generated with respect to K The timing for the echo clocks is shown in the Switching Characteristics on page 23 DLL These chips use a Delay Lock Loop DLL that is designed to function b...

Page 10: ...0 is written into the device D 17 9 remains unaltered H L L H During the data portion of a write sequence CY7C1310BV18 only the upper nibble D 7 4 is written into the device D 3 0 remains unaltered CY...

Page 11: ...into the device D 35 9 remains unaltered L H H H L H During the data portion of a write sequence only the lower byte D 8 0 is written into the device D 35 9 remains unaltered H L H H L H During the da...

Page 12: ...edge of TCK Instruction Register Three bit instructions can be serially loaded into the instruction register This register is loaded when it is placed between the TDI and TDO pins as shown in TAP Con...

Page 13: ...scan register After the data is captured it is possible to shift out the data by putting the TAP into the Shift DR state This places the boundary scan register between the TDI and TDO pins PRELOAD pl...

Page 14: ...oller follows 9 TEST LOGIC RESET TEST LOGIC IDLE SELECT DR SCAN CAPTURE DR SHIFT DR EXIT1 DR PAUSE DR EXIT2 DR UPDATE DR 1 0 1 1 0 1 0 1 0 0 0 1 1 1 0 1 0 1 0 0 0 1 0 1 1 0 1 0 0 1 1 0 SELECT IR SCAN...

Page 15: ...GH Voltage 0 65VDD VDD 0 3 V VIL Input LOW Voltage 0 3 0 35VDD V IX Input and Output Load Current GND VI VDD 5 5 A 0 0 1 2 29 30 31 Boundary Scan Register Identification Register 0 1 2 106 0 1 2 Instr...

Page 16: ...IH TDI Hold after Clock Rise 5 ns tCH Capture Hold after Clock Rise 5 ns Output Times tTDOV TCK Clock LOW to TDO Valid 10 ns tTDOX TCK Clock LOW to TDO Invalid 0 ns TAP Timing and Test Conditions Figu...

Page 17: ...ruction Codes Instruction Code Description EXTEST 000 Captures the input and output ring contents IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO T...

Page 18: ...7 2K 7 8P 34 11E 61 4B 88 1K 8 9R 35 10E 62 3A 89 2L 9 11P 36 10D 63 1H 90 3L 10 10P 37 9E 64 1A 91 1M 11 10N 38 10C 65 2B 92 1L 12 9P 39 11D 66 3B 93 3N 13 10M 40 9C 67 1C 94 3M 14 11N 41 9D 68 1B 95...

Page 19: ...K K for 1024 cycles to lock the DLL DLL Constraints DLL uses K clock as its synchronizing input The input must have low phase jitter which is specified as tKC Var The DLL functions at frequencies dow...

Page 20: ...HIGH Voltage Note 16 VDDQ 2 0 12 VDDQ 2 0 12 V VOL Output LOW Voltage Note 17 VDDQ 2 0 12 VDDQ 2 0 12 V VOH LOW Output HIGH Voltage IOH 0 1 mA Nominal Impedance VDDQ 0 2 VDDQ V VOL LOW Output LOW Volt...

Page 21: ...00 x36 450 200 MHz x8 380 mA x9 380 x18 380 x36 400 167 MHz x8 360 mA x9 360 x18 360 x36 370 AC Electrical Characteristics Over the Operating Range 11 Parameter Description Test Conditions Min Typ Max...

Page 22: ...tion to Ambient Test conditions follow standard test methods and procedures for measuring thermal impedance in accordance with EIA JESD51 18 7 C W JC Thermal Resistance Junction to Case 4 5 C W Figure...

Page 23: ...n Single Clock Mode to Data Valid 0 45 0 45 0 50 ns tDOH tCHQX Data Output Hold after Output C C Clock Rise Active to Active 0 45 0 45 0 50 ns tCCQO tCHCQV C C Clock Rise to Echo Clock Valid 0 45 0 45...

Page 24: ...D50 D51 D61 D31 D11 D10 D60 Q C C DON T CARE UNDEFINED t CQ CQ tKHCH tCO tKHCH tCLZ CHZ tKH tKL Q00 Q01 Q20 tKHKH tCYC Q21 Q40 Q41 tCQD tDOH tCCQO tCQOH tCCQO tCQOH tCQDOH Notes 26 Q00 refers to outp...

Page 25: ...Fine Pitch Ball Grid Array 13 x 15 x 1 4 mm Industrial CY7C1910BV18 250BZI CY7C1312BV18 250BZI CY7C1314BV18 250BZI CY7C1310BV18 250BZXI 51 85180 165 Ball Fine Pitch Ball Grid Array 13 x 15 x 1 4 mm Pb...

Page 26: ...8 167BZXC CY7C1310BV18 167BZI 51 85180 165 Ball Fine Pitch Ball Grid Array 13 x 15 x 1 4 mm Industrial CY7C1910BV18 167BZI CY7C1312BV18 167BZI CY7C1314BV18 167BZI CY7C1310BV18 167BZXI 51 85180 165 Bal...

Page 27: ...0 05 M C B A 0 15 4X 0 35 0 06 SEATING PLANE 0 53 0 05 0 25 C 0 15 C PIN 1 CORNER TOP VIEW BOTTOM VIEW 2 3 4 5 6 7 8 9 10 10 00 14 00 B C D E F G H J K L M N 11 11 10 9 8 6 7 5 4 3 2 1 P R P R K M N L...

Page 28: ...page 18 Replaced Three state with Tri state Changed the description of IX from Input Load Current to Input Leakage Current on page 13 Modified the IDD and ISB values Modified test condition in Footno...

Page 29: ...thout the express written permission of Cypress Disclaimer CYPRESS MAKES NO WARRANTY OF ANY KIND EXPRESS OR IMPLIED WITH REGARD TO THIS MATERIAL INCLUDING BUT NOT LIMITED TO THE IMPLIED WARRANTIES OF...

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