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CY7C1310AV18

CY7C1312AV18

CY7C1314AV18

 PRELIMINARY

Document #: 38-05497 Rev. *A

Page 4 of 21

Pin Definitions 

Pin Name

I/O

Pin Description

D

[x:0]

Input-

Synchronous

Data input signals, sampled on the rising edge of K and K clocks during valid write 

operations

CY7C1310AV18 - D

[7:0]

CY7C1312AV18 - D

[17:0]

CY7C1314AV18 - D

[35:0]

WPS

Input-

Synchronous

Write Port Select, active LOW

. Sampled on the rising edge of the K clock. When 

asserted active, a write operation is initiated. Deasserting will deselect the Write port. 

Deselecting the Write port will cause D

[x:0]

 to be ignored.

BWS

0

, BWS

1

BWS

2

, BWS

3

Input-

Synchronous

Byte Write Select 0, 1, 2 and 3 

 active LOW

. Sampled on the rising edge of the K and 

K clocks during write operations. Used to select which byte is written into the device 

during the current portion of the write operations. Bytes not written remain unaltered.

CY7C1310AV18 

− 

BWS

0

 controls D

[3:0] 

and BWS

1

 controls D

[7:4]

.

CY7C1312AV18

 −

 BWS

0

 controls D

[8:0]

 and BWS

1

 controls D

[17:9].

CY7C1314AV18

 −

 BWS

0

 controls D

[8:0]

, BWS

1

 controls D

[17:9]

, BWS

2

 controls D

[26:18]

 

and BWS

3

 controls D

[35:27].

All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte 

Write Select will cause the corresponding byte of data to be ignored and not written into 

the device.

A

Input-

Synchronous

Address Inputs.

 Sampled on the rising edge of the K (read address) and K (write 

address) clocks during active read and write operations. These address inputs are multi-

plexed for both Read and Write operations. Internally, the device is organized as 2M x 8 

(2 arrays each of 1M x 8) for CY7C1310AV18, 1M x 18 (2 arrays each of 512K x 18) for 

CY7C1312AV18 and 512K x 36 (2 arrays each of 256K x 36) for CY7C1314AV18. 

Therefore, only 20 address inputs are needed to access the entire memory array of 

CY7C1310AV18, 19 address inputs for CY7C1312AV18 and 18 address inputs for 

CY7C1314AV18. These inputs are ignored when the appropriate port is deselected. 

Pin Configurations 

 (continued)

2

3

4

5

6

7

1

A
B
C
D
E

F

G

H

J

K

L

M

N
P
R

A

CQ

Q27
D27
D28

D34

DOFF

Q33

V

SS

/288M NC/72M

BWS

2

K

WPS

BWS

1

Q18

D18

Q30

D31

D33

TDO

Q28

D29

D22

D32

Q34 

Q31

TCK

D35

D19

BWS

3

K

BWS

0

V

SS

A

A

A

Q19

V

SS

V

SS

V

SS

V

SS

V

DD

A

V

SS

V

SS

V

SS

V

DD

Q20
D21

V

DDQ

D23
Q23

D25
Q25
Q26

A

V

DDQ

V

SS

V

DDQ

V

DD

V

DD

Q22

V

DDQ

V

DD

V

DDQ

V

DD

V

DDQ

V

DD

V

SS

V

DD

V

DDQ

V

DDQ

V

SS

V

SS

V

SS

V

SS

A

A

C

V

SS

A

A

D20

V

SS

Q29

V

SS

Q21

D30

V

REF

V

SS

V

DD

V

SS

V

SS

A

V

SS

C

Q32

Q24

Q35

D26

D24

V

DD

A

8

9

10

11

Q0

NC/36M V

SS

/144M

RPS

CQ

A D17

Q17

Q8

V

SS

D16

Q7

D8

Q16

V

SS

D15

Q6

D5

D9

Q14

V

REF

Q11

Q3

V

DDQ

Q15

V

DDQ

D14

Q5

V

DDQ

VDDQ

V

DDQ

D4

V

DDQ

D12

Q4

Q12

V

DDQ

V

DDQ

D11

V

SS

D10

D2

Q10

TDI

TMS

V

SS

A

Q9

A

D7

D6

D13

ZQ

D3

Q2

D1

Q1

D0

Q13

A

CY7C1314AV18 (512k × 36) – 11 × 15 BGA

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Summary of Contents for CY7C1310AV18

Page 1: ...ead operations and the Write Port has dedicated Data Inputs to support Write opera tions QDR II architecture has separate data inputs and data outputs to completely eliminate the need to turn around t...

Page 2: ...ata Reg RPS WPS Q 17 0 Control Logic Address Register Reg Reg Reg 18 19 18 36 18 BWS 1 0 VREF Write Add Decode 18 A 18 0 19 C C 18 512K x 18 Array 512K x 18 Array Write Reg Write Reg CQ CQ 18 DOFF Log...

Page 3: ...VREF NC NC VDDQ NC VDDQ NC NC VDDQ VDDQ VDDQ D1 VDDQ NC Q1 NC VDDQ VDDQ NC VSS NC D0 NC TDI TMS VSS A NC A NC D2 NC ZQ NC Q0 NC NC NC NC A CY7C1312AV18 1M 18 11 15 BGA 2 3 4 5 6 7 1 A B C D E F G H J...

Page 4: ...tten into the device A Input Synchronous Address Inputs Sampled on the rising edge of the K read address and K write address clocks during active read and write operations These address inputs are mul...

Page 5: ...to drive out data through Q x 0 when in single clock mode CQ Echo Clock CQ is referenced with respect to C This is a free running clock and is synchronized to the output clock C of the QDR II In the s...

Page 6: ...on of wait states in a depth expanded memory Write Operations Write operations are initiated by asserting WPS active at the rising edge of the Positive Input Clock K On the same K clock rise the data...

Page 7: ...et by slowing the cycle time of input clocks K and K to greater than 30 ns Application Example 1 Truth Table 2 3 4 5 6 7 Operation K RPS WPS DQ DQ Write Cycle Load address on the rising edge of K cloc...

Page 8: ...es during this portion of a write operation H H L H No data is written into the devices during this portion of a write operation Write Cycle Descriptions CY7C1314AV18 2 8 BWS0 BWS1 BWS2 BWS3 K K Comme...

Page 9: ...t LOW Voltage 12 13 0 3 VREF 0 1 V VIN Clock Input Voltage 0 3 VDDQ 0 3 V IX Input Load Current GND VI VDDQ 5 5 A IOZ Output Leakage Current GND VI VDDQ Output Disabled 5 5 A VREF InputReferenceVoltag...

Page 10: ...tCQOH tCHCQX Echo Clock Hold after C C Clock Rise 0 50 0 50 ns tCQD tCQHQV Echo Clock High to Data Valid 0 40 0 40 ns tCQDOH tCQHQX Echo Clock High to Data Invalid 0 40 0 40 ns tCHZ tCHZ Clock C and C...

Page 11: ...CCLK Clock Input Capacitance 6 pF CO Output Capacitance 7 pF AC Test Loads and Waveforms Note 20 Tested initially and after any design or process change that may affect these parameters 1 25V 0 25V R...

Page 12: ...if address A2 A1 then data Q20 D10 and Q21 D11 Write data is forwarded immediately as read results This note applies to the whole diagram Read Write Deselect Sequence K 1 2 3 4 5 8 10 6 7 K RPS WPS A...

Page 13: ...is placed between the TDI and TDO pins as shown in TAP Controller Block Diagram Upon power up the instruction register is loaded with the IDCODE instruction It is also loaded with the IDCODE instruct...

Page 14: ...ter between the TDI and TDO pins PRELOAD allows an initial data pattern to be placed at the latched parallel outputs of the boundary scan register cells pri or to the selection of another boundary sca...

Page 15: ...ents the value at TMS at the rising edge of TCK TAP Controller State Diagram 24 TEST LOGIC RESET TEST LOGIC IDLE SELECT DR SCAN CAPTURE DR SHIFT DR EXIT1 DR PAUSE DR EXIT2 DR UPDATE DR SELECT IR SCAN...

Page 16: ...tage IOL 2 0 mA 0 4 V VOL2 Output LOW Voltage IOL 100 A 0 2 V VIH Input HIGH Voltage 0 65VDD VDD 0 3 V VIL Input LOW Voltage 0 3 0 35VDD V IX Input and OutputLoad Current GND VI VDD 5 5 A Note 25 Thes...

Page 17: ...imes tTMSH TMS Hold after TCK Clock Rise 10 ns tTDIH TDI Hold after Clock Rise 10 ns tCH Capture Hold after Clock Rise 10 ns Output Times tTDOV TCK Clock LOW to TDO Valid 20 ns tTDOX TCK Clock LOW to...

Page 18: ...dor ID code and places the register between TDI and TDO This operation does not affect SRAM operation SAMPLE Z 010 Captures the Input Output contents Places the boundary scan register between TDI and...

Page 19: ...1 6C 52 8A 53 7A 54 7B 55 6B 56 6A 57 5B 58 5A 59 4A 60 5C 61 4B 62 3A 63 1H 64 1A 65 2B 66 3B 67 1C 68 1B 69 3D 70 3C 71 1D 72 2C 73 3E Boundary Scan Order continued Bit Bump ID 74 2D 75 2E 76 1E 77...

Page 20: ...names mentioned in this document are the trademarks of their respective holders Ordering Information Speed MHz Ordering Code Package Name Package Type Operating Range 167 CY7C1310AV18 167BZC BB165D 13...

Page 21: ...nt History Page Document Title CY7C1310AV18 CY7C1312AV18 CY7C1314AV18 18 Mb QDR II SRAM 2 Word Burst Architecture Document Number 38 05497 REV ECN No Issue Date Orig of Change Description of Change 20...

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