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Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document #: 38-05473  Rev. *E

 Revised July 17, 2008

CY7C1041DV33

4 Mbit (256K x 16) Static RAM

Features

Pin and function compatible with CY7C1041CV33

High speed

t

AA

 = 10 ns 

Low active power

I

CC

 = 90 mA at 10 ns (industrial)

Low CMOS standby power

I

SB2

 = 10 mA 

2.0V data retention

Automatic power down when deselected

TTL compatible inputs and outputs

Easy memory expansion with CE and OE features

Available in Pb-free 48-ball VFBGA, 44-pin (400-mil) molded 
SOJ, and 44-pin TSOP II packages

Functional Description

The CY7C1041DV33

[1]

 is a high performance CMOS Static RAM

organized as 256K words by 16 bits. To write to the device, take
Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte
LOW Enable (BLE) is LOW, then data from IO pins (IO

to IO

7

)

is written into the location specified on the address pins (A

0

 to

A

17

). If Byte HIGH Enable (BHE) is LOW, then data from IO pins

(IO

8

 to IO

15

) is written into the location specified on the address

pins (A

0

 to A

17

).

To read from the device, take Chip Enable (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If
BLE is LOW, then data from the memory location specified by
the address pins appears on IO

0

 to IO

7

. If BHE is LOW, then data

from memory appears on IO

8

 to IO

15

. See the 

Truth Table

 on

page 9 for a complete description of read and write modes.

The input and output pins (IO

0

 to IO

15

) are placed in a high

impedance state when the device is deselected (CE HIGH),
outputs are disabled (OE HIGH), BHE and BLE are disabled
(BHE, BLE HIGH), or during a write operation (CE LOW and WE
LOW).

The CY7C1041DV33 is available in a standard 44-pin 400-mil
wide SOJ and 44-pin TSOP II package with center power and
ground (revolutionary) pinout and a 48-ball fine-pitch ball grid
array (FBGA) package.

14

15

A

1

A

2

A

3

A

4

A

5

A

6

A

7

A

8

COLUMN

DECODER

RO

W DE

CO

DE

R

S

E

N

SE AM

PS

INPUT BUFFER

256K × 16

A

0

A

11

A

13

A

12

A

A

A

16

A

17

A

9

A

10

IO

0

–IO

7

OE

IO

8

–IO

15

CE

WE

BLE

BHE

Logic Block Diagram

Note

1. For guidelines on SRAM system design, refer to the “System Design Guidelines” Cypress application note, available at www.cypress.com.

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Summary of Contents for CY7C1041DV33

Page 1: ...he location specified on the address pins A0 to A17 To read from the device take Chip Enable CE and Output Enable OE LOW while forcing the Write Enable WE HIGH If BLE is LOW then data from the memory...

Page 2: ...9 IO10 IO11 IO12 IO13 IO14 IO15 VCC VCC VSS VSS NC 10 A5 WE VCC A11 A10 NC A6 A0 A3 CE IO2 IO 0 IO1 A4 A5 IO3 IO5 IO4 IO6 IO7 VSS A9 A8 OE VSS A7 IO8 BHE NC A17 A2 A1 BLE VCC IO9 IO10 IO11 IO12 IO13 I...

Page 3: ...Characteristics Over the Operating Range Parameter Description Test Conditions 10 Industrial 12 Automotive Unit Min Max Min Max VOH Output HIGH Voltage VCC Min IOH 4 0 mA 2 4 2 4 V VOL Output LOW Vol...

Page 4: ...on to Case 14 74 36 73 17 17 C W AC Test Loads and Waveforms The AC test loads and waveform diagram follows 7 90 10 3 0V GND 90 10 ALL INPUT PULSES CAPACITIVE LOAD CONSISTS OF ALL COMPONENTS OF THE TE...

Page 5: ...te End 7 8 ns tHA Address Hold from Write End 0 0 ns tSA Address Setup to Write Start 0 0 ns tPWE WE Pulse Width 7 8 ns tSD Data Setup to Write End 5 6 ns tHD Data Hold from Write End 0 0 ns tLZWE WE...

Page 6: ...ATA VALID DATA VALID tRC tAA tOHA ADDRESS DATA OUT Notes 12 The internal write time of the memory is defined by the overlap of CE LOW and WE LOW CE and WE must be LOW to initiate a write and the trans...

Page 7: ...DANCE tHZOE tHZBE tPD HIGH OE CE ICC ISB IMPEDANCE ADDRESS DATA OUT VCC SUPPLY tDBE tLZBE tHZCE BHE BLE CURRENT ICC ISB tHD tSD tSCE tSA tHA tAW tPWE tWC BW DATAIO ADDRESS CE WE BHE BLE t Notes 18 Add...

Page 8: ...OE HIGH During Write 19 20 Switching Waveforms continued tHD tSD tBW tSA tHA tAW tPWE tWC tSCE DATAIO ADDRESS BHE BLE WE CE tHD t SD tPWE tSA tHA tAW tSCE tWC t HZOE DATAIN VALID CE ADDRESS WE DATA I...

Page 9: ...a Out High Z Read Lower Bits Only Active ICC L L H H L High Z Data Out Read Upper Bits Only Active ICC L X L L L Data In Data In Write All Bits Active ICC L X L L H Data In High Z Write Lower Bits Onl...

Page 10: ...12BVXE 51 85150 48 Ball VFBGA Pb Free Automotive CY7C1041DV33 12VXE 51 85082 44 Pin 400 mil Molded SOJ Pb Free CY7C1041DV33 12ZSXE 51 85087 44 Pin TSOP II Pb Free Please contact your local Cypress sa...

Page 11: ...CY7C1041DV33 Document 38 05473 Rev E Page 11 of 13 Figure 11 44 Pin 400 mil Molded SOJ 51 85082 Figure 12 44 Pin TSOP II 51 85087 Package Diagrams continued 51 85082 B 51 85087 A Feedback Feedback...

Page 12: ...e 4 on AC Test Loads Changed reference voltage level for measurement of Hi Z parameters from 500 mV to 200 mV Added Data Retention Characteristics Waveform and footnote 11 12 Added Write Cycle WE Cont...

Page 13: ...n of this Source Code except as specified above is prohibited without the express written permission of Cypress Disclaimer CYPRESS MAKES NO WARRANTY OF ANY KIND EXPRESS OR IMPLIED WITH REGARD TO THIS...

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