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CY62167EV30 MoBL

®

Document #: 38-05446 Rev. *E

Page 5 of 14

Switching Characteristics 

Over the Operating Range

[14, 15]

 

Parameter

Description

45 ns (Industrial/Auto-A)

Unit

Min

Max

READ CYCLE

t

RC

Read Cycle Time

45

ns

t

AA

Address to Data Valid

45

ns

t

OHA

Data Hold from Address Change

10

ns

t

ACE

CE

1

 LOW and CE

HIGH to Data Valid

45

ns

t

DOE

OE LOW to Data Valid

22

ns

t

LZOE

OE LOW to LOW Z

[16]

5

ns

t

HZOE

OE HIGH to High Z

[16, 17]

18

ns

t

LZCE

CE

1

 LOW and CE

HIGH to Low Z

[16]

10

ns

t

HZCE

CE

1

 HIGH and CE

LOW to High Z

[16, 17]

18

ns

t

PU

CE

1

 LOW and CE

HIGH to Power Up

0

ns

t

PD

CE

1

 HIGH and CE

LOW to Power Down

45

ns

t

DBE

BLE / BHE LOW to Data Valid

45

ns

t

LZBE

BLE / BHE LOW to Low Z

[16]

10

ns

t

HZBE

BLE / BHE HIGH to HIGH Z

[16, 17]

18

ns

WRITE CYCLE

[18]

t

WC

Write Cycle Time

45

ns

t

SCE

CE

1

 LOW and CE

HIGH

 

to Write End

35

ns

t

AW

Address Setup to Write End

35

ns

t

HA

Address Hold from Write End

0

ns

t

SA

Address Setup to Write Start

0

ns

t

PWE

WE Pulse Width

35

ns

t

BW

BLE / BHE LOW to Write End

35

ns

t

SD

Data Setup to Write End

25

ns

t

HD

Data Hold from Write End

0

ns

t

HZWE

WE LOW to High-Z

[16, 17]

18

ns

t

LZWE

WE HIGH to Low-Z

[16]

10

ns

Notes

14. Test conditions for all parameters other than tri-state parameters assume signal transition time of 1 V/ns, timing reference levels of V

CC

(typ)/2, input pulse levels of 0 

to V

CC

(typ), and output loading of the specified I

OL

/I

OH

 as shown in 

“AC Test Loads and Waveforms” on page 4

.

15. AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. See 

application note AN13842

 for further clarification.

16. At any temperature and voltage condition, t

HZCE

 is less than t

LZCE

, t

HZBE

 is less than t

LZBE

, t

HZOE

 is less than t

LZOE

, and t

HZWE

 is less than t

LZWE

 for any device.

17. t

HZOE

, t

HZCE

, t

HZBE

, and t

HZWE

 transitions are measured when the outputs enter a high impedance state.

18. The internal write time of the memory is defined by the overlap of WE, CE

= V

IL

, BHE or BLE or both = V

IL

, and CE

= V

IH

. All signals must be ACTIVE to initiate a 

write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must refer to the edge of the signal that terminates the write.

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Summary of Contents for CY62167EV30

Page 1: ...HIGH The input and output pins I O0 through I O15 are placed in a high impedance state when the device is deselected CE1 HIGH or CE2 LOW outputs are disabled OE HIGH both Byte High Enable and Byte Lo...

Page 2: ...21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE CE2 NC BHE BLE A18 A17 A7 A6 A5 A4 A3 A2 A1 A16 BYTE Vss IO15 A20 IO7 IO14...

Page 3: ...package 0 3 0 7 9 V IIX Input Leakage Current GND VI VCC 1 1 A IOZ Output Leakage Current GND VO VCC Output Disabled 1 1 A ICC VCC Operating Supply Current f fMAX 1 tRC VCC VCC max IOUT 0 mA CMOS leve...

Page 4: ...V ICCDR 10 Data Retention Current VCC 1 5V to 3 0V CE1 VCC 0 2V CE2 0 2V VIN VCC 0 2V or VIN 0 2V Industrial Auto A 45ZXI TSOP I 8 A VCC 1 5V CE1 VCC 0 2V CE2 0 2V VIN VCC 0 2V or VIN 0 2V Industrial...

Page 5: ...tSD Data Setup to Write End 25 ns tHD Data Hold from Write End 0 ns tHZWE WE LOW to High Z 16 17 18 ns tLZWE WE HIGH to Low Z 16 10 ns Notes 14 Test conditions for all parameters other than tri state...

Page 6: ...PREVIOUS DATA VALID DATA VALID RC tAA tOHA tRC ADDRESS DATA OUT 50 50 DATA VALID tRC tACE tDOE tLZOE tLZCE tPU HIGH IMPEDANCE tHZOE tPD tHZBE tLZBE tHZCE tDBE OE CE1 ADDRESS CE2 BHE BLE DATA OUT VCC S...

Page 7: ...rms continued tHD tSD tPWE tSA tHA tAW tSCE tWC tHZOE VALID DATA tBW NOTE 24 CE1 ADDRESS CE2 WE DATA I O OE BHE BLE Notes 22 Data IO is high impedance if OE VIH 23 If CE1 goes HIGH and CE2 goes LOW si...

Page 8: ...le No 2 Figure 9 shows WE controlled OE LOW write cycle waveforms 23 Figure 9 Write Cycle No 3 Switching Waveforms continued tHD tSD tPWE tHA tAW tSCE tWC tHZOE VALID DATA tBW tSA NOTE 24 CE1 ADDRESS...

Page 9: ...Read Active ICC L H H L H L Data Out I O0 I O7 High Z I O8 I O15 Read Active ICC L H H L L H High Z I O0 I O7 Data Out I O8 I O15 Read Active ICC L H H H L H High Z Output Disabled Active ICC L H H H...

Page 10: ...62167EV30LL 45BVXI 51 85150 48 ball VFBGA 6 x 8 x 1 mm Pb free CY62167EV30LL 45ZXI 51 85183 48 pin TSOP I Pb free CY62167EV30LL 45ZXA 51 85183 48 pin TSOP I Pb free Automotive A Shaded areas contain p...

Page 11: ...continued A 1 A1 CORNER 0 75 0 75 0 30 0 05 48X 0 25 M C A B 0 05 M C B A 0 15 4X 0 21 0 05 1 00 MAX C SEATING PLANE 0 55 MAX 0 25 C 0 10 C A1 CORNER TOP VIEW BOTTOM VIEW 2 3 4 3 75 5 25 B C D E F G H...

Page 12: ...ge Diagrams continued 1 N 0 020 0 50 0 007 0 17 0 037 0 95 0 002 0 05 0 5 MAX 0 028 0 70 0 010 0 25 0 004 0 10 0 011 0 27 0 041 1 05 0 047 1 20 0 472 12 00 0 724 18 40 0 787 20 00 0 006 0 15 TYP 0 020...

Page 13: ...Changed tLZOE from 3 ns to 5 ns Changed tHZOE tHZCE tHZBE and tHZWE from 15 ns to 18 ns Changed tSCE tAW and tBW from 40 ns to 35 ns Changed tPE from 30 ns to 35 ns Changed tSD from 20 ns to 25 ns Up...

Page 14: ...firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement Any reproduction modification translation compilation...

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