Cypress Semiconductor CY62158E, Specification Sheet

Page: 4 / 10

CY62158E MoBL
®
Document #: 38-05684 Rev. *D Page 4 of 10
Figure 2. AC Test Loads and Waveforms
Parameters 5.0V Unit
R1 1838
Ω
R2 994
Ω
R
TH
645
Ω
V
TH
1.75 V
Data Retention Characteristics
Over the Operating Range
Parameter Description Conditions Min Typ
[2]
Max Unit
V
DR
V
CC
for Data Retention 2 V
I
CCDR
[6]
Data Retention Current V
CC
= V
DR
CE
1
> V
CC
−
0.2V, CE
2
< 0.2V,
V
IN
> V
CC
−
0.2V or V
IN
< 0.2V
8
μ
A
t
CDR
[7]
Chip Deselect to Data
Retention Time 0 ns
t
R
[8]
Operation Recovery Time t
RC
ns
Figure 3. Data Retention Waveform
3V
V
CC
OUTPUT
R2
100 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT V
Equivalent to: THÉVENIN EQUIVALENT
ALL INPUT PULSES
R
TH
R1
Notes
7. Tested initially and after any design or process changes that may affect these parameters.
8. Full device operation requires linear V
CC
ramp from V
DR
to V
CC
(min) > 100
μ
s or stable at V
CC
(min) > 100
μ
s.
V
CC
(min)
V
CC
(min)
t
CDR
V
DR
> 2.0 V
DATA RETENTION MODE
t
R
CE
1
V
CC
CE
2
or
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