Cypress Semiconductor CY62158E, Specification Sheet

Page: 3 / 10

CY62158E MoBL
®
Document #: 38-05684 Rev. *D Page 3 of 10
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature .................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage to Ground Potential –0.5V to V
CC(max)
+ 0.5V
DC Voltage Applied to Outputs
in High-Z State
[3, 4]
........................–0.5V to V
CC(max)
+ 0.5V
DC Input Voltage
[3, 4]
.....................–0.5V to V
CC(max)
+ 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage............................................ >2001V
(MIL-STD-883, Method 3015)
Latch up Current...................................................... >200 mA
Operating Range
Device Range
Ambient
Temperature
V
CC
[5]
CY62158ELL Industrial –40°C to +85°C 4.5V – 5.5V
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions
-45
Unit Min Typ
[2]
Max
V
OH
Output HIGH Voltage I
OH
= –1 mA 2.4 V
V
OL
Output LOW Voltage I
OL
= 2.1 mA 0.4 V
V
IH
Input HIGH Voltage V
CC
= 4.5V to 5.5V 2.2 V
CC
+ 0.5V V
V
IIL
Input LOW Voltage V
CC
= 4.5V to 5.5V –0.5 0.8 V
I
IX
Input Leakage Current GND < V
I
< V
CC
–1 +1
μ
A
I
OZ
Output Leakage Current GND < V
O
< V
CC
, Output Disabled –1 +1
μ
A
I
CC
V
CC
Operating Supply
Current
f = f
MAX
= 1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
18 25 mA
f = 1 MHz 1.8 3 mA
I
SB1
Automatic CE Power down
Current — CMOS Inputs CE
1
> V
CC
−
0.2V, CE
2
< 0.2V
V
IN
> V
CC
– 0.2V, V
IN
< 0.2V)
f = f
MAX
(Address and Data Only),
f = 0 (OE, and WE), V
CC
= V
CCmax
2 8
μ
A
I
SB2
[6]
Automatic CE Power-down
Current — CMOS Inputs CE
1
> V
CC
– 0.2V or CE
2
< 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= V
CCmax
2 8
μ
A
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter Description Test Conditions Max Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
10 pF
C
OUT
Output Capacitance 10 pF
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter Description Test Conditions TSOP II Unit
Θ
JA
Thermal Resistance
(Junction to Ambient) Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board 75.13
°
C/W
Θ
JC
Thermal Resistance
(Junction to Case) 8.95
°
C/W
Notes
3. V
IL
(min) = –2.0V for pulse durations less than 20 ns.
4. V
IH
(max) = V
CC
+ 0.75V for pulse durations less than 20 ns.
5. Full Device AC operation assumes a 100
μ
s ramp time from 0 to V
CC
(min) and 200
μ
s wait time after V
CC
stabilization.
6. Only chip enables (CE
1
and CE
2
), must be tied to CMOS levels to meet the I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
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