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CY62146EV30 MoBL

®

Document #: 38-05567 Rev. *C

Page 12 of 12

Document History Page

Document Title:CY62146EV30 MoBL

®

, 4-Mbit (256K x 16) Static RAM

Document Number: 38-05567

REV.

ECN NO. Issue Date

Orig. of 

Change

Description of Change

**

223225

See ECN

AJU

New Data Sheet

*A

247373

See ECN

SYT

Changed Advance Information to Preliminary

Moved Product Portfolio to Page 2

Changed V

CC

 stabilization time in footnote #8 from 100 

µ

s to 200 

µ

s

Removed Footnote #14(t

LZBE

) from Previous revision

Changed I

CCDR

 from 2.0 

µ

A to 2.5 

µ

A

Changed typo in Data Retention Characteristics(t

R

) from 100 

µ

s to t

RC 

ns

Changed t

OHA

 from 6 ns to 10 ns for both 35 ns and 45 ns Speed Bin

Changed t

HZOE

, t

HZBE

, t

HZWE

 from 12 to 15 ns for 35 ns Speed Bin and 15 to 

18 ns for 45 ns Speed Bin

Changed t

SCE

 and t

BW

 from 25 to 30 ns for 35 ns Speed Bin and 40 to 35 ns 

for 45 ns Speed Bin

Changed t

HZCE

 from 12 to 18 ns for 35 ns Speed Bin and 15 to 22 ns for 45 

ns Speed Bin

Changed t

SD

 from 15 to 18 ns for 35 ns Speed Bin and 20 to 22 ns for 

45 ns Speed Bin

Changed t

DOE

 from 15 to 18 ns for 35 ns Speed Bin

Changed t

DBE

 from 15 to 18 ns for 35 ns Speed Bin

Changed Ordering Information to include Pb-Free Packages

*B

414807

See ECN

ZSD

Changed from Preliminary information to Final

Changed the address of Cypress Semiconductor Corporation on Page #1 

from “3901 North First Street” to “198 Champion Court”

Removed 35ns Speed Bin

Removed “L” version of CY62146EV30

Changed ball E3 from DNU to NC

Removed the redundant foot note on DNU.

Changed I

CC

 (Max) value from 2 mA to 2.5 mA and I

CC

 (Typ) value from 

1.5 mA to 2 mA at f=1 MHz

Changed I

CC

 (Typ) value from 12 mA to 15 mA at f = f

max

Changed I

SB1 

and I

SB2

 Typ values from 0.7 

µ

A to 1 

µ

A and Max values from 

2.5 

µ

A to 7 

µ

A.

Changed the AC test load capacitance from 50pF to 30pF on Page# 4

Changed I

CCDR

 from 2.5 

µ

A to 7 

µ

A.

Added I

CCDR 

typical value.

Changed t

LZOE

 from 3 ns to 5 ns

Changed t

LZCE

 and t

LZWE 

from 6 ns to 10 ns

Changed t

LZBE 

from 6 ns to 5 ns

Changed t

HZCE

 from 22 ns to 18 ns

Changed t

PWE

 from 30 ns to 35 ns.

Changed t

SD

 from 22 ns to 25 ns.

Updated the package diagram 48-ball VFBGA from *B to *D

Updated the ordering information table and replaced the Package Name 

column with Package Diagram.

*C

925501

See ECN

VKN

Added footnote #8 related to I

SB2 

and

 

I

CCDR

Added footnote #12 related AC timing parameters

Summary of Contents for CY62146EV30

Page 1: ...h impedance state when Deselected CE HIGH Outputs are disabled OE HIGH Both Byte High Enable and Byte Low Enable are disabled BHE BLE HIGH Write operation is active CE LOW and WE LOW Write to the devi...

Page 2: ...22 21 23 24 A6 A7 A4 A3 A2 A1 A0 A15 A16 A8 A9 A10 A11 A13 A14 A12 OE BHE BLE CE WE IO0 IO1 IO2 IO3 IO4 IO5 IO6 IO7 IO8 IO9 IO10 IO11 IO12 IO13 IO14 IO15 VCC VCC VSS VSS NC 10 A17 48 ball VFBGA 44 pi...

Page 3: ...LOW Voltage IOL 0 1 mA 0 4 V IOL 2 1 mA VCC 2 70V 0 4 V VIH Input HIGH Voltage VCC 2 2V to 2 7V 1 8 VCC 0 3 V VCC 2 7V to 3 6V 2 2 VCC 0 3 V VIL Input LOW Voltage VCC 2 2V to 2 7V 0 3 0 6 V VCC 2 7V t...

Page 4: ...TH 1 20 1 75 V Data Retention Characteristics Over the Operating Range Parameter Description Conditions Min Typ 2 Max Unit VDR VCC for Data Retention 1 5 V ICCDR 8 Data Retention Current VCC 1 5V CE V...

Page 5: ...End 0 ns tHZWE WE LOW to High Z 13 14 18 ns tLZWE WE HIGH to Low Z 13 10 ns Notes 11 Test conditions for all parameters other than tri state parameters assume signal transition time of 3 ns 1V ns or l...

Page 6: ...DATA VALID tRC tAA tOHA ADDRESS DATA OUT 50 50 DATA VALID tRC tACE tLZBE tLZCE tPU HIGHIMPEDANCE ICC tHZOE tHZCE tPD tHZBE tLZOE tDBE tDOE IMPEDANCE HIGH ISB DATA OUT OE CE VCC SUPPLY CURRENT BHE BLE...

Page 7: ...AW tWC tHZOE DATAIN NOTE 21 tBW tSCE DATA IO ADDRESS CE WE OE BHE BLE tHD tSD tPWE tHA tAW tSCE tWC tHZOE DATAIN tBW tSA CE ADDRESS WE DATA IO OE BHE BLE NOTE 21 Notes 19 Data IO is high impedance if...

Page 8: ...lled OE LOW 20 Write Cycle No 4 BHE BLE Controlled OE LOW 20 Switching Waveforms continued DATAIN tHD tSD tLZWE tPWE tSA tHA tAW tSCE tWC tHZWE tBW NOTE 21 CE ADDRESS WE DATA IO BHE BLE tHD tSD tSA tH...

Page 9: ...gh Z Output Disabled Active ICC L H H H L High Z Output Disabled Active ICC L H H L H High Z Output Disabled Active ICC L L X L L Data In IO0 IO15 Write Active ICC L L X H L Data In IO0 IO7 IO8 IO15 i...

Page 10: ...51 85150 A 1 A1 CORNER 0 75 0 75 0 30 0 05 48X 0 25 M C A B 0 05 M C B A 0 15 4X 0 21 0 05 1 00 MAX C SEATING PLANE 0 55 MAX 0 25 C 0 10 C A1 CORNER TOP VIEW BOTTOM VIEW 2 3 4 3 75 5 25 B C D E F G H...

Page 11: ...s pursuant to an express written agreement with Cypress Furthermore Cypress does not authorize its products for use as critical components in life support systems where a malfunction or failure may re...

Page 12: ...peed Bin Changed tDBE from 15 to 18 ns for 35 ns Speed Bin Changed Ordering Information to include Pb Free Packages B 414807 See ECN ZSD Changed from Preliminary information to Final Changed the addre...

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