AT45DB321
8
DC Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Units
I
SB
Standby Current
CS, RESET, WP = V
IH
, all inputs at
CMOS levels
3
10
µA
I
CC1
Active Current, Read Operation
f = 13 MHz; I
OUT
= 0 mA;
V
CC
= 3.6V
4
10
mA
I
CC2
Active Current, Program/Erase
Operation
V
CC
= 3.6V
30
40
mA
I
LI
Input Load Current
V
IN
= CMOS levels
1
µA
I
LO
Output Leakage Current
V
I/O
= CMOS levels
1
µA
V
IL
Input Low Voltage
0.6
V
V
IH
Input High Voltage
2.0
V
V
OL
Output Low Voltage
I
OL
= 1.6 mA; V
CC
= 2.7V
0.4
V
V
OH
Output High Voltage
I
OH
= -100 µA
V
CC
- 0.2V
V
AC Characteristics
Symbol
Parameter
Min
Max
Units
f
SCK
SCK Frequency
13
MHz
t
WH
SCK High Time
35
ns
t
WL
SCK Low Time
35
ns
t
CS
Minimum CS High Time
250
ns
t
CSS
CS Setup Time
250
ns
t
CSH
CS Hold Time
250
ns
t
CSB
CS High to RDY/BUSY Low
200
ns
t
SU
Data In Setup Time
10
ns
t
H
Data In Hold Time
20
ns
t
HO
Output Hold Time
0
ns
t
DIS
Output Disable Time
25
ns
t
V
Output Valid
30
ns
t
XFR
Page to Buffer Transfer/Compare Time
350
µs
t
EP
Page Erase and Programming Time
20
ms
t
P
Page Programming Time
15
ms
t
PE
Page Erase Time
10
ms
t
BE
Block Erase Time
15
ms
t
RST
RESET Pulse Width
10
µs
t
REC
RESET Recovery Time
1
µs
Input Test Waveforms and Measurement Levels
t
R
, t
F
< 5 ns (10% to 90%)
AC
DRIVING
LEVELS
AC
MEASUREMENT
LEVEL
0.45V
2.0
0.8
2.4V
Output Test Load
DEVICE
UNDER
TEST
30 pF
