8
Atmel AVR365
8336A-AVR-03/12
Figure 4-3.
The bottom layer layout.
4.3 Bill of materials (BOM)
This section shows the BOM for the Atmel ATBM302-EK.
Table 4-1.
BOM.
Designator Description
Quantity
C1, C2, C3, C4, C5, C6, C7, C8,
C9, C10, C11, C12, C14, C15, C16,
C17, C21, C22
100nF, ceramic capacitor, SMD 0603, X7R, 50V, 10%
18
C13
2.2µF, ceramic capacitor, SMD 0603, X5R, 10V, 10%
1
C18
22nF, ceramic capacitor, SMD 0603, X7R, 50V, 10%
1
C19
1µF, ceramic capacitor, SMD 0603, X5R, 6.3V, 10%
1
C20, C23, C25, C26
10nF, ceramic capacitor, SMD 0603, X7R, 50V, 10%
4
C24
1µF, ceramic capacitor, SMD 0603, X5R, 25V, 10%
1
D1
Dual zener diode, 5.6V, 300mW, SOT23-3
1
D2
Zener diode, SMD SOD-523, 3.3V, 0.2W
1
D3
Zener diode, SMD SOD-523, 18.0V, 0.2W
1
D4, D10, D11
Schottky diode, If:200mA, Vf:0.35V, Vrrm:30V, SOD-523
3
D5, D6, D7, D8, D9
LED, red, wave length = 639nm, SMD 0805
5
D12
Schottky diode, If:200mA, Vf:0.35V, Vrrm:30V, SOD-523
1
J1
2 × 5 pin header, 2.54mm pitch, Pin-in-Paste THM
1
J2
2 × 3 pin header, 2.54mm pitch, Pin-in-Paste THM
1
Q1
N-channel. MOSFET. 20V, 5.9A continuous, 23.7A peak.
RDS(ON) = 0.037
Ω
@VGS = -4.5V,
RDS(ON) = 0.053
Ω
@VGS = -2.5V, VGS(th)<1.5V, SOT-23
1
Q2, Q3
N-MOSFET, SO-8, continuous current 16A, Vds = 30V, Vgs = 20V
2
Q4
N-channel MOSFET. 60V, 0.115A continuous, 0.8A peak.
RDS(ON) = 7.5
Ω
@VGS = 5.0V, VGS(th)<3V
1
Q7
P-channel MOSFET. -20V, -2.4A continuous, -10.0A peak.
RDS(ON) = 100m
Ω
@VGS = -1.8V,
RDS(ON) = 70m
Ω
@VGS = -2.5V, VGS(th)<1.5V
1
R1 5m
Ω
current sense resistor SMD WSK2512 4-terminal
1
R2, R3, R4, R5, R11, R14, R35
1k
Ω
thick film resistor, SMD 0603, 1/10W, 1%
7
R6, R7, R8, R9, R10, R12, R13,
R15, R16, R19, R20, R21, R42
100
Ω
thick film resistor, SMD 0603, 1/10W, 1%
13
