Digital Power Amplifier
R2S15102NP
7.
Recommended Operating condition(Table.3)
kHz
600
400
300
R=
33
kΩ
Carrier Frequency
fosc
MAX
TYP
0.8
5
25
-
-
-
V
V
V
Unit
0
2
11
MIN
STBYL
、
MUTEL
STB
Control voltage of high level
YL
、
MUTEL
VD1,VD2 pin voltage
Condition
Control voltage of low level
Supply Voltage
Parameter
VL
VH
VD
Symbol
(note)
・
STBYL: High level:normal operation
Low level:Stand-by
・
MUTEL:High level:normal operation Low level:Mute
・
The carrier frequency can be changed by the resistance at Pin#.7 .
8.
Electronic Characteristics(Table.4)
%
-
89
TBD
Po=20W
at BTL
at SE
dB
-
80
TBD
Mute Attenuation
Mute
dB
-
50
TBD
dVD=100mVrms,f=100
Hz
Ripple Rejection
Ratio
PSRR
W
-
20
TBD
THD=10%
、
VD=18V
、
RL=8
Ω
at BTL
at SE
%
-
93
TBD
Po=10+10W
Power
Efficiency
Eff
uVrm
D
s
TB
(100)
-
A-Weighted filter
Output Noise level
No
%
W/ch
-
10
TBD
THD=10%
、
VD=24V
、
RL=8
Ω
Maximum
output
power
Pomax
TBD
0.1
-
Po=1W
Total Harmonic
Distortion
THD
A
-
6
-
Output over-current
Protection Current
IPR
℃
-
120
-
Thermal Shut-dawn
Release Temperature
TRL
℃
-
150
-
Thermal Shut-dawn
Protection
Temperature
TPR
uA
10
-
-
Stand-by
mA
TBD
-
TBD
MUTE
MA
X
TYP
MIN
TBD
TBD
9.8
28
V
mA
Unit
TBD
TBD
VD under-voltage
No Signal
Condition
Detection Voltage
Circuit Current
Parameter
VDPR
IVD
Symbol
(Unless otherwise noted, Ta=25°C, VD=24V, Carrier Frequency=400kHz, f=1kHz,SE operation)
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