Yaesu FTV-901R, Инструкция по эксплуатации

Страница: 33 / 42

T R A N S I ST O R
L3 1 1
5 5 003 3 7 7 #2205 84
Q 3 0 1
2 2 3 2 1 6 6 0 Transistor 2SC 2 1 6 6
Q302 223 1 9454
"
2SC 1 945D
T R I M M E R CAPAC I T O R
TC3 0 1 3 90000 1 1 ECV- l ZW 20 x 40N 20 pF
D I O D E
TC302, 303 3 9 000009 ECV- l ZW 5 0 x 40N 5 0 pF
D 3 0 1 , 302,308 21 0900 1 1 Silicon l OD l TC304, 305 3 8 8 20080 222 2-80 8-6 1 809 80 pF
D 3 0 7 2 1 0 0 1 880 Germanium 1 S l 8 8FM
D303 - 3 06 2 1 0 1 5 5 5 0 Silicon 1 S l 5 5 5
R E LAY
RL3 0 1 700000 3 1 FBR-22 1D 0 1 2
R E S I ST O R
R 3 0 3 4 2 1 24560 Carbon Composition
Yz
GK 56 .11.
R306 4 2 1 24 1 0 1
" " " "
1 00 .11.
R 3 05
4 2 1 24 1 5 1
"
" " "
1 5 0 .11.
CO N N E CTO R
R302
4 2 1 24 2 2 1
" " " "
220 .11. 1 3 0 1 6 8000003 S0-239
R 3 0 1 , 3 04
4 2 1 244 7 1
" " " "
470 .11.
(L302, 3 0 5 )
R 3 0 8
4 1 1 4 3 1 0 2 Carbon Film l /4 S T J 1 k.11. 9 1 1 00008 Wrapping Terminal C
R 3 0 7
4 0 1 4 3 1 03
" " "
VJ 10 k.11.
8005 0 74 1
Booster Heat Sink
POT E N T I O M E T E R
VR3 0 1
49906 3 0 1 EVL-SOAAOOB 3 2 3 0 0 .11.B
VR302 49906 1 0 3 EVL-SOAAOOB 14 1 0 k.11.B
Description
CAPAC I T O R
* * * * * MA I N C H ASS I S * * * * *
C334 3 1 8 29095
Ceramic Disc 5 0WV SL 0.5 pF C5 0 1 - 5 06 ,
3 2 8 2 1 1 0 2 Ceramic Feed Thru ECK-Y l H 1 0 2WE
C3 1 6 , 3 3 5
3 1 8290 1 0
" " " "
1 pF
5 08, 509,
C3 1 0, 3 1 5 3 1 82905 0
" " " "
5 pF
5 1 1 -5 1 3 ,
C302
3 1 829200
" " " "
20 pF
5 1 5
C30 1 , 3 1 7 3 1 829330
" " " "
33 pF
C5 1 7 3 6 8 2 5 2 2 3 Mylar 5 0WV 0.022 µF
C307 3 1 829390
" " " "
39 pF
C320, 3 2 9 3 1 8 294 7 0
" " " "
47 pF
C3 2 3
3 1 829620
" " " "
62 pF
C3 1 4 , 324
3 1 829820
" "
" "
82 pF
R E S I STOR
C3 2 1 , 3 2 8 3 1 8 29 1 0 1
" " " "
100 pF
R5 0 1 4 1 1 4 3 4 7 3 Carbon Film l/4S TJ 47 k.11.
C3 1 9 3 1 829 1 2 1
" " " "
1 2 0 pF
C3 04,306,309, 30820103
" " "
0.01 µF
3 1 1 , 3 1 3 , 3 1 8,
3 2 6 , 3 2 7 , 3 3 1 ,
* * * * * 1 44 M H z CO N V E R T E R M A I N BOA R D * * * * *
3 3 3
PB- 1 9 25 6 04 1 9 25 0 Printed Circuit Board
C3 0 3 ,305 , 3 0 8 , 36 226226 Electrolytic 1 6WV
TW
22 µF 0 1 9250AZ PCB with Components
3 1 2,330,3 3 2
I C , F E T, T R A N S I ST O R
I N D UCTOR
Q60 1 25000 1 0 1 IC MC- 1 4 96G
L3 1 4
5 3 0 1 0001 Micro Inductor l Q µH Q6 1 0
25000 1 2 8
"
78L08
L3 04 , 3 1 3 5 5 00 3 1 6 0 # 220 1 96
Q60 2,605 ,6 06 23 8005 1 0 FET 3SK5 1
L302, 305 5 5 003262 # 220 3 24
Q6 04 2 2 3 0 7 3 0 0 Transistor 2SC 7 3 0
L3 0 1 5 5 0 0 3 3 7 3 #2205 2 7
Q6 0 7-609
2 2 3 0 7 84 2
"
2S(: 7 84 R
L3 0 3 , 3 0 6 5 5 00 3 3 74 # 2205 28
Q6 1 1 , 6 1 2 223 1 8 1 5 4
"
2SC 1 8 1 5 Y
L3 0 7
5 5 00 3 3 7 5
#2205 29
Q6 0 3 223 205 3 0
"
2SC 205 3
L3 0 8 - 310, 312 5 5 0 0 3 3 76 # 2205 3 0
- 31 -