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SARA-R4 series - System integration manual

UBX-16029218 - R20

Design-in

Page 72 of 128

C1-Public

lists examples of active antennas to be used with SARA-R422M8S modules.

Manufacturer

Part number

Product name Description

Tallysman

TW3400

Active antenna

–

2.5 - 16 V

GPS / SBAS / QZSS / GLONASS

Tallysman

TW3710

Active antenna, 2.5

–

16 V

GPS / SBAS / QZSS / GLONASS / Galileo / BeiDou

Taoglas

AA.162.301111

Ulysses

Ultra-Low profile miniature antenna, 1.8

–

5.5V

GPS / SBAS / QZSS / GLONASS / Galileo

Taoglas

MA310.A.LB.001

Magnet mount antenna, 1.8

–

5.5 V

GPS / SBAS / QZSS / GLONASS

Inpaq

B3G02G-S3-01-A

SMA plug active antenna, 3.3 V typical
GPS / SBAS / GLONASS

Inpaq

GPSH237N-N3-37-A

Patch circular antenna, 3.0 V typical
GPS / SBAS / QZSS

Abracon LLC

APAMP-110

Module RF antenna 5dBic SMA adhesive, 2.5

–

3.5 V

GPS / SBAS / QZSS

TE Connectivity 2195768-1

Active antenna, 3.0 V typical
GPS / SBAS / QZSS

Table 32: Examples of GNSS active antennas

2.4.4

Cellular and GNSS RF coexistence

Overview

Desensitization or receiver blocking is a form of electromagnetic interference where a radio receiver
is unable to detect a weak signal that it might otherwise be able to receive when there is no
interference (see

). Good blocking performance is particularly important in the scenarios

where a number of radios of various forms are used in close proximity to each other.

0

-120

-60

1575

Frequency [MHz]

Power [dBm]

Filter gain [dB]

1800

2025

1350

1125

GNSS signal

LTE signal

Filter response

Figure 43: Interference due to transmission in LTE B3, B4 and B66 low channels (1710 MHz) adjacent to GNSS frequency
range (1561 to 1605 MHz). Harmonics due to transmission in LTE B13 high channels (787 MHz) may fall into the GNSS bands

Jamming signals may come from in-band and out-of-band frequency sources. In-band jamming is
caused by signals with frequencies falling within the GNSS frequency range, while the out-of-band
jamming is caused by very strong signals adjacent to the GNSS frequency range so that part of the
strong signal power may leak at the input of the GNSS receiver and/or block GNSS reception.

If not properly taken into consideration, in-band and out-band jamming signals may cause a reduction
in the carrier-to-noise power density ratio (C/No) of the GNSS satellites.

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Содержание SARA-R4 Series

Страница 1: ...m integration manual Abstract This document describes the features and the integration of the size optimized SARA R4 series cellular modules These modules are a complete cost efficient performance opt...

Страница 2: ...Obsolete SARA R410M 52B 01 L0 0 00 00 06 08 A02 11 UBX 19024506 Mass production SARA R410M 52B 02 L0 0 00 00 06 11 A 02 16 UBX 20033274 Mass production SARA R410M 63B 00 L0 08 12 A 01 11 UBX 20006293...

Страница 3: ...ANT 32 1 7 2 GNSS antenna RF interface ANT_GNSS 33 1 7 3 Antenna detection interface ANT_DET 34 1 8 SIM interface 34 1 8 1 SIM interface 34 1 8 2 SIM detection interface 34 1 9 Data communication int...

Страница 4: ...rcuit design 94 2 8 2 Guidelines for general purpose input output layout design 95 2 9 GNSS peripheral input output 95 2 9 1 Guidelines for GNSS peripheral input output circuit design 95 2 9 2 Guideli...

Страница 5: ...Modifications 113 4 3 Innovation Science Economic Development Canada notice 114 4 3 1 Declaration of Conformity 114 4 3 2 Modifications 115 4 4 European Conformance CE mark 116 4 5 National Communicat...

Страница 6: ...l as devices that require long battery lifetimes such as used in smart metering smart lighting telematics asset tracking remote monitoring alarm panels and connected health Secure cloud product versio...

Страница 7: ...M 63B Japan 13 M1 1 8 19 SARA R410M 73B Korea 13 M1 3 5 26 SARA R410M 83B APAC Multi Region 13 M1 NB1 3 5 8 20 28 SARA R412M 02B Multi region 13 M1 NB1 SARA R422 00B Multi region 14 M1 NB2 SARA R422S...

Страница 8: ...B LTE Cat M1 NB1 module mainly designed for operation in LTE bands 3 5 8 20 28 SARA R412M 02B LTE Cat M1 NB1 and 2G module mainly designed for operation in LTE bands 2 3 4 5 8 12 13 20 28 and 2G 4 ban...

Страница 9: ...0 Class 1 30 dBm in 1800 1900 2G 8 PSK Class E2 27 dBm in 850 900 Class E2 26 dBm in 1800 1900 Data rate LTE category M1 up to 375 kb s UL 300 kb s DL LTE category NB19 up to 62 5 kb s UL 27 2 kb s DL...

Страница 10: ...block diagram The SARA R410M 01B modules i e the 01B product version of the SARA R410M modules do not support the following interfaces which should be left unconnected and should not be driven by ext...

Страница 11: ...es the internal architecture of SARA R422M8S modules Memory V_INT ANT VCC Supply USB DDC I2C SIM card detection SIM UARTs Power control GPIOs Antenna detection Switch PAs RF transceiver 19 2 MHz Cellu...

Страница 12: ...of the following main elements On chip modem processor vector signal processor with dedicated hardware assistance for signal processing and system timing On chip modem processor with interfaces contr...

Страница 13: ...diagnostic FW update strongly recommended See section 1 6 1 and 1 6 2 for functional description See section 2 3 1 for external circuit design in PWR_CTRL12 15 I Power on off Reset input Internal pul...

Страница 14: ...to send output 1 8 V output Circuit 106 CTS in ITU T V 24 Not supported by SARA R410M 01B SARA R410M 02B 00 See section 1 9 1 for functional description See section 2 6 1 for external circuit design i...

Страница 15: ...ata communication FOAT FW update by u blox tool diagnostics 90 nominal differential impedance Z0 30 nominal common mode impedance ZCM Pull up or pull down resistors and external series resistors as re...

Страница 16: ...line 1 8 V open drain for communication with I2C devices Internal pull up to V_INT external pull up is not required Not supported by SARA R410M 01B product version See section 1 9 5 for functional des...

Страница 17: ...19 47 O GNSS data output GNSS UART data output from internal u blox M8 chipset Test Point for diagnostic access is recommended See section 1 12 for functional description EXTINT19 46 I GNSS external i...

Страница 18: ...1 6 2 When in power off mode the modules can be switched on by the host processor using the PWR_ON PWR_CTRL input pin see 1 6 1 When in power off mode the modules enter not powered mode by removing VC...

Страница 19: ...eive the paging in between eDRX cycles according to the timing set by the network or if the host processor wakes up the module using the PWR_ON PWR_CTRL input pin see 1 6 1 The modules enter power off...

Страница 20: ...nds and according to the UMNOPROF AT command settings The PSM can last for different time periods according to the T3412 periodic TAU timer set by the network Then the modules enter the ultra low powe...

Страница 21: ...2G radio access technology provide separate supply inputs over the three VCC pins VCC pins 52 and 53 represent the supply input for the internal RF power amplifier demanding most of the total current...

Страница 22: ...CC extended operating range is not recommended and may affect device reliability VCC average current Support with adequate margin the highest averaged VCC current consumption value in connected mode c...

Страница 23: ...time during LTE Cat M1 half duplex connection 1 5 1 3 VCC current consumption in 2G connected mode When a 2G call is established the VCC consumption is determined by the current consumption profile ty...

Страница 24: ...lot unused slot MON slot unused slot GSM frame 4 61 5 ms 1frame 8 slots GSM frame 4 61 5 ms 1frame 8 slots Figure 9 Description of the VCC voltage profile versus time during a 2G single slot call 1 TX...

Страница 25: ...he CPSMS AT command see the SARA R4 series AT commands manual 2 the application development guide 4 When the use of the PSM is enabled the module automatically enters the PSM and the ultra low power d...

Страница 26: ...active mode to monitor the paging channel for the paging block reception in discontinuous reception DRX mode Detailed current consumption values can be found in the SARA R4 series data sheet 1 IDLE MO...

Страница 27: ...A RX Enabled 0 1 00 0 1 00 Figure 13 Example of VCC current consumption profile with low power mode disabled AT UPSV 0 module registered with the network active mode is held the receiver is periodical...

Страница 28: ...tate The duration of this phase differs within generic digital interfaces and USB interface due to host device enumeration timings The module is fully ready to operate after all interfaces are configu...

Страница 29: ...cedure is intended to be used in case of emergency only An abrupt under voltage shutdown occurs on SARA R4 series modules when the VCC module supply is removed If this occurs it is not possible to per...

Страница 30: ...es not occur e g applying a low level to PWR_ON PWR_CTRL input pin and it enters not powered mode if the VCC supply is removed VCC PWR_ON PWR_CTRL RESET_N V_INT Internal Reset System State BB Pads Sta...

Страница 31: ...te An abrupt hardware shutdown occurs on SARA R410M and SARA R412M modules when a low level is applied on RESET_N input pin for a valid time period In this case the current parameter settings are not...

Страница 32: ...1 6 dB VSWR 3 1 acceptable The Return loss or the S11 as the VSWR refers to the amount of reflected power measuring how well the antenna RF connection matches the 50 characteristic impedance of the AN...

Страница 33: ...QZSS Galileo 1575 MHz GLONASS 1602 MHz The required frequency range of the antenna connected to ANT_GNSS port depends on the selected GNSS constellations Return loss S11 10 dB VSWR 2 1 recommended S11...

Страница 34: ...rcuit must be implemented on the application board See section 2 4 5 for antenna detection circuit on application board and diagnostic circuit on antenna assembly design in guidelines 1 8 SIM interfac...

Страница 35: ...ON state 1 8 V for high data bit OFF state o Data lines RXD as data output TXD as data input o HW flow control lines CTS as flow control output RTS as flow control input o Modem status and control lin...

Страница 36: ...lox AT commands see the SARA R4 series AT commands manual 2 The default baud rate is 115200 b s while the default frame format is 8N1 8 data bits No parity 1 stop bit see Figure 18 Baud rates can be c...

Страница 37: ...le for FW upgrade by means of the u blox dedicated tool and for diagnostic purposes SARA R410M and SARA R412M modules provide the following USB lines the USB_D USB_D lines carrying the USB data and si...

Страница 38: ...elf by dedicated VID Vendor ID and PID Product ID combination included in the USB device descriptor following USB 2 0 specifications 6 VID 0x05C6 PID 0x90B2 1 9 3 SPI interface The SPI interface is no...

Страница 39: ...ected to the cellular module by the I2C GPIO2 GNSS data ready 31 Sense when a u blox GNSS receiver connected to the module is ready for sending data by the I2C GPIO3 SIM card detection SIM card physic...

Страница 40: ...n generate pulse trains synchronized with GPS or UTC time grid with intervals configurable over a wide frequency range Thus it may be used as a low frequency time synchronization pulse or as a high fr...

Страница 41: ...IM_RST pins Accurate design is required to guarantee SIM card functionality reducing the risk of RF coupling Carefully follow the suggestions provided in relative section 2 5 for schematic and layout...

Страница 42: ...The switching step down regulator is the typical choice when primary supply source has a nominal voltage much higher e g greater than 5 V than the operating supply voltage of SARA R4 series The use of...

Страница 43: ...is suggested when the difference from the available supply rail source to the VCC value is high since switching regulators provide good efficiency transforming a 12 V or greater voltage supply to the...

Страница 44: ...0 16 V Generic manufacturer C4 22 pF Capacitor Ceramic C0G 0402 5 25 V Generic manufacturer C5 10 nF Capacitor Ceramic X7R 0402 10 16 V Generic manufacturer C6 470 nF Capacitor Ceramic X7R 0603 10 25...

Страница 45: ...tor Ceramic X7R 50 V Generic manufacturer C2 10 nF Capacitor Ceramic X7R 16 V Generic manufacturer C3 22 nF Capacitor Ceramic X7R 16 V Generic manufacturer C4 22 F Capacitor Ceramic X5R 25 V Generic m...

Страница 46: ...R 0402 10 50 V Generic manufacturer C5 56 pF Capacitor Ceramic C0G 0402 5 50 V Generic manufacturer C6 100 F Capacitor Tantalum B_SIZE 20 6 3V 15m T520B107M006ATE015 Kemet C7 100 nF Capacitor Ceramic...

Страница 47: ...pable of delivering the highest peak pulse current specified for the 2G use case with an appropriate power handling capability The regulator described in this example supports a wide input voltage ran...

Страница 48: ...U1 EN SARA R410M 52 VCC 53 VCC 51 VCC GND C4 C3 C5 C6 Figure 24 Example of high reliability VCC supply circuit for SARA R410M using an LDO linear regulator Reference Description Part Number Manufactu...

Страница 49: ...D 1 2 4 5 3 R1 R2 U1 EN SARA R4series 52 VCC 53 VCC 51 VCC GND C2 C3 C4 C5 C6 Figure 25 Example of low cost VCC supply circuit for SARA R4 series modules using an LDO linear regulator Reference Descri...

Страница 50: ...current is not always reported in the data sheets of batteries but the maximum DC discharge current is typically almost equal to the battery capacity in Amp hours divided by 1 hour DC series resistanc...

Страница 51: ...urns R1 10 k Resistor 0 1 W Generic manufacturer U1 Single Cell Li Ion or Li Polymer Battery Charger IC MCP73833 Microchip Table 16 Suggested components for the Li Ion or Li Polymer battery charging a...

Страница 52: ...upply source for the module and starts a charging phase accordingly The MP2617H IC normally provides a supply voltage to the module regulated from the external main primary source allowing immediate s...

Страница 53: ...ttery pack with 10 k NTC Various manufacturer C1 C6 22 F Capacitor Ceramic X5R 1210 10 25 V GRM32ER61E226KE15 Murata C2 C4 C10 100 nF Capacitor Ceramic X7R 0402 10 16 V GRM155R61A104KA01 Murata C3 1 F...

Страница 54: ...IN SHDNn GND FB C7 R1 R2 L1 U1 Step up regulator D1 C8 Figure 29 VCC circuit example with separate supply for SARA R412M SARA R422 SARA R422S SARA R422M8S modules Reference Description Part Number Man...

Страница 55: ...for module current consumption figures C3 GND C2 C1 C4 SARA R4 series 52 VCC 53 VCC 51 VCC VCC supply source GND C5 U1 VOUT VIN VBIAS ON CT GND 4 V_INT 15 PWR_ON R1 R2 T1 GPIO Application processor G...

Страница 56: ...Kemet T520B107M006ATE015 for SARA R412M supporting 2G 10 F capacitor or greater for the other SARA R4 series modules that do not support 2G An additional series ferrite bead is recommended for additio...

Страница 57: ...e main DC source is a switching DC DC converter place the large capacitor close to the DC DC output and minimize VCC track length Otherwise consider using separate capacitors for DC DC converter and m...

Страница 58: ...nk This is critical during connection when the real network commands the module to transmit at maximum power correct grounding helps prevent module overheating 2 2 2 Generic digital interfaces supply...

Страница 59: ...open collector output is suitable to drive the PWR_ON PWR_CTRL input from an application processor as described in Figure 33 PWR_ON PWR_CTRL input line should not be driven high as it may cause start...

Страница 60: ...suitable to drive the RESET_N input from an application processor as described in Figure 34 RESET_N input pin should not be driven high by an external device as it may cause start up issues SARA R410M...

Страница 61: ...GNSS pads and the application board PCB must be provided implementing the following design in guidelines for the layout of the application PCB close to the ANT and ANT_GNSS pads On a multilayer board...

Страница 62: ...copper FR 4 dielectric FR 4 dielectric FR 4 dielectric 380 m 500 m 500 m Figure 36 Example of 50 coplanar waveguide transmission line design for the described 4 layer board layup 35 m 35 m 1 51 0 m L...

Страница 63: ...hing supplies and digital lines and from any sensitive circuit as USB Avoid stubs on the transmission lines Avoid signal routing in parallel to transmission lines or crossing the transmission lines on...

Страница 64: ...he active pad of U FL connector needs to have a GND keep out i e clearance a void area at least on the first inner layer to reduce parasitic capacitance to ground If an integrated antenna is used the...

Страница 65: ...ed by the connector manufacturer Integrated antennas e g PCB antennas such as patches or ceramic SMT elements o Internal integrated antennas imply physical restriction to the design of the PCB Integra...

Страница 66: ...Taoglas PA 710 A Warrior GSM WCDMA LTE SMD antenna 698 960 MHz 1710 2170 MHz 2300 2400 MHz 2490 2690 MHz 40 0 x 6 0 x 5 0 mm Taoglas PCS 26 A Havok LTE SMD dielectric antenna 617 960 MHz 1710 2690 MHz...

Страница 67: ...with cable and U FL 690 960 MHz 1710 2170 MHz 2500 2700 MHz 110 0 x 21 0 mm Table 24 Examples of internal antennas with cable and connector Table 25 lists some examples of possible external antennas M...

Страница 68: ...applications with a passive antenna If a GNSS passive antenna with high gain and good sky view is used together with a short 50 line between antenna and receiver and no jamming sources affect the GNSS...

Страница 69: ...an integrated SAW filter and LNA as illustrated in Figure 4 The addition of such external components should be carefully evaluated especially in case the application power consumption should be minim...

Страница 70: ...PS SBAS QZSS GLONASS Tallysman TW3710P Passive antenna GPS SBAS QZSS GLONASS Galileo BeiDou Taoglas CGGBP 35 3 A 02 Ceramic patch antenna GPS SBAS QZSS GLONASS Galileo BeiDou Taoglas CGGBP 18 4 A 02 E...

Страница 71: ...44 ANT_ON ESD Figure 42 Typical circuit with active antenna connected to GNSS RF interface of SARA R422M8S using an external supply Reference Description Part number Manufacturer L 120 nH wire wound R...

Страница 72: ...nterference where a radio receiver is unable to detect a weak signal that it might otherwise be able to receive when there is no interference see Figure 43 Good blocking performance is particularly im...

Страница 73: ...by the series connection of an inductor and capacitor Capacitor C1 and inductor L1 values are calculated according to the formula 1 2 For example a notch filter at 787 MHz improves the GNSS immunity t...

Страница 74: ...fully evaluated considering that the additional insertion loss of such filter may affect the cellular TRP and or TIS RF figures Table 33 lists examples of GNSS band stop SAW filters that may be consid...

Страница 75: ...5HN39NJ02 Murata C4 22 pF Capacitor Ceramic C0G 0402 5 25 V GRM1555C1H220J Murata L3 68 nH Multilayer Inductor 0402 SRF 1 GHz LQG15HS68NJ02 Murata R2 15 k Resistor for Diagnostics Various Manufacturer...

Страница 76: ...d resistor of 15 k Using the UANTR AT command the module reports the resistance value evaluated from the antenna connector provided on the application board to GND Reported values close to the used di...

Страница 77: ...described in section 2 4 2 and the recommendations of the SMA connector manufacturer DC blocking capacitor at ANT pin C2 must be placed in series to the 50 RF line The ANT_DET pin must be connected t...

Страница 78: ...for applications requiring a change of SIM card during the product lifetime A SIM card holder can have 6 or 8 positions if a mechanical card presence detector is not provided or it can have 6 2 or 8 2...

Страница 79: ...apacitance i e less than 10 pF ESD protection e g Tyco PESD0402 140 on each externally accessible SIM line close to each relative pad of the SIM connector ESD sensitivity rating of the SIM interface p...

Страница 80: ...maximum allowed rise time on data and reset lines 41 VSIM 39 SIM_IO 38 SIM_CLK 40 SIM_RST SIM CHIP SIM Chip Bottom View contacts side VPP C6 VCC C1 IO C7 CLK C3 RST C2 GND C5 C2 C3 C5 C4 2 8 3 6 7 1...

Страница 81: ...interface pins is 1 kV HBM according to JESD22 A114 so that according to the EMC ESD requirements of the custom application higher protection level can be required if the lines are externally accessib...

Страница 82: ...itive analog inputs In the second case the same harmonics can be picked up and create self interference that can reduce the sensitivity of LTE receiver channels whose carrier frequency is coincidental...

Страница 83: ...voltage translators using the module V_INT output as 1 8 V supply for the voltage translators on the module side as described in Figure 52 4 V_INT TxD Application Processor 3 0V DTE RxD RTS CTS DTR D...

Страница 84: ...output as 1 8 V supply for the voltage translators on the module side as described in Figure 54 given that the DTE will behave correctly regardless of the DSR input setting 4 V_INT TxD Application Pr...

Страница 85: ...recommended to connect the 1 8 V UART interface of the module DCE by means of appropriate unidirectional voltage translators using the module V_INT output as 1 8 V supply for the voltage translators o...

Страница 86: ...3 RXD 10 RTS 11 CTS 6 DSR 7 RI 8 DCD GND 0 TP 0 TP 0 TP TP Figure 57 UART interface application circuit with a 3 wire link in the DTE DCE serial communication 1 8V DTE If a 3 0 V Application Processor...

Страница 87: ...baud rate required by the application for the appropriate selection of the resistance value for the external pull up biased by the application processor supply rail The TXD data input line of the mod...

Страница 88: ...ccessible and it can be achieved by mounting an ultra low capacitance i e 1 pF ESD protection e g Littelfuse PESD0402 140 ESD protection device on the lines connected to these pins close to accessible...

Страница 89: ...f Figure 60 or c a generic USB device connector connected to the related pins of the module through the specific circuit illustrated in the application circuit example c of Figure 60 and Table 43 29 U...

Страница 90: ...ossible to 90 Ensure the common mode characteristic impedance ZCM is as close as possible to 30 Use design rules for USB_D USB_D as RF transmission lines being them coupled differential micro strip or...

Страница 91: ...B product version the DDC I2C interface pins should not be driven by any external device The DDC I2C bus host interface can be used to communicate with u blox GNSS receivers and other external I2C bus...

Страница 92: ...he positioning receiver when the cellular module is switched off or in the reset state The GPIO3 pin is connected to the TXD1 pin of the u blox 1 8 V GNSS receiver providing the additional GNSS Tx dat...

Страница 93: ...irectional General Purpose Voltage Translator e g TI SN74AVC2T245 which additionally provides the partial power down feature so that the 3 0 V GNSS supply can be also ramped up before the V_INT 1 8 V...

Страница 94: ...tatus indication provided by a GPIO pin see section 1 6 1 SIM card detection provided over GPIO5 pin see Figure 50 Table 37 in section 2 5 SARA R4 series GPIO1 R1 R3 3V8 Network indicator R2 16 DL1 T1...

Страница 95: ...internal u blox M8 GNSS chipset the line can be connected to a UART data input pin of the application processor see Figure 66 The EXTINT external interrupt pin that can be used for control of the GNS...

Страница 96: ...that affects the module analog parts and RF circuits performance Implement suitable countermeasures to avoid any possible Electro Magnetic Compatibility issue Make sure that the module RF and analog p...

Страница 97: ...ering paste is 150 m according to application production process requirements K M1 M1 M2 E G H J E ANT pin B Pin 1 K G H J A D D O O L N L I F F K M1 M1 M2 E G H J E ANT pin B Pin 1 K G H J A D D O O...

Страница 98: ...l differ according to the specific mechanical deployments of the module e g application PCB with different dimensions and characteristics mechanical shells enclosure or forced air flow The increase of...

Страница 99: ...nector Cellular antenna 33pF ANT TP 0 39nH 15pF 15pF 100nF 24 GPIO3 V_INT B1 A1 GND B2 A2 VCCB VCCA SN74AVC2T245 Voltage Translator 100nF 100nF 3V0 TxD1 4 7k IN OUT LDO Regulator SHDNn 4 7k 3V8 3V0 23...

Страница 100: ...es follow the ITU T V 24 recommendation 7 Capacitance and series resistance must be limited on each high speed line of the USB interface It is strongly recommended to provide accessible test points di...

Страница 101: ...quirement 90 differential and 30 common mode and should not be routed close to any RF line part Ensure appropriate RF precautions for the GNSS and Cellular technologies coexistence 2 15 3 Antenna chec...

Страница 102: ...Protective Area EPA The EPA can be a small working station or a large manufacturing area The main principle of an EPA is that there are no highly charging materials near ESD sensitive electronics all...

Страница 103: ...se control of the temperature and all parts will be heated up evenly regardless of material properties thickness of components and surface color Consider the IPC 7530A Guidelines for temperature profi...

Страница 104: ...ical Leadfree 100 Soldering Profile 50 50 E lapsed time s Figure 69 Recommended soldering profile The modules must not be soldered with a damp heat process 3 3 3 Optical inspection After soldering the...

Страница 105: ...series module already populated on it Performing a wave soldering process on the module can result in severe damage to the device u blox gives no warranty against damages to the SARA R4 series module...

Страница 106: ...be sufficient to provide optimum immunity to interference and noise u blox gives no warranty for damages to the cellular modules caused by soldering metal cables or any other forms of metal strips di...

Страница 107: ...bile network operator such as AT T network operator in United States Verizon Wireless network operator in United States The manufacturer of the end device that integrates a SARA R4 series module must...

Страница 108: ...NB1 bands 3 5 8 28 NCC Taiwan LTE M NB1 bands 3 8 28 LTE M NB1 bands 3 8 28 GITEKI Japan LTE M NB1 bands 1 8 18 19 26 LTE M NB1 bands 1 8 18 19 26 KC Korea LTE M bands 3 5 26 ANATEL Brazil LTE M NB1 b...

Страница 109: ...0 ISED ID 8595A UBX20VA01 IFT Mexico LTE M bands 2 4 5 12 NB IoT bands 2 4 5 12 ACMA Australia LTE M bands 3 5 8 28 NB IoT bands 3 5 8 28 NCC Taiwan LTE M bands 3 8 28 NB IoT bands 3 8 28 ANATEL Brazi...

Страница 110: ...2M FCC US ID XPY2AGQN4NNN XPY2AGQN4NNN XPY2AGQN4NNN XPYUBX18ZO01 Product Name SARA R410M SARA R410M 02B SARA R410M 02B SARA R412M ISED Canada ID 8595A 2AGQN4NNN 8595A 2AGQN4NNN 8595A 2AGQN4NNN 8595A U...

Страница 111: ...e PICS according to the 3GPP TS 51 010 2 14 3GPP TS 36 521 2 16 and 3GPP TS 36 523 2 17 is a statement of the implemented and supported capabilities and options of a device The PICS document of the ap...

Страница 112: ...mobile and fixed or mobile operating configurations SARA R410M 01B modules o 3 67 dBi in 700 MHz i e LTE FDD 12 band uplink o 4 10 dBi in 850 MHz i e LTE FDD 5 band uplink o 6 74 dBi in 1700 MHz i e L...

Страница 113: ...the SAR requirements for portable devices Changes or modifications not expressly approved by the party responsible for compliance could void the user s authority to operate the equipment Additional N...

Страница 114: ...The gain of the system antenna s used for the SARA R4 series modules i e the combined transmission line connector cable losses and radiating element gain must not exceed the value stated in the ISED...

Страница 115: ...ference that may cause undesired operation of the device Radio Frequency RF Exposure Information The radiated output power of the u blox Cellular Module is below the Innovation Science and Economic De...

Страница 116: ...nt l appareil dans la liste d quipement radio REL Radio Equipment List d Industrie Canada rendez vous sur http www ic gc ca app sitt reltel srch nwRdSrch do lang fra Pour des informations suppl mentai...

Страница 117: ...FDD 3 band uplink SARA R410M 83B modules o 7 61 dBi in 700 MHz i e LTE FDD 28 band uplink o 8 28 dBi in 800 MHz i e LTE FDD 20 band uplink o 8 53 dBi in 900 MHz i e LTE FDD 8 band uplink o 11 43 dBi i...

Страница 118: ...g notice rests solely with the integrator of the u blox SARA R410M 02B SARA R410M 83B and SARA R412M 02B modules The antenna used for the SARA R410M 02B SARA R410M 83B and SARA R412M 02B modules must...

Страница 119: ...e typical automatic test equipment ATE in a production line The following typical tests are among the production tests Digital self test firmware download flash firmware verification IMEI programming...

Страница 120: ...etails 5 2 1 Go No go tests for integrated devices A Go No go test is typically used to compare the signal quality with a Golden Device in a location with excellent network coverage and known signal q...

Страница 121: ...ted to the ANT port To avoid module damage during a receiver test the maximum power level received at the ANT port must meet module specifications The UTEST AT command sets the module to emit RF power...

Страница 122: ...terpreter Software Subsystem or attention BeiDou Chinese satellite navigation system BJT Bipolar Junction Transistor C No Carrier to Noise ratio Cat Category CE European Conformity CSFB Circuit Switch...

Страница 123: ...ifier LPWA Low Power Wide Area LTE Long Term Evolution LWM2M Open Mobile Alliance Lightweight Machine to Machine protocol M2M Machine to Machine MQTT Message Queuing Telemetry Transport N A Not Applic...

Страница 124: ...efined TCP Transmission Control Protocol TDD Time Division Duplex TDMA Time Division Multiple Access TIS Total Isotropic Sensitivity TP Test Point TRP Total Radiated Power UART Universal Asynchronous...

Страница 125: ...hnique https www gsma com newsroom wp content uploads TS 09 v11 0 pdf 13 3GPP TS 51 010 1 Mobile Station conformance specification part 1 conformance specification 14 3GPP TS 51 010 2 Technical Specif...

Страница 126: ...of AT Inactivity Timer to enter power saving mode R10 20 Sep 2018 lpah sses Extended document applicability to SARA R404M 00B 01 type number Clarified mode supported in frequency bands Added further g...

Страница 127: ...ec 2020 sses Extended document applicability to SARA R410M 63B 01 R19 23 Feb 2021 sses Extended document applicability to product versions SARA R410M 02B 03 SARA R412M 02B 03 R20 02 Apr 2021 sses Exte...

Страница 128: ...lox com Regional Office China Beijing Phone 86 10 68 133 545 Email info_cn u blox com Support support_cn u blox com Regional Office China Chongqing Phone 86 23 6815 1588 Email info_cn u blox com Suppo...

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