EVA-M8M - Hardware Integration Manual
2.2.5
SQI Flash memory
An external SQI (Serial Quad Interface) Flash memory can be connected to the EVA-M8M SQI interface to
provide the following options:
•
Run firmware out of the SQI Flash and have the possibility to update the firmware
•
Store the current configuration permanently
•
Save data logging results
•
Hold AssistNow Offline and AssistNow Autonomous data
An SQI Flash must be connected when firmware update is a prime requirement.
The EVA-M8M modules can make use of a dedicated flash firmware with an external SQI Flash memory.
The voltage level of the SQI interface follows the VCC_IO level. Therefore, the SQI Flash must be supplied
with the same voltage as VCC_IO of the EVA-M8M. It is recommended to place a decoupling capacitor
(C4) close to the supply pin of the SQI Flash.
Make sure that the SQI Flash supply range matches the voltage supplied at VCC_IO.
Figure 3
: Connecting an external SQI Flash memory
Running the firmware from the SQI Flash requires a minimum SQI Flash size of 8 Mbit. An 8 Mbit device is also
sufficient to save AssistNow Offline and AssistNow Autonomous information as well as Current configuration
data. However, to run Firmware from the SQI Flash and provide space for logging results, a minimum size of 8
Mbit might not be sufficient depending on the amount of data to be logged.
For more information about supported SQI Flash devices see Table 17.
There is a configurable VCC_IO monitor threshold (iomonCfg) to ensure that the EVA-M8M receivers only start if
the VCC_IO supply (which is used to supply the SQI Flash), is within the supply range of the SQI Flash device. This
will ensure that any connected SQI Flash memory will be detected correctly at startup. By default the VCC_IO
monitor threshold is set for using a 1.8 V Flash memory device.
The VCC_IO monitor threshold (iomonCfg) must be set according to the SQI supply voltage level
(VCC_IO).
When using a 3.0 V or a 3.3 V flash memory device send one of the following sequences to the EVA-M8M
receiver in production:
B5 62 06 41 0C 00 00 00 03 1F 20 EC 68 C6 FE 7F FE FF 29 3E (for a 3.0 V Flash memory)
B5 62 06 41 0C 00 00 00 03 1F 6B 74 EB FD FE 7F 7E FF 36 73 (for a 3.3 V Flash memory)
Applying these sequences result in a permanent change and cannot be reversed.
UBX-14006179 - R01
Advance Information
Design-in
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