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SARA-R4 series - System Integration Manual

UBX-16029218 - R06

Design-in

Page 62 of 102

Guidelines for single SIM card connection with detection

An application circuit for the connection to a single removable SIM card placed in a SIM card holder is described
in Figure 28, where the optional SIM card detection feature is implemented.
Follow these guidelines connecting the module to a SIM connector implementing SIM presence detection:



Connect the UICC / SIM contacts C1 (VCC) to the

VSIM

pin of the module.



Connect the UICC / SIM contact C7 (I/O) to the

SIM_IO

pin of the module.



Connect the UICC / SIM contact C3 (CLK) to the

SIM_CLK

pin of the module.



Connect the UICC / SIM contact C2 (RST) to the

SIM_RST

pin of the module.



Connect the UICC / SIM contact C5 (GND) to ground.



Connect one pin of the normally-open mechanical switch integrated in the SIM connector (as the SW2 pin in
Figure 28) to the

GPIO5

input pin, providing a weak pull-down resistor (e.g. 470 k



, as R2 in Figure 28).



Connect the other pin of the normally-open mechanical switch integrated in the SIM connector (SW1 pin in
Figure 28) to

V_INT

1.8 V supply output by means of a strong pull-up resistor (e.g. 1 k



, as R1 in Figure 28)



Provide a 100 nF bypass capacitor (e.g. Murata GRM155R71C104K) at the SIM supply line (

VSIM

), close to

the related pad of the SIM connector, to prevent digital noise.



Provide a bypass capacitor of about 22 pF to 47 pF (e.g. Murata GRM1555C1H470J) on each SIM line
(

VSIM

,

SIM_CLK

,

SIM_IO

,

SIM_RST

), very close to each related pad of the SIM connector, to prevent RF

coupling especially in case the RF antenna is placed closer than 10 - 30 cm from the SIM card holder.



Provide a low capacitance (i.e. less than 10 pF) ESD protection (e.g. Tyco Electronics PESD0402-140) on each
externally accessible SIM line, close to each related pad of the SIM connector: ESD sensitivity rating of SIM
interface pins is 1 kV (HBM according to JESD22-A114), so that, according to the EMC/ESD requirements of
the custom application, higher protection level can be required if the lines are externally accessible.



Limit capacitance and series resistance on each SIM signal to match the requirements for the SIM interface
(27.7 ns = max allowed rise time on

SIM_CLK

, 1.0 µs = max allowed rise time on

SIM_IO

and

SIM_RST

).

SARA-R4 series

41

VSIM

39

SIM_IO

38

SIM_CLK

40

SIM_RST

4

V_INT

42

GPIO5

SIM CARD

HOLDER

C
5

C
6

C
7

C
1

C
2

C
3

SIM Card

Bottom View

(contacts side)

C1

VPP (C6)

VCC (C1)

IO (C7)

CLK (C3)

RST (C2)

GND (C5)

C2 C3

C5

J1

C4

SW1

SW2

D1 D2 D3 D4 D5 D6

R2

R1

C
8

C
4

TP

Figure 28: Application circuit for the connection to a single removable SIM card, with SIM detection implemented

Reference

Description

Part Number - Manufacturer

C1, C2, C3, C4

47 pF Capacitor Ceramic C0G 0402 5% 50 V

GRM1555C1H470JA01 - Murata

C5

100 nF Capacitor Ceramic X7R 0402 10% 16 V

GRM155R71C104KA01 - Murata

D1

–

D6

Very Low Capacitance ESD Protection

PESD0402-140 - Tyco Electronics

R1

1 k



Resistor 0402 5% 0.1 W

RC0402JR-071KL - Yageo Phycomp

R2

470 k



Resistor 0402 5% 0.1 W

RC0402JR-07470KL- Yageo Phycomp

J1

SIM Card Holder
6 + 2 positions, with card presence switch

Various Manufacturers,
CCM03-3013LFT R102 - C&K Components

Table 23: Example of components for the connection to a single removable SIM card, with SIM detection implemented

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60
61
62
63
64
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Содержание SARA-R4 Series

Страница 1: ...Abstract This document describes the features and the system integration of SARA R4 series cellular modules These modules are a complete cost efficient and performance optimized multi band LTE Cat M1...

Страница 2: ...uction SARA R410M SARA R410M 01B 00 L0 0 00 00 02 03 UBX 17051617 Initial Production SARA R410M 02B 00 L0 0 00 00 03 UBX 17051388 Functional Sample u blox reserves all rights to this document and the...

Страница 3: ...Integration Manual provides the necessary information to successfully design and configure the u blox cellular modules This manual has a modular structure It is not necessary to read it from the begi...

Страница 4: ...enna RF interface ANT 22 1 7 2 Antenna detection interface ANT_DET 23 1 8 SIM interface 23 1 8 1 SIM interface 23 1 8 2 SIM detection interface 23 1 9 Data communication interfaces 24 1 9 1 UART inter...

Страница 5: ...2 6 2 USB interface 69 2 6 3 SPI interface 71 2 6 4 SDIO interface 71 2 6 5 DDC I 2 C interface 71 2 7 Audio 71 2 8 General Purpose Input Output 72 2 9 Reserved pins RSVD 72 2 10 Module placement 73...

Страница 6: ...4 2 2 Declaration of Conformity 84 4 2 3 Modifications 85 4 3 Innovation Science and Economic Development Canada notice 85 4 3 1 Declaration of Conformity 85 4 3 2 Modifications 86 5 Product testing 8...

Страница 7: ...Cat M1 supports vehicular handover capability and delivers the technology necessary to enable the use of the modules in applications such as vehicle asset and people tracking where mobility is a pre...

Страница 8: ...FDD Band 12 700 MHz FDD Band 17 700 MHz FDD Band 28 700 MHz FDD Band 13 700 MHz FDD Band 20 800 MHz FDD Band 26 850 MHz FDD Band 5 850 MHz FDD Band 19 850 MHz FDD Band 8 900 MHz FDD Band 4 1700 MHz FD...

Страница 9: ...s the internal architecture of SARA R4 series modules Memory V_INT RF transceiver Cellular BaseBand Processor ANT VCC Supply USB DDC I2C SIM card detection SIM UART Power On Reset GPIOs Antenna detect...

Страница 10: ...ded See section 1 6 1 for functional description See section 2 3 1 for external circuit design in RESET_N 18 I External reset input Internal 37 k pull up resistor Test Point for diagnostic access is r...

Страница 11: ...nal active pull up to V_INT See section 1 9 1 for functional description See section 2 6 1 for external circuit design in DCD 8 O UART data carrier detect output 1 8 V Circuit 109 in ITU T V 24 See se...

Страница 12: ...ternal circuit design in SDIO_D1 49 I O SDIO serial data 1 Not supported by 00 01 and 02 product versions See section 1 9 4 for functional description See section 2 6 4 for external circuit design in...

Страница 13: ...al description See section 2 7 for external circuit design in GPIO GPIO1 16 I O GPIO 1 8 V GPIO with alternatively configurable functions See section 1 11 for functional description See section 2 8 fo...

Страница 14: ...p mode entering the Power Saving Mode defined in 3GPP Rel 13 whenever possible if power saving configuration is enabled by AT CPSMS command see SARA R4 series AT Commands Manual 2 reducing current con...

Страница 15: ...o low power deep sleep mode whenever possible Vice versa the module wakes up from low power deep sleep mode to active mode and then connected mode if RF Tx Rx activity is necessary When a data connect...

Страница 16: ...e limits though the module is still fully functional until the VCC voltage is inside the extended operating range limits VCC voltage during normal operation Within VCC extended operating range 3 00 V...

Страница 17: ...ARA R4 series Data Sheet 1 Time ms Current mA Current consumption value depends on TX power and actual antenna load 1 Slot 1 Resource Block 0 5 ms 1 LTE Radio Frame 10 ms 0 300 200 100 500 400 Figure...

Страница 18: ...en the module is in active mode In such case the module is registered with the network and while active mode is maintained the receiver is periodically activated to monitor the paging channel for pagi...

Страница 19: ...are held in the reset state When the internal reset signal is released any digital pin is set in a proper sequence from the reset state to the default operational configured state The duration of thi...

Страница 20: ...AT command after a time period longer than the one defined in the SARA R4 series AT Commands Manual 2 Figure 6 describes the SARA R4 series modules switch off sequence started by means of the AT CPWRO...

Страница 21: ...duration of each phase in the SARA R4 series modules switch off routines can largely vary depending on the application network settings and the concurrent module activities 1 6 3 Module reset SARA R4...

Страница 22: ...11 6 dB VSWR 3 1 acceptable The Return loss or the S11 as the VSWR refers to the amount of reflected power measuring how well the antenna RF connection matches the 50 characteristic impedance of the A...

Страница 23: ...stic circuit on antenna assembly design in guidelines 1 8 SIM interface 1 8 1 SIM interface SARA R4 series modules provide high speed SIM ME interface including automatic detection and configuration o...

Страница 24: ...nctionality FW upgrades by means of the FOAT feature see 1 13 7 The UART is available only if the USB is not enabled as AT command data communication interface UART and USB cannot be concurrently used...

Страница 25: ...1 2 UART signals behavior At the end of the module boot sequence see Figure 5 the module is by default in active mode and the UART interface is initialized and enabled as AT commands interface only i...

Страница 26: ...mmunication interface only if an external valid USB VBUS supply voltage 5 0 V typical is applied at the VUSB_DET input of the module since the switch on of the module and then held during normal opera...

Страница 27: ...h a u blox GNSS receiver and with external I 2 C devices as an audio codec the SARA R4 module acts as an I 2 C master which can communicate with I 2 C slaves in accordance with the I 2 C bus specifica...

Страница 28: ...tion GPIO5 Module status indication Module switched off or in PSM low power deep sleep mode versus active or connected mode GPIO1 GPIO2 GPIO3 GPIO4 GPIO5 GPIO6 General purpose input Input to sense hig...

Страница 29: ...ies AT Commands Manual 2 1 13 4 TCP IP and UDP IP SARA R4 series modules provide embedded TCP IP and UDP IP protocol stack a PDP context can be configured established and handled via the data connecti...

Страница 30: ...A using LWM2M For more details about Firmware update Over The Air procedure see SARA R4 series AT Commands Manual 2 1 13 9 Power saving 1 13 9 1 Guidelines to optimize power consumption The LTE Cat M1...

Страница 31: ...SARA R4 series System Integration Manual UBX 16029218 R06 System description Page 31 of 102...

Страница 32: ...in Active mode The Periodic Update Timer is the Extended Tracking Area Update TAU used by the SARA R4 series module to periodically notify the network of its availability The SARA R4 series module re...

Страница 33: ...eeds to be reported by the SARA R4 series module interrupting the PSM low power deep sleep mode it can be done so by setting the module into Active mode using the appropriate power on event see 1 6 1...

Страница 34: ...ins Accurate design is required to guarantee USB 2 0 high speed interface functionality Carefully follow the suggestions provided in the relative section 2 6 2 for schematic and layout design 4 SIM in...

Страница 35: ...eater than 5 V than the operating supply voltage of SARA R4 series The use of switching step down provides the best power efficiency for the overall application and minimizes current drawn from the ma...

Страница 36: ...e good efficiency transforming a 12 V or greater voltage supply to the typical 3 8 V value of the VCC supply The characteristics of the switching regulator connected to VCC pins should meet the follow...

Страница 37: ...apacitor Ceramic X7R 50 V Generic manufacturer C2 10 nF Capacitor Ceramic X7R 16 V Generic manufacturer C3 22 nF Capacitor Ceramic X7R 16 V Generic manufacturer C4 22 F Capacitor Ceramic X5R 25 V Gene...

Страница 38: ...gulator Figure 12 and the components listed in Table 10 show an example of a power supply circuit where the VCC module supply is provided by an LDO linear regulator capable of delivering the required...

Страница 39: ...ity in Amp hours divided by 1 hour DC series resistance the non rechargeable battery with its output circuit must be capable of avoiding a VCC voltage drop below the operating range summarized in Tabl...

Страница 40: ...evices where both a permanent primary supply charging source e g 12 V and a rechargeable back up battery e g 3 7 V Li Pol are available at the same time as possible supply source should implement a su...

Страница 41: ...integrated switching charger will take the remaining current to charge the battery Additionally the power path control allows an internal connection from battery to the module with a low series intern...

Страница 42: ...61A104KA01 Murata C3 1 F Capacitor Ceramic X7R 0603 10 25 V GRM188R71E105KA12 Murata C7 C13 68 pF Capacitor Ceramic C0G 0402 5 50 V GRM1555C1H680JA01 Murata C8 C14 15 pF Capacitor Ceramic C0G 0402 5 2...

Страница 43: ...ize voltage drops Adequate maximum Drain current see SARA R4 series Data Sheet 1 for module consumption figures C3 GND C2 C1 C4 SARA R4 series 71 VCC 72 VCC 70 VCC VCC Supply Source GND C5 U1 VOUT VIN...

Страница 44: ...data sources 10 F capacitor or greater to avoid undershoot and overshoot at the start and end of RF Tx A suitable series ferrite bead can be properly placed on the VCC line for additional noise filter...

Страница 45: ...the SARA R4 series modules in the worst case Shielding of switching DC DC converter circuit or at least the use of shielded inductors for the switching DC DC converter may be considered since all swi...

Страница 46: ...ich might exceed the limit for maximum available current from V_INT supply see the SARA R4 series Data Sheet 1 as this can cause malfunctions in internal circuitry V_INT can only be used as an output...

Страница 47: ...essible point An open drain or open collector output is suitable to drive the PWR_ON input from an application processor as described in Figure 18 The PWR_ON input pin should not be driven high by an...

Страница 48: ...le to drive the RESET_N input from an application processor as described in Figure 19 The RESET_N input pin should not be driven high by an external device as it may cause start up issues SARA R4 seri...

Страница 49: ...he connector manufacturer Integrated antennas e g PCB antennas such as patches or ceramic SMT elements o Internal integrated antennas imply physical restriction to the design of the PCB Integrated ant...

Страница 50: ...the application PCB to at least 250 m up to adjacent pads metal definition and up to 400 m on the area below the module to reduce parasitic capacitance to ground as described in the left picture in F...

Страница 51: ...lement method solver for electromagnetic structures from Ansys Corporation or using freeware tools like AppCAD from Agilent www agilent com or TXLine from Applied Wave Research www mwoffice com taking...

Страница 52: ...on the transmission lines Avoid signal routing in parallel to transmission lines or crossing the transmission lines on buried metal layer Do not route microstrip lines below discrete component or othe...

Страница 53: ...ce to ground If an integrated antenna is used the RF terminations are represented by the integrated antenna The following guidelines should be followed Use an antenna designed by an antenna manufactur...

Страница 54: ...Hz 2490 2690 MHz 35 0 x 8 5 x 3 2 mm Ethertronics P822601 GSM WCDMA LTE SMD Antenna 698 960 MHz 1710 2170 MHz 2490 2700 MHz 50 0 x 8 0 x 3 2 mm Ethertronics P822602 GSM WCDMA LTE SMD Antenna 698 960 M...

Страница 55: ...60 MHz 1710 2170 MHz 2500 2700 MHz 110 0 x 21 0 mm Table 18 Examples of internal antennas with cable and connector Table 19 lists some examples of possible external antennas Manufacturer Part Number P...

Страница 56: ...NJ02 Murata C4 22 pF Capacitor Ceramic C0G 0402 5 25 V GRM1555C1H220J Murata L3 68 nH Multilayer Inductor 0402 SRF 1 GHz LQG15HS68NJ02 Murata R2 15 k Resistor for Diagnostic Various Manufacturers Tabl...

Страница 57: ...oad resistor of 15 k Using the UANTR AT command the module reports the resistance value evaluated from the antenna connector provided on the application board to GND Reported values close to the used...

Страница 58: ...4 1 and the recommendations of the SMA connector manufacturer DC blocking capacitor at ANT pin C2 has to be placed in series to the 50 RF line The ANT_DET pin has to be connected to the 50 transmissi...

Страница 59: ...or applications requiring a change of SIM card during the product lifetime A SIM card holder can have 6 or 8 positions if a mechanical card presence detector is not provided or it can have 6 2 or 8 2...

Страница 60: ...e i e less than 10 pF ESD protection e g Tyco PESD0402 140 on each externally accessible SIM line close to each relative pad of the SIM connector ESD sensitivity rating of the SIM interface pins is 1...

Страница 61: ...ut 22 pF to 47 pF e g Murata GRM1555C1H470J on each SIM line to prevent RF coupling especially in case the RF antenna is placed closer than 10 30 cm from the SIM lines Limit capacitance and series res...

Страница 62: ...prevent RF coupling especially in case the RF antenna is placed closer than 10 30 cm from the SIM card holder Provide a low capacitance i e less than 10 pF ESD protection e g Tyco Electronics PESD0402...

Страница 63: ...analog inputs In the second case the same harmonics can be picked up and create self interference that can reduce the sensitivity of LTE receiver channels whose carrier frequency is coincidental with...

Страница 64: ...module DCE by means of appropriate unidirectional voltage translators using the module V_INT output as 1 8 V supply for the voltage translators on the module side as described in Figure 30 4 V_INT Tx...

Страница 65: ...riate unidirectional voltage translators using the module V_INT output as 1 8 V supply for the voltage translators on the module side as described in Figure 32 given that the DTE will behave properly...

Страница 66: ...0 V Application Processor DTE is used then it is recommended to connect the 1 8 V UART interface of the module DCE by means of appropriate unidirectional voltage translators using the module V_INT ou...

Страница 67: ...P TP Figure 35 UART interface application circuit with partial V 24 link 3 wire in the DTE DCE serial communication 1 8V DTE If a 3 0 V Application Processor DTE is used then it is recommended to conn...

Страница 68: ...the cellular module Consider the value of the pull up integrated at each input of the DTE if any and the baud rate required by the application for the appropriate selection of the resistance value fo...

Страница 69: ...e line connected to this pin as described in Figure 37 and Table 28 The USB interface pins ESD sensitivity rating is 1 kV Human Body Model according to JESD22 A114F Higher protection level could be re...

Страница 70: ...s possible to 90 Ensure the common mode characteristic impedance ZCM is as close as possible to 30 Consider design rules for USB_D USB_D similar to RF transmission lines being them coupled differentia...

Страница 71: ...fications 9 and they have internal pull up resistors to the V_INT 1 8 V supply rail of the module so there is no need of additional components on the external application board Capacitance and series...

Страница 72: ...series to the GPIO of SARA R4 series modules Do not apply voltage to any GPIO of the module before the switch on of the GPIOs supply V_INT to avoid latch up of circuits and allow a proper module boot...

Страница 73: ...es to avoid any possible Electro Magnetic Compatibility issue Make sure that the module RF and analog parts circuits and high speed digital circuits are clearly separated from any sensitive part circu...

Страница 74: ...o application production process requirements K M1 M1 M2 E G H J E ANT pin B Pin 1 K G H J A D D O O L N L I F F K M1 M1 M2 E G H J E ANT pin B Pin 1 K G H J A D D O O L N L I F F Stencil 150 m Figure...

Страница 75: ...l differ according to the specific mechanical deployments of the module e g application PCB with different dimensions and characteristics mechanical shells enclosure or forced air flow The increase of...

Страница 76: ...RXD 8 DCD 10 RTS 11 CTS 9 DTR 6 DSR 7 RI TP TP TXD RXD DCD RTS CTS DTR DSR RI 1 8 V DTE GND GND USB 2 0 host D D 28 USB_D 29 USB_D VBUS 17 VUSB_DET TP TP GND GND 0 0 0 0 47pF SIM Card Holder CCVCC C1...

Страница 77: ...tly connected to the following pins of the SARA R4 series modules V_INT PWR_ON and RESET_N for diagnostic purpose Capacitance and series resistance must be limited on each SIM signal to match the SIM...

Страница 78: ...optimal grounding connecting each GND pin with application board solid ground layer Use as many vias as possible to connect the ground planes on multilayer application board providing a dense line of...

Страница 79: ...Protective Area EPA The EPA can be a small working station or a large manufacturing area The main principle of an EPA is that there are no highly charging materials near ESD sensitive electronics all...

Страница 80: ...onsider the IPC 7530 Guidelines for temperature profiling for mass soldering reflow and wave processes published 2001 Reflow profiles are to be selected according to the following recommendations Fail...

Страница 81: ...inspection After soldering the SARA R4 series modules inspect the modules optically to verify that the module is properly aligned and centered 3 3 4 Cleaning Cleaning the modules is not recommended Re...

Страница 82: ...not provide 100 protection for the module from coating liquids with low viscosity therefore care is required in applying the coating Conformal Coating of the module will void the warranty 3 3 10 Casti...

Страница 83: ...c application device to be deployed in the market The required certification scheme approvals and relative testing specifications differ depending on the country or the region where the device that in...

Страница 84: ...device may not cause harmful interference this device must accept any interference received including interference that may cause undesired operation Radiofrequency radiation exposure Information this...

Страница 85: ...s B digital device pursuant to part 15 of the FCC Rules These limits are designed to provide reasonable protection against harmful interference in a residential installation This equipment generates u...

Страница 86: ...Canada Certificates of the SARA R4 series modules for their own final products according to the conditions referenced in the certificates The ISED Canada Label shall in the above case be visible from...

Страница 87: ...ilisez l appareil de sans fil u blox Cellular Module de fa on minimiser les contacts humains lors du fonctionnement normal Ce p riph rique a t valu et d montr conforme aux limites d exposition aux fr...

Страница 88: ...automatic test equipment ATE in a production line The following typical tests are among the production tests Digital self test firmware download Flash firmware verification IMEI programming Measureme...

Страница 89: ...o perform RF performance tests see the following section 5 2 2 for details 5 2 1 Go No go tests for integrated devices A Go No go test is typically to compare the signal quality with a Golden Device i...

Страница 90: ...ring LTE signaling protocol This emission can generate interference that can be prohibited by law in some countries The use of this feature is intended for testing purpose in controlled environments b...

Страница 91: ...44 46 47 49 50 52 53 33 35 36 38 39 41 42 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 CTS RTS DCD RI V_INT V_BCKP GND CODEC_CLK RESET_N GPIO1 PWR_ON...

Страница 92: ...1950 2000 2050 2100 2150 2200 I I VIII VIII 960 1710 2170 750 700 800 850 900 950 V V II II 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 824 894 1850 1990 750 700 II II 850 900 800 850 900 9...

Страница 93: ...Not supported by SARA N2 Diverse driver strength 9 DTR UART DTR Input V_INT level 1 8 V Internal pull up 33 k DTR UART DTR Input V_INT level 1 8 V Internal pull up 14 k DTR UART DTR Input V_INT level...

Страница 94: ...level 1 8 V Default Pin disabled Driver strength 2 mA GPIO1 GPIO V_INT level 1 8 V Configurable as secondary UART data output TestPoint recommended for diagnostic Diverse driver strength TestPoint rec...

Страница 95: ...A I 2 C Data I O V_INT level 1 8 V Open drain No internal pull up SDA I 2 C Data I O 15 V_INT level 1 8 V Open drain Internal 2 2 k pull up SDA I 2 C Data I O 16 V_INT level 1 8 V Open drain No intern...

Страница 96: ...SIM Clock Output SIM_CLK 1 8V SIM Clock Output 39 SIM_IO 1 8V 3V SIM Data I O Internal 4 7 k pull up SIM_IO 1 8V 3V SIM Data I O Internal 4 7 k pull up SIM_IO 1 8V 3V SIM Data I O Internal 4 7 k pull...

Страница 97: ...current in NB IoT recommended 10uF cap Switch on by applying VCC Diverse voltage levels Diverse current consumption Diverse recommended external capacitors and other parts Regular pF nF recommended Di...

Страница 98: ...tion EMC Electro Magnetic Compatibility EMI Electro Magnetic Interference ESD Electro Static Discharge ESR Equivalent Series Resistance E UTRA Evolved Universal Terrestrial Radio Access FDD Frequency...

Страница 99: ...Wave SDIO Secure Digital Input Output SIM Subscriber Identification Module SMS Short Message Service SPI Serial Peripheral Interface SRF Self Resonant Frequency SSL Secure Socket Layer TBD To Be Defin...

Страница 100: ...rement and Current Consumption Technique https www gsma com newsroom wp content uploads TS 09_v10 0 pdf 11 3GPP TS 36 521 1 Evolved Universal Terrestrial Radio Access User Equipment conformance specif...

Страница 101: ...xtended document applicability to SARA R410M 01B product version R03 24 May 2017 sses Updated supported features and electrical characteristics R04 19 Jul 2017 sses Updated supported features and elec...

Страница 102: ...m Support support_ap u blox com Regional Office China Beijing Phone 86 10 68 133 545 E mail info_cn u blox com Support support_cn u blox com Regional Office China Chongqing Phone 86 23 6815 1588 E mai...

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