TXZ Family
Flash Memory
2018-06-05
54 / 120
Rev. 2.0
4.1.3. Command Description
This section explains each command contents. For details of specific command sequences, refer to “3.1.1Command
Sequence” and “3.2.1Command Sequence”.
4.1.3.1. Automatic Programming
(1)
Operation
Code flash can be programmed in four words (16 bytes) unit with the automatic programming command
sequence. Programming across 16 bytes is not possible. Data flash can be programmed in one word (four
bytes) unit.
Programming data to flash memory means that data cells of “1” become those of “0”. It is not possible to
become data cells of “1” from those of “0”. To become data cells of “1” from “0”, the erase operation is
required.
The automatic programming is allowed only once to each programming unit already erased. Either data cells
of “1” or “0” cannot be programmed data twice or more. If reprogramming to an address that has already
been programmed once, the automatic program is needed to be set again after the automatic page erasing,
automatic block erasing, or automatic chip erasing command is executed.
Another command sequence is not accepted during automatic operation.
After programmed, flash memory returns to command sequence input mode.
Note1: Programming execute to the same programming unit twice or more without erasing operation may
damage the data.
Note2: Programming to the protected block is not possible.
(2)
How to set
The 1
st
to 3
rd
bus write cycles are the automatic programming command.
In the 4
th
bus write cycle, the first address and data are inputted. On and after 5
th
bus cycle, remaining data of
four words will be inputted. Data flash is programmed in one word (32 bits) unit.
If a part of 16 bytes of code flash is used, program “0xFFFFFFFF” to the unused remaining part of 16 bytes.
If a part of four bytes of data flash is used, program “0xFFFFFFFF” to the unused remaining part of four
bytes.