THORLABS PDA36A2, Руководство пользователя

Страница: 9 / 16

Si Switchable Gain Detector Chapter 6: Specifications
Rev A, December 27, 2017 Page 7
Chapter 6 Specifications
All performance specifications are typical, performed at 25 °C ambient
temperature, and assume a 50
Ω load, unless stated otherwise.
Performance Specifications 2
0 dB Setting 40 dB Setting
Gain (Hi-Z)
1.51 x 10 3 V/A ±2%
Gain (Hi-Z)
1.51 x 10 5 V/A ±2%
Gain (50 Ω ) 0.75 x 10
3
V/A ±2% Gain (50 Ω ) 0.75 x 10
5
V/A ±2%
Bandwidth
3 12 MHz
Bandwidth
3 90 kHz
Noise (RMS) 258 μ V Noise (RMS) 214 μ V
NEP (@

p
) 7.57 x 10 -11 W/

Hz NEP (@

p
) 3.25 x 10 -12 W/

Hz
Offset
±5 mV (Typ.)
±10 mV (Max)
Offset
±6 mV (Typ.)
±10 mV (Max)
10 dB Setting 50 dB Setting
Gain (Hi-Z) 4.75 x 10
3
V/A ±2% Gain (Hi-Z) 4.75 x 10
5
V/A ±2%
Gain (50 Ω ) 2.38 x 10
3
V/A ±2% Gain (50 Ω ) 2.38 x 10
5
V/A ±2%
Bandwidth 3 1.6 MHz Bandwidth 3 28 kHz
Noise (RMS)
192 μ V
Noise (RMS)
234 μ V
NEP (@

p
) 5.8 x 10
-12
W/

Hz NEP (@

p
) 3.69 x 10
-12
W/

Hz
Offset
±6 mV (Typ.)
±10 mV (Max)
Offset
±6 mV (Typ.)
±10 mV (Max)
20 dB Setting 60 dB Setting
Gain (Hi-Z) 1.5 x 10
4
V/A ±2% Gain (Hi-Z) 1.5 x 10
6
V/A ±5%
Gain (50 Ω )
0.75 x 10 4 V/A ±2%
Gain (50 Ω )
0.75 x 10 6 V/A ±5%
Bandwidth 3 1 MHz Bandwidth 3 9 kHz
Noise (RMS)
207 μ V
Noise (RMS)
277 μ V
NEP (@

p
) 3.4 x 10
-12
W/

Hz NEP (@

p
) 4 x 10
-12
W/

Hz
Offset
±6 mV (Typ.)
±10 mV (Max)
Offset:
±6 mV (Typ.)
±10 mV (Max)
30 dB Setting 70 dB Setting
Gain (Hi-Z) 4.75 x 10
4
V/A ±2% Gain (Hi-Z) 4.75 x 10
6
V/A ±5%
Gain (50 Ω )
2.38 x 10 4 V/A ±2%
Gain (50 Ω )
2.38 x 10 6 V/A ±5%
Bandwidth 3 260 kHz Bandwidth 3 3 kHz
Noise (RMS) 211 μ V Noise (RMS) 388 μ V
NEP (@

p
) 3.4 x 10 -12 W/

Hz NEP (@

p
) 4.29 x 10 -12 W/

Hz
Offset
±6 mV (Typ.)
±10 mV (Max)
Offset
±8 mV (Typ.)
±12 mV (Max)
2
The PDA36A2 has a 50
Ω series terminator resistor (i.e. in series with amplifier output). This
forms a voltage divider with any load impedance (e.g. 50 Ω load divides signal in half).
3
Tested at 650 nm wavelength. For NIR wavelengths, the rise time of the photodiode element will
become slower which may limit the effective bandwidth of the amplified detector.