Si Switchable Gain Detector
Chapter 4: Operation
Rev A, December 27, 2017
Page 5
Material
Dark
Current
Speed
Sensitivity
1
(nm)
Cost
Silicon (Si)
Low
High
400 – 1000
Low
Germanium (Ge)
High
Low
900 – 1600
Low
Gallium Phosphide (GaP)
Low
High
150 – 550
Med
Indium Gallium Arsenide
(InGaAs)
Low
High
800 – 1800
Med
Extended Range: Indium
Gallium Arsenide (InGaAs)
High
High
1200 – 2600
High
4.4. Bandwidth and Response
For the PDA detectors, the gain of the detector is dependent on the feedback
element (R
f
). The bandwidth of the detector can be calculated using the
following:
3
4
Where GBP is the amplifier gain bandwidth product and C
D
is the sum of the
photodiode junction capacitance and the amplifier capacitance.
4.5. Terminating
Resistance
The maximum output of the PDA36A2 is 10 V for high impedance loads (i.e.
RLoad > 5 k
Ω
) and 5 V for 50
Ω
loads. Adjust the gain so that the measured
signal level out of the PDA36A2 is below 10 V (5 V with a 50
Ω
load) to avoid
saturation.
For low terminating resistors, <5 k
Ω
or 1% error, an additional factor needs to be
considered. The output of the PDA includes a 50
Ω
series resistor (R
s
). The
output load creates a voltage divider with the 50
Ω
series resistor as follows:
∗
∗
∗
4.6. Gain
Adjustment
The PDA36A2 includes a low noise, low offset, high gain transimpedance
amplifier that allows gain adjustment over a 70 dB range. The gain is adjusted by
rotating the gain control knob, located on the top side of the unit. There are 8
gain positions incremented in 10 dB steps. It is important to note that the
bandwidth will decrease as the gain increases. See the specifications table on
page 7 to choose the best gain verse bandwidth for a given input signal.
1
Approximate values; actual wavelength values will vary.