THORLABS DET25K2, Руководство пользователя

Страница: 14 / 18

GaP Biased Detector Chapter 7: Specifications
Page 12 TTN134134-D02
Chapter 7 Specifications
All measurements performed at 25 °C ambient temperature, unless stated
otherwise.
Electrical Specifications
Detector - GaP
Active Area - 2.2 mm x 2.2 mm (4.8 mm
2
)
Wavelength Range λ 150 to 550 nm
Peak Wavelength λ
p
430 nm (Typ.)
Peak Response 2 
( λ
p
)
0.12 A/W (Typ.)
Shunt Resistance R
sh
100 G Ω (Typ.)
Junction Capacitance C
J
500 pF (Typ.)
Rise Time (405 nm)
2,3,4
t
r
55 ns (Typ.)
NEP ( λ
p
) - 1.3 x 10 -14 W/ √ Hz (Typ.)
Bias Voltage V
R
5 V
Dark Current
5
I
D
40 pA (Max)
Output Current V
OUT
0 to 5 mA
General
On/Off Switch Slide
Battery Check Switch Momentary Pushbutton
Output BNC (DC Coupled)
Package Size
2.79" x 1.96" x 0.89"
(70.9 mm x 49.8 mm x 22.5 mm)
PD Surface Depth 6 0.09" (2.2 mm)
Weight 0.10 kg
Accessories
SM1T1 Coupler
SM1RR Retainer Ring
Storage Temp -20 to 70 °C
Operating Temp 10 to 50 °C
Battery A23, 12 V
DC
, 40 mAh
Low Battery Voltage
7
(See Battery Check)
V
OUT
(Hi-Z) ~9 V
V
OUT
(50 Ω ) ~170 mV
2 Measured with specified bias voltage of 5 V.
3 Low battery voltage will result in slower rise times and decreased bandwidth.
4 For a 50 Ω Load
5
Measured with a 1 M Ω Load
6
Measured from the active area to the start of the threads on the housing body. The detector
active area surface is flush with the front of the housing body.
7
Assumes the battery voltage drops below 9.6 V. The reverse protection diode generates a 0.6 V
drop.