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MSP430F663x
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SLAS566 – OCTOBER 2009
Bootstrap Loader (BSL)
The BSL enables users to program the flash memory or RAM using a UART serial interface. Access to the
device memory via the BSL is protected by user-defined password. For complete description of the features of
the BSL and its implementation, see the MSP430 Memory Programming User's Guide, TI literature number
SLAU265
.
Table 6. BSL Functions
BSL FUNCTION
DEVICE OUTPUT SIGNAL
Data transmit
P1.1
Data receive
P1.2
Flash Memory
The flash memory can be programmed via the JTAG port, Spy-Bi-Wire (SBW), the BSL, or in-system by the
CPU. The CPU can perform single-byte, single-word, and long-word writes to the flash memory. Features of the
flash memory include:
•
Flash memory has n segments of main memory and four segments of information memory (A to D) of
128 bytes each. Each segment in main memory is 512 bytes in size.
•
Segments 0 to n may be erased in one step, or each segment may be individually erased.
•
Segments A to D can be erased individually, or as a group with segments 0 to n. Segments A to D are also
called information memory.
•
Segment A can be locked separately.
Enhanced Data Integrity (EDI)
The EDI feature provides additional functionality over the regular MSP430 flash memory controller. The main
purpose of the EDI function is gaining higher reliability of flash content and overall system integrity in harsh
environments and application areas requiring this feature. The additional level of security is reached by
caluclating more dimensional checksums.
The on-chip EDI support software allows easily to use the different EDI features. The implementation cover the
following functionality:
•
Level #0
–
User-defined or auto configuration of memory
–
Error patching of up to four addresses (4 Error Cache entries)
–
Handling of detected errors in an error list stored in RAM or flash
–
Restart on error
•
Level #1:
–
All functionality of level #0 implemenation
–
Recover on error
–
User-defined error handling
For Complete EDI Description, See the MSP430 On-Chip EDI Support Software User's Guide (
SLAUxxx
)
RAM Memory
The RAM memory is made up of n sectors. Each sector can be completely powered down to save leakage,
however all data is lost. Features of the RAM memory include:
•
RAM memory has n sectors. The size of a sector can be found in the Memory Organization section.
•
Each sector 0 to n can be complete disabled, however data retention is lost.
•
Each sector 0 to n automatically enters low power retention mode when possible.
•
For Devices that contain USB memory, the USB memory can be used as normal RAM if USB is not required.
Copyright © 2009, Texas Instruments Incorporated
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