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5
SLLU298 – May 2018
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Copyright © 2018, Texas Instruments Incorporated
ISO5852SDW Driving and Protecting SiC and IGBT Power Modules
Table 1. Electrical Specifications (continued)
PARAMETER
TEST CONDITION
MIN
NOM
MAX
UNIT
SHORT CIRCUIT PROTECTION
VDESAT
Nominal desaturation threshold
Can be
programmed by
resistors down to 4
V
8.3
9.0
9.5
V
TDESATBLN
K
Blanking time
310
400
480
ns
TDS90
Response time to 90% VOUTHL
CLOAD = 10nF
553
760
ns
TDS10
Response time to 10% VOUTHL
CLOAD = 10nF
2
3.5
µs
ICHARGE
Capacitor charge current
0.42
0.5
0.58
mA
IDISCHARGE
Capacitor discharge current
9
14
mA
VCLAMP
Miller clamp threshold
1.6
2.1
2.5
V
ICLAMP
Miller clamp current
4
A
ISOLATION
CMTI
CMTI
100
V/ns
VISO
Withstand isolation voltage
Reinforced, 60s
5.0
kVrms
CI
Barrier capacitance
20
pF
TA
Operating Ambient Temperature
-40
25
125
oC
SIZE
Board size
Without connector
100 x 62 x 6.6
mm