8.5 Current Consumption (CC3220MODSF and CC3220MODASF)
T
A
= 25 °C, V
BAT
= 3.6 V
PARAMETER
MIN
TYP MAX UNIT
MCU ACTIVE
NWP ACTIVE
TX
1 DSSS
TX power level = 0
286
mA
TX power level = 4
202
6 OFDM
TX power level = 0
255
TX power level = 4
192
54 OFDM
TX power level = 0
232
TX power level = 4
174
RX
1 DSSS
74
54 OFDM
74
NWP idle connected
25.2
MCU SLEEP
NWP ACTIVE
TX
1 DSSS
TX power level = 0
282
mA
TX power level = 4
198
6 OFDM
TX power level = 0
251
TX power level = 4
188
54 OFDM
TX power level = 0
228
TX power level = 4
170
RX
1 DSSS
70
54 OFDM
70
NWP idle connected
21.2
MCU LPDS
NWP active
TX
1 DSSS
TX power level = 0
266
mA
TX power level = 4
184
6 OFDM
TX power level = 0
242
TX power level = 4
176
54 OFDM
TX power level = 0
217
TX power level = 4
154
RX
1 DSSS
53
54 OFDM
53
135
µA
NWP idle connected
710
µA
MCU hibernate
NWP hibernate
5
µA
MCU shutdown
NWP shutdown
1
Peak calibration current
V
BAT
= 3.6 V
420
mA
V
BAT
= 3.3 V
450
V
BAT
= 2.3 V
620
(1)
TX power level = 0 implies maximum power (see
). TX power level = 4 implies output power
backed off approximately 4 dB.
(2)
CC3220MODx and CC3220MODAx are constant, power-source systems. The active current numbers scale based on the V
BAT
voltage
supplied.
(3)
The RX current is measured with a 1-Mbps throughput rate.
(4)
DTIM = 1
(5)
The LPDS number of reported is with retention of 256KB of MCU SRAM. The CC3220MODx and CC3220MODAx modules can be
configured to retain 0KB, 64KB, 128KB, 192KB, or 256KB of SRAM in LPDS. Each 64-KB block of MCU retained SRAM increases
LPDS current by 4 μA.
SWRS206E – MARCH 2017 – REVISED MAY 2021
Copyright © 2021 Texas Instruments Incorporated
29
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