Texas Instruments bq2014HEVM-001, Руководство пользователя

Страница: 8 / 28

Pin Descriptions
2-2
2.1 Pin Descriptions
P1 HDQ/Serial communications port
P2 NC/No connect
P3 BAT+/Battery positive/pack positive
P4 NC/No connect
P5 RBI/Register backup input
P6 GND/Ground
P7 PACK–/Pack negative
P8 BAT–/Battery negative
2.2 Programming
The DM2014H circuit module is preconfigured for battery-pack chemistry,
voltage, and pack capacity. The circuit module can be reprogrammed for pack
chemistry, voltage, capacity, and other operating parameters via the
programming resistors on the board. The resistors set the programming pins
to a high (H), low (L), or float (Z) state on initialization. A high (H) state for a
programming pin requires the pullup resistor, a low (L) state requires the
pulldown resistor, and the float (Z) requires no resistors on the programming
pin. The shaded area of the tables indicates the bq2014HEVM-001
configuration. See the bq2014H data sheet for a complete description of how
the bq2014H is programmed.
2.2.1 Full Capacity
Pins 2–5 of the bq2014H determine the full capacity or programmed full count
(PFC) of the DM2014H. Resistors R12–R15 and R17–20 set the pins to a high
(H), low (L), or float (Z) state during board initialization.
Table 2–1. Full Capacity Programming
PFC Input Settings
Pin 4 Pin 5 Sense Resistor m
Ω
Capacity (mAh)
H Z 50 1300
Z Z 50 650
L L 50 2600
2.2.2 Self-Discharge Settings for Chemistry
Battery chemistries have different self-discharge rates. Pin 6 of the bq2014H
determines the self-discharge factors of the DM2014H. Resistors R23 and
R24 set the pin to a high (H), low (L), or float (Z) state during board initialization.