Texas Instruments bq2013HEVM-001, Руководство пользователя, Страница: 9 / 28

Programming
2-3
DM2013H—bq2013H-Based Circuit Module
Table 2–2. Self-Discharge Programming
Self-Discharge Setting
Pin 4 Chemistry
H NiMH
Z NiCd
L Lead–acid
Note: Select the self-discharge setting that most closely models the battery pack to be used.
2.2.3 LED Display Mode
The DM2013H 5 onboard LEDs indicate remaining battery capacity in relative
mode (20% increments of the learned battery capacity). Pin 5 of the bq2013H
determines the LED display mode of the DM2013H. Resistors R19 and R20
set the pin to a high (H), low (L), or float (Z) state during board initialization.
Table 2–3. LED Mode Programming
LED Mode Setting
Pin 5 LED Mode
H Relative (20% increments of learned capacity)
Z Relative (20% increments of learned capacity)
L Absolute (20% increments of programmed capacity)
2.2.4 Charge Efficiency Compensation
The DM2013H is configured to apply no-charge efficiency compensation. Pin
6 of the bq2013H determines the charge efficiency factors of the DM2013H.
Resistors R23 and R24 set the pin to a high (H), low (L), or float (Z) state during
board initialization.
Table 2–4. Charge Efficiency Programming
Self-Discharge Setting
Pin 6 Charge Efficiency
H Lowest Efficiency
Z Highest Efficiency—100% Efficient
L Medium Efficiency
Note: Select the charge efficiency setting that most closely models the battery pack to be used.