Texas Instruments bq2013HEVM-001, Руководство пользователя, Страница: 10 / 28

Programming
2-4
2.2.5 Offset Error Compensation
The DM2013H is configured to apply compensation to correct for –75
µ
V of
offset error. This is the error typically found using the bq2013H on a
well-designed PCB. Pin 7 of the bq2013H determines the offset error
compensation of the DM2013H. Resistors R3 and R8 set the pin to a high (H),
low (L), or float (Z) state during board initialization.
Table 2–5. Charge Efficiency Programming
Self-Discharge Setting
Pin 7 Offset Compensation
H –150
µ
V
Z –75
µ
V
L 0
µ
V
2.2.6 Pack Voltage
The DM2013H is preconfigured for pack voltage (number of cells). R2, R6 and
R7 configure this as shown in the schematic and are set as shown in Table 2–6.
Table 2–6. Pack Voltage Programming
EVM Part Number R2 R18 R19
End-of-Discharge
Level 1
End-of-Discharge
Level 2
bq2013HEVM-001 1.5 M
Ω
1.1 M
Ω
100 K 12 V 10.8 V
2.2.7 Programming Hardware Changes
The following procedure changes the configuration of DM2013H to other (un-
shaded) options listed in the tables above:
1) Ensure that
the
DM2013H is disconnected from the battery.
2) Determine the resistors required to achieve the high (H), low (L), or float
(Z) states on the program pin inputs.
3) Remove the 200k resistors where needed.
4) Place required 200k resistors where needed.
5) If required, change the voltage programming resistors as outlined on the
schematic.
6) Reconnect the DM2013H to the battery pack.
The EV2200 and the PC software can be used to confirm the new settings by
reading the PPU and PPD data registers and the Setup screen.