Tait TB8100, Руководство по обслуживанию

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250 Power Management Unit Disassembly and Reassembly TB8100 Service Manual
© Tait Electronics Limited September 2006
14.1.2 Equipment Safety
Important
This equipment contains devices which are susceptible to
damage from static charges. Refer to
“ESD Precautions”
on page 17 for more information on antistatic procedures
when handling these devices.
Important
Insulated gate FET transistors are susceptible to damage
from static charges, due to their extremely high input resist-
ance. To avoid possible damage to the device during han-
dling, testing or actual operation, we recommend you fol-
low these procedures: avoid unnecessary handling; when
handling the device, pick it up by the cap, not the leads; do
not insert or remove the device while the power is on;
avoid contact with non-conductive plastic or non-conduc-
tive styrofoam.