Electrical characteristics
STM32L151xC STM32L152xC
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DocID022799 Rev 10
Flash memory and data EEPROM
Table 36. Flash memory and data EEPROM characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
(1)
1. Guaranteed by design, not tested in production.
Unit
V
DD
Operating voltage
Read / Write / Erase
-
1.65
-
3.6
V
t
prog
Programming/ erasing
time for byte / word /
double word / half-page
Erasing
-
3.28
3.94
ms
Programming
-
3.28
3.94
I
DD
Average current during
the whole programming /
erase operation
T
A
=
25 °C, V
DD
= 3.6 V
-
600
900
µA
Maximum current (peak)
during the whole
programming / erase
operation
-
1.5
2.5
mA
Table 37. Flash memory and data EEPROM endurance and retention
Symbol
Parameter
Conditions
Value
Unit
Min
(1)
1. Guaranteed by characterization results, not tested in production.
Typ Max
N
Cycling (erase / write)
Program memory
T
A
=
-40°C to
105 °C
10
-
-
kcycles
Cycling (erase / write)
EEPROM data memory
300
-
-
t
RET
(2)
2. Characterization is done according to JEDEC JESD22-A117.
Data retention (program memory) after
10 kcycles at T
A
= 85 °C
T
RET
= +85 °C
30
-
-
years
Data retention (EEPROM data memory)
after 300 kcycles at T
A
= 85 °C
30
-
-
Data retention (program memory) after
10 kcycles at T
A
= 105 °C
T
RET
= +105 °C
10
-
-
Data retention (EEPROM data memory)
after 300 kcycles at T
A
= 105 °C
10
-
-