SanDisk SDIB-4, Руководство по эксплуатации продукта

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FlashDrive Product Manual
FlashDrive Product Manual © 1999 SANDISK CORPORATION 27
4.3 Electrical Specification
The following table defines all D.C.
Characteristics for the FlashDrive.
Unless otherwise stated, conditions are:
SDIB SDIBI
SD25B SD25BI
SD35B SD35BI
Vcc = 5V ± 10% Vcc = 5V ± 5%
Vcc = 3.3V ± 5% Vcc = 3.3V ± 5%
Ta = 0°C to 60°C Ta = -40˚C to 85˚C
4.3.1 Absolute Maximum Conditions
Parameter Symbol Conditions
Input Power Vcc -0.3V min. to 7.0V max.
Voltage on any pin except Vcc with respect to GND. V -0.5V min. to Vcc + 0.5V max.
4.3.2 Input Leakage Current
Note: In the table below, x refers to the characteristics described in section 4.3.3. For example, I1U indicates a
pull up resistor with a type 1 input characteristic.
Type Parameter Symbol Conditions M I N TYP MAX Units
IxZ Input Leakage Current IL Vih = Vcc / Vil = Gnd -1 1 µA
IxU Pull Up Resistor RPU1 Vcc = 5.0V 50k 500k Ohm
IxD Pull Down Resistor RPD1 Vcc = 5.0V 50k 500k Ohm
4.3.3 Input Characteristics
Type Parameter Symbol M I N TYP MAX M I N TYP MAX Units
VCC = 3.3 V VCC = 5.0 V
1 Input Voltage
CMOS
Vih
Vil
2.4
0.6
2.4
0.8
Volts
2 Input Voltage
CMOS
Vih
Vil
1.5
0.6
2.0
0.8
Volts
3 Input Voltage
CMOS
Schmitt Trigger
Vth
Vtl
1.8
1.0 2.8
2.0
Volts