Samsung Electronics
6-11
6-1-3 System Memory
System memory consists of 512KB flash memory,
2MB DRAM, and 32KB SRAM. Flash memory,
DRAM and SRAM are selected by each CHIP
SELECT (/ROMCS, /RAS0, /RAS1, /LCAS, /UCAS,
/RAMCS), and data is accessed half word (16bits) by
half word and one byte (8bits) by one byte.
DRAM is designed to be able to add 2MB to the basic
2MB so that buyers can make their options.
In addition, the backup circuit built in for DRAM
keeps data in user memory during at least
30-miniute power failure. Super capacitor
(1F) is used as a backup element. SRAM holds
telephone numbers and journal information and can
keep minimum information using backup battery
( L i t h i u m ) .
6-1-4. Scanner
6-1-4-1. SUMMARY
This sheet-fed type device to read manuscripts has
300dpi CIS as an image sensor. The design is focused
on 30-sheet ADF and 3-second quick scan functions.
6-1-4-2. SCAN RESOLUTION
– Normal(Quick) : 1/3.85mm, 1/8mm (98
×
2 0 3 d p i )
– Fine
: minor scanning 1/7/7mm, main
scanning 1/8mm (196
×
2 0 3 d p i )
– Super Fine
: minor scanning 1/300inch, main
scanning 1/300inch(300
×
3 0 0 0 d p i )
6-1-4-3. CIS : Contact Image Sensor improves
p roductivity and is designed to be replaced easily.
Color models have color CIS.
➀
SF-4500/Msys4700/MJ-4500 : BN-30216D, 10Pin
C o n n e c t o r
– Minimum Scan Line Time: 1.8mS
– Light Source Power : 12V
– Maximum Pixel frequency : 2MHz
– Effective Sensor Element : 2552
– Clamp Level : 1.2 - 1.6V
– Bright Output : MIN 0.8V
➁
SF-4500C/Msys4800/MJ-4500C : CXB-30216G, 12
Pin Connector
– Minimum Scan Line Time for one color : 1.5mS
– Color Separation : RGB LED transfer mode
– Light Source Power : 12V
– Maximum Pixel frequency : 2MHz
– Effective Sensor Element : 2552
– Clamp Level : 1.2 - 1.6V
– Bright Output : MIN 0.8V
Fig.6-1-11 CIP1A Block Diagram
S C A N I P
C I S
CIS Control
Содержание SF4500
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