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TO-247N(-4L) Half-Bridge Evaluation Board

User’s Guide

No. 63UG0

60E

Rev.001

2022.2

References:

*1 “Gate-source voltage behavior in a bridge configuration”

Application Note (No. 60AN135ERev.002)

ROHM Co., Ltd., May 2018

https://fscdn.rohm.com/en/products/databook/applinote/discrete/sic/mosfet/sic-mosfet_gate-

source_voltage_an-e.pdf

*2 “Gate-Source Voltage Surge Suppression Methods”

Application Note (No. 62AN010ERev.002)

ROHM Co., Ltd., May 2019

https://fscdn.rohm.com/en/products/databook/applinote/discrete/sic/mosfet/sicmosfet-

surge%20suppression_an-e.pdf

*3 “Snubber Circuit Design Methods”

Application Note (No. 62AN0036JRev.001)

ROHM Co., Ltd., June 2019

https://fscdn.rohm.com/en/products/databook/applinote/discrete/sic/mosfet/sic-

mos_snubber_circuit_design_an-e.pdf

*4 “Improvement of Switching Loss by Driver Source Pin”

Application Note (No. 62AN0039JRev.001)

ROHM Co., Ltd., August 2019

https://fscdn.rohm.com/en/products/databook/applinote/discrete/sic/mosfet/sicmosfet_swloss_an-e.pdf

*5 Nippon Automatic Control Co., Ltd. website

https://naccjp.com/nacc/lp/cwt/

*6 T&M Research Products, Inc. website

https://www.tandmresearch.com/index.php?mact=ListIt2Products,cntnt01,detail,0&cntnt01item=series-sdn-

414&cntnt01template_summary=Side&cntnt01returnid=19

*7 “How to Select the Right Current Probe”

Application Note (No. 5992-2656EN)

KEYSIGHT TECHNOLOGIES, September 2018

Содержание TO-247N

Страница 1: ...4th Generation SiC MOSFET Half Bridge Evaluation Board User s Manual...

Страница 2: ...in serious or life threatening injury Never touch the board with bare hands or bring it too close to your hand Also be careful when working with conductive instruments such as tweezers or screwdriver...

Страница 3: ...kage and TO 247 4L For detailed information on product specifications please refer to 4th generation SiC MOSFET Evaluation Board Product Specifications 1 Introduction Since this board has multiple vol...

Страница 4: ...SCT4018KR as a default setting surely other devices in TO 247N or TO 247 4L packages can also be mounted and evaluated In this case change the gate drive circuit constants according to the characteris...

Страница 5: ...equipped with a number of LEDs to make it easy to monitor the board s operating status The approximate locations of the LEDs are shown in Figure 2 and their details are shown in Table 2 a PCB004P for...

Страница 6: ...ng connector Figure 3 Connector pin assignment Top view Silkscreen notation LED LED lighting Details HV alive Red Lit The LED lights up when there is a voltage of 20 V or more in the high voltage powe...

Страница 7: ...at H level When open it is pulled down with a 2 2 k resistor 02 SGND Input signal side GND Completely separated from the DUT side GND CN101 01 IN_L_CLK I Signal to turn on off the L side MOSFET Turns...

Страница 8: ...e adjusted by the variable resistors RV51 and RV151 Rotating the variable resistors clockwise increases the output voltage 4 2 How to adjust the negative bias VEE2 The negative bias VEE2 which is the...

Страница 9: ...8 27 TO 247N 4L Half Bridge Evaluation Board User s Guide 2022 ROHM Co Ltd No 63UG060E Rev 001 2022 2 Figure 5 Gate drive power supply circuit HS side VCC2 SOURCE VEE GND2...

Страница 10: ...he output signal of the ROHM MOSFET driver IC BM61M41RFV C directly drives the MOSFET via the gate resistor Since the pattern inductance of the driver circuit affects the surge voltage characteristics...

Страница 11: ...mounted in reverse If the anode is connected to the OUT pin of the driver IC U2 the turn on speed can be increased so it can be used in different ways depending on the characteristics of the device us...

Страница 12: ...easure the current at the drain pin and the L side can measure the current at the power source side Figure 9 shows the appearance of the probe related connections during measurement and the enlarged p...

Страница 13: ...6 shows a comparison of the characteristics of a general Rogowski type current probe and a coaxial type shunt resistor While the Rogowski type has a measurement bandwidth of several tens of MHz the co...

Страница 14: ...consumption of the device itself reaches several tens of Watts To install a heat sink the device must be mounted on the solder side The DUT is laid out on the same side so that the commutation device...

Страница 15: ...User s Guide 2022 ROHM Co Ltd No 63UG060E Rev 001 2022 2 Figure 14 Measurement view of heat sink installation Figure 15 Efficiency SCT4036KR BUCK Rg 3 3 DUT Mounted on the solder side Inductor Heat Si...

Страница 16: ...lied voltage V L Inductor value H TDP_TTL Total time of double pulse signal s Normally the double pulse signal is a single shot but when it is applied periodically it is necessary to ensure sufficient...

Страница 17: ...r and connecting the external CLK signal to the IN_L_CLK pin CN101 pin 1 the procedure is the same as for the H side Pulse Generator 5V output PGND HVdc DUT_HS DUT_LS HS GADJ LS GADJ IN_H_CLK IN_L_CLK...

Страница 18: ...the CLK signal Turn on the HVdc power supply Adjust the output current with an electronic load device In CCM mode where the inductor current is continuous the output voltage will be approximately as f...

Страница 19: ...high voltage HVdc power supply When the AC output is on the side the H side switches and when it is on the side the L side switches and by controlling the duty cycle of the CLK signal a sinusoidal vo...

Страница 20: ...e pulse generator and input the CLK signal Turn on the HVdc power supply Adjust the output current with an electronic load device In CCM mode where the inductor current is continuous the output voltag...

Страница 21: ...circuit diagram and an example of its mounting a Circuit diagram b Mounting example PCB005P H side Figure 21 RCD non discharge snubber circuit Q51 Q151 PGND SCT4090KRKR 1200V 90m SCT4090KR 1200V 90m 3...

Страница 22: ...SFET On the other hand the capacitance CSNB of the snubber capacitor is calculated from the energy stored in the inductance by the following equation Where VHVdc is the high voltage power supply and V...

Страница 23: ...Negative surge suppression D54 C64 D154 C164 During turn off operation of the MOSFET in bridge configuration a negative surge occurs in VGS of the non switching side MOSFET which may exceed the maxim...

Страница 24: ...g the pattern line length between the MC pin and the MOSFET II Negative surge clamp circuit I Positive surge clamp circuit IV Additional capacitance between GS CGS Figure 24 shows an example of a prot...

Страница 25: ...s VGS on the L side the third is VDS on the H side and the bottom waveform is ID on the H side The gate source pin surge is positive on the H side during turn on and negative on the HS and L sides dur...

Страница 26: ...up When voltage is applied to the HVdc PGND pins check that LED301 red is lit If the LED does not light up check the applied voltage source and wiring The LED lights up when the input output voltage...

Страница 27: ...cuit Design Methods Application Note No 62AN0036JRev 001 ROHM Co Ltd June 2019 https fscdn rohm com en products databook applinote discrete sic mosfet sic mos_snubber_circuit_design_an e pdf 4 Improve...

Страница 28: ...ch technical information The Products specified in this document are not designed to be radiation tolerant For use of our Products in applications requiring a high degree of reliability as exemplified...

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