Rohm BM60052FV-C, Руководство пользователя

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Datasheet Datasheet
2/9
BM60052FV-EVK-001
© 2016 ROHM Co., Ltd. All rights reserved.
2016.3.4 Rev.002
www.rohm.co.jp
2-1. Performance specifications
(
Ta
=25°C. These are typical values and do not guarantee the characteristics of the
evaluation board.)
Characteristic item Standard/Rating Remarks
Power voltage
12 VDC ~ 28 VDC (15 V typ., 24 V typ.) between Pin1
and Pin2
Power current
0.8 A (power voltage 15 VDC)
0.5 A (power voltage 24 VDC)
* 1
Number of drive circuits 2
Range of input signal frequency DC ~ 100 kHz
Minimum input ON pulse width 1.0 µs * 6
Minimum input OFF pulse width 1.0 µs
Input signal 5V 0-P
Maximum gate drive charge 1500 nC * 1, * 2
Output forward bias voltage (+
Vg
) +17 V ~ +19 V * 1
Output reverse bias voltage (-
Vg)
-3 V ~ -5 V * 1
Gate forward direction bias current (+
Ig
) +7.5 A max (
Prw
≤ 0.5 µs) * 1, * 2
Gate drawing current (-
Ig
) -8.5 A max (
Pfw
≤ 0.5 µs) * 1, * 2
Rise response delay time (+
Tstg
) 100 ns typ. * 1, * 3
Fall response delay time (-
Tstg
) 100 ns typ. * 1, * 4
Rise time (
Tr
) 100 ns typ. * 1, * 5
Fall time (
Tf
) 100 ns typ. * 1, * 5
Withstand voltage For one minute at AC 2500 V (between input and output)
Repeatedly peak voltage
1200V voltage betweenTH7 and TH8, voltage between
TH8 and TH8
Insulation resistance 100 m Ω or more at DC 500 V (between input and output)
DESAT detection voltage 4.0 V (min)
Operating temperature range -40 ~ +70ºC
Storage temperature range -40 ~ +80ºC
Operating humidity range 30% to 90% RH (No dew-condensation)
* 1
Vin
: 15 V, 24 V; Load: Dummy load equivalent to BSM300D12P2E001, i.e., 1.6 Ω + 0.083 µf;
f
: 100 kHz and Duty
cycle: 50%
* 2 A gate resistance (
RG
) of 0.2 Ω is inserted in the circuit for SiC-MOSFET gate driver as shown in the following
figure.
SiC-MOSFET
Vg
G
S
ゲートドライバー
RG= 0.2 Ω
RG= 0.2 Ω
Gate driver