30
6. TECHNICAL SPECIFICATIONS
RN-1600
RN-2160
RN-4110
RN-460-200
MOS-FET Amplifier
1-Channel (Mono)
2-Channel
4-
Channel
5-
Channel
Rated power output
(*THD/14.4 V)
195 Wrms x 1 @ 4 Ω (<0.1 %*)
205 W x 1 @ 4 Ω (<1.0 %*)
300 Wrms x 1 @ 2 Ω (<0.1 %*)
350 W x 1 @ 2 Ω (<1.0 %*)
500 W x 1 @ 1 Ω (<1.0 %*)
145 Wrms x 2 @ 4 Ω (<0.1 %*)
155 W x 2 @ 4 Ω (<1.0 %*)
480 W x 1 @ 4 Ω (<1.0 %*)
240 W x 2 @ 2 Ω (<1.0 %*)
100 Wrms x 4 @ 4 Ω (<0.1 %*)
105 W x 4 @ 4 Ω (<1.0 %*)
300 W x 2 @ 4 Ω (<1.0 %*)
150 W x 4 @ 2 Ω (<1.0 %*)
65 Wrms x 4 + 180 Wrms x 1 @ 4 Ω (<0.1 %*)
70 W
x 4 + 195 W x 1 @ 4 Ω (<1.0 %*)
70 Wrms x 4 + 290 Wrms x 1 @ 2 Ω (<0.1 %*)
85 W x 4 + 310 W x 1 @ 2 Ω (<1.0 %*)
BJT amplification
circuitry with MOS-FET
•
•
•
•
Variable lowpass
crossover
(12 dB/oct.)
30 – 250 Hz
10/30 – 150 Hz
10/30 – 150 Hz
30/50 – 150 Hz
Variable subsonic filter
10 Hz – 40 Hz
n.a.
n.a.
n.a.
Variable input sensitivity
0.2 – 6 V
0.2 – 6 V
0.2 – 6 V
0.2 – 6 V
Damping factor @ 4 ohms
> 200
> 200
> 200
> 200
Signal to noise ratio
> 85 dB
> 85 dB
> 85 dB
> 85 dB
20 mm² direct input
power terminals
•
•
•
•
Bass level remote control
•
•
•
•
Dimensions
(W x H x D)
363 x 56 x 226 mm
363 x 56 x 226 mm
395 x 56 x 226 mm
435 x 56 x 226 mm
NC-Amp 1-2-4-5-CH ME_pfade.indd 30
09.05.2009 11:25:34 Uhr