RT8509A
5
DS8509A-00 November 2013
www.richtek.com
©
Copyright 2013 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.
Parameter Symbol Test
Conditions Min
Typ
Max
Unit
Transconductance gm
I = ±2.5
μ
A at V
COMP
= 1V
-- 100 --
A/V
Voltage Gain
A
V
FB to COMP
--
700
--
V/V
N-MOSFET
Current Limit
I
LIM
4.5
5
--
A
On-Resistance
R
DS(ON)
--
100
250
m
Leakage Current
I
LEAK
V
LX
= 24V
-- 30 45
A
Current Sense
Transresistance
R
CS
--
0.25
--
V/A
Soft-Start
Charge Current
--
5
--
A
Control Inputs
Logic-High
V
IH
1.5
--
--
EN Input
Voltage
Logic-Low
V
IL
--
--
0.5
V
Note 1.
Stresses beyond those listed
“
Absolute Maximum Ratings
”
may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2.
θ
JA
is measured at T
A
= 25
°
C on a high effective thermal conductivity four-layer test board per JEDEC 51-7.
θ
JC
is
measured at the exposed pad of the package.
Note 3.
Devices are ESD sensitive. Handling precaution is recommended.
Note 4.
The device is not guaranteed to function outside its operating conditions.
